• 한국재료학회지
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• 제27권1호
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• pp.8-11
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• 2017

Binary Ti-Al alloys containing 50 to 60 atomic percent aluminum are rapidly solidified by hammer anvil method under an argon atmosphere. Constituent phases in each alloy are identified by X-ray diffractometry and microstructures of the alloys are investigated using a transmission electron microscope. In alloys with aluminum content between 50 and 54 percent, a second phase exists besides TiAl(${\gamma}$); this second phase is identified as $Ti_3Al$(${\alpha}2$). The ${\alpha}2$ phase is observed in two types of morphology. One is as fine lamellar alternating with ${\gamma}$ and the other is as a particle. It is concluded that the existence of a metastable phase with the morphologies stated above should arise from a higher quenching rate attained by the hammer anvil method as compared to the conventional roll or splat-quench method. Implications of the above observation are discussed with respect to the phase relations in the Ti-Al binary system; these implications are still controversial in many respects.

• Korean Chemical Engineering Research
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• 제46권4호
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• pp.806-812
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• 2008

귀금속촉매 존재하에서 암모니아 전환반응은 배가스내의 암모니아를 처리하는데 중요한 기술이다. 과잉용액 함침법을 이용하여 $Pt-Rh/Al_2O_3$, $Pt-Rh/TiO_2$, $Pt-Rh/ZrO_2$, $Pt-Pd/Al_2O_3$, $Pd-Rh/Al_2O_3$, $Pd-Rh/TiO_2$, $Pd-Rh/ZrO_2$, $Pt-Pd-Rh/Al_2O_3$, $Pd/Ga-Al_2O_3$, $Rh/Ga-Al_2O_3$, 그리고 $Ru/Ga-Al_2O_3$의 촉매를 제조하였다. 제조된 촉매는 1/4"의 반응기에 $10,000{\sim}50,000hr^{-1}$의 공간속도 조건하에서 촉매활성능 실험을 수행하였다. 암모니아의 초기농도는 2,000 ppm (나머지는 공기)으로 유지하였다. $T_{50}$는 암모니아 전환율이 50%일 때를 나타내는 온도를, $T_{90}$은 90%의 전환율일 때의 온도를 나타낸다. 알루미나를 담지체로 사용했을때의 $T_{50}$와 $T_{90}$은 다른 담체를 사용했을때의 $T_{50}$와 $T_{90}$보다 훨씬 낮았다. Pd-Rh촉매의 경우 $Al_2O_3$를 담체로 사용하였을 때 $ZrO_2$나 $TiO_2$보다 저온 활성이 우수하게 나타났다. 황산화물의 피독실험 결과 본 연구에서는 최종적으로 $Pt-Rh/Al_2O_3$ 촉매가 다른 촉매에 비하여 우수함을 보였다. 실험결과 Pt-Rh가 암모니아 전환공정에서 유용한 촉매라는 사실을 알 수 있다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.114-114
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• 1992

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.402-405
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_{x})TiO_{3}$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their stuctural and dielectric properties were investigated with variation of composition ratio and an amount of $Al_{2}O_{3}$ (0.5, 1.0, 1.5. 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an $Al_{2}O_{3}$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of $Al_{2}O_{3}$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% $Al_{2}O_{3}$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% $Al_{2}O_{3}$ content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.402-405
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• 2001

(Ba$\_$0.6-x/Sr$\_$0.4/Ca$\_$x/)TiO$_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and an amount of Al$_2$O$_3$(0.5, 1.0, 1.5, 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an Al$_2$O$_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of Al$_2$O$_3$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% Al$_2$O$_3$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% Al$_2$O$_3$ content.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.155-161
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• 1999

The tribological behaviour of monolithic SiC as well as SiC-TiC and SiC-TiC-$TiB_2$ particulate composite materials has been investigated in unlubricated oscillating sliding tests against $Al_2O_3$ at temperature in the range from room temperature up to $600^{\circ}C$. At temperatures below $600^{\circ}C$ the wear rate of the systems with the composite materials was up to 20 times lower than the wear of the $Al_2O_3$/SiC system and was dominated by the oxidation of the titanium phases. At $600^{\circ}C$ the oxidation rate of the TiC and -TEX>$TiB_2$ grains becomes predominant resulting in an enhanced wear rate of the composite rate of the TiC and TiB2 grains becomes predominant resulting in an enhanced wear rate of the composite materials. The coefficient of friction shows similar values for all materials of investigation, increasing from 0.25…0.3 at room temperature to 0.7…0.8 $600^{\circ}C$. The wear of the $Al_2O_3$/SiC system is mainly abrasive at temperatures above room temperature and is characterised by an enhanced wear of the alumina ball at $600^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.366.2-366.2
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• 2014

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

• 한국세라믹학회지
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• 제29권3호
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• pp.223-231
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• 1992

CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.

• 한국세라믹학회지
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• 제27권7호
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• pp.916-924
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• 1990

The preparatin of the fine TiN powders by reduction-nitridation of TiCl3-Al-N2 system was attempted in the temperature range from 350$^{\circ}$to 100$0^{\circ}C$. The formation mechanism and kinetics of TiN were examined, and the resultant TiN powder was characterized by means of XRD, PSA and SEM-EPMA methods. TiN was formed at temperatrue higher than $600^{\circ}C$. As an intermediate phase, AlTi was obtained. The apparent activation energy for the formation of TiN was approximately 4.2kcal/mole(600$^{\circ}$~90$0^{\circ}C$). The crystallite size and lattice constnat of TiN powder obtained in the temperature range from 600$^{\circ}$to 100$0^{\circ}C$ for 2h at the Al/TiCl3 molar ratio of 1.0 were 160~255A and 4.231~4.239A, respectively. According to PSA measurement, the mean particle size ranged from 14.0 to 14.8${\mu}{\textrm}{m}$.

• 한국세라믹학회지
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• 제46권5호
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• pp.467-471
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• 2009

Effects of boron and carbon on the densification and thermal decomposition of an AlN-SiC-$TiB_2$ system were investigated. $SiO_2$ was mostly removed by the addition of carbon, while $Al_2O_3$ formed $Al_4O_4C$ and promoted the densification of the systems above $1850^{\circ}C$. Rather porous specimens were obtained without the additives after hot pressing at $2100^{\circ}C$, while densification was mostly completed at $2000^{\circ}C$ by using the additives. The sintering temperature decreased further to $1950^{\circ}C$ by applying spark plasma sintering. The additives promoted the shrinkage of AlN by forming a liquid phase which was originated from the carbo- and boro-thermal reduction of $Al_2O_3$ and AlN.