• Korean Journal of Materials Research
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• v.14 no.2
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• pp.110-114
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• 2004

High velocity oxy-fuel sprayed NiCoCrAlY coatings were oxidized between 1000 and $1200^{\circ}C$ in air, and the oxide scales were examined by XRD, SEM/EDS, and EPMA. The unoxidized coatings consisted mainly of ${\gamma}$'$-Ni_3$Al, with some ${\gamma}$-Ni. The major oxide formed on the coatings was $\alpha$ $-Al_2$$O_3$. Additionally, (CoCr$_2$$O_4$, $CoAl_2$$O_4$) spinels and $Al_{5}$ $Y_3$$O_{12}$ coexisted. NiO was not found, despite of high amount of Ni in the coating. Below the oxide layer, internally formed $Al_2$$O_3$ existed.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.291-296
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• 2007

Porous $Al_2O_3-(m-ZrO_2)$ composites were fabricated by pressureless sintering, using different volume percentages (40% - 60%) of poly methyl methacrylate (PMMA) powders as a pore-forming agent. The pore-forming agent was successfully removed, and the pore size and shape were well-controlled during the burn-out and sintering processes. The average pore size in the porous $Al_2O_3-(m-ZrO_2)$ bodies was about $200\;{\mu}m$ in diameter. The values of relative density, bending strength, hardness, and elastic modulus decreased as the PMMA content increased; i.e., in the porous body (sintered at $1500^{\circ}C$) using 55 vol % PMMA, their values were about 50.8%, 29.8 MPa, 266.4 Hv, and 6.4 GPa, respectively. To make the $Al_2O_3-(m-ZrO_2)$/polymer hybrid composites, a bioactive polymer, such as PMMA, was infiltrated into the porous $Al_2O_3-(m-ZrO_2)$ composites. After infiltration, most of the pores in the porous $Al_2O_3-(m-ZrO_2)$ composites, which were made using 60 vol % PMMA additions, were infiltrated with PMMA, and their values of relative density, bending strength, hardness, and elastic modulus remarkably increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.176-176
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• 2009

Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1147-1161
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• 1995

When ceramic membrance was made from metal salt solution in place of metal akoxide solution, crack free and good adhesion to supporter was optimized for sol stability and good adhesion force. A starting sol was prepared from aluminum oxychloride aqueous solutjion in order to inhibit the grain growthof Al2O3 during heat treatment. The crack free dip coating can't be achieved in 1mol/ι zirconium oxychloride solution because of the high viscosity which interferes with the hydration copolymerization between Al3+ ion and Zr4+ ion. Thus Al2O3-ZrO2 sol stability and viscosity for dip coating was effective when 0.01 mol/ι zirconium oxychloride was added. The minimizing of crack and achieving better adhesion to the supporter wa obtained by microwave drying, surfactant addition and ultrasonic dip coating in wet atmosphere. The result seems to minimize the capillary force and improve the adhesive ability to supporter during the process. Where the average pore size of Al2O3-ZrO2 ultrafilter ceramic membrane measured 17 Å by the BET method and observed γ-Al2O3 phase with tetragonal zirconia after firing at 700℃.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• Clean Technology
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• v.18 no.1
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• pp.83-88
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• 2012

In order to improve the stability of ${\gamma}-Al_2O_3$ on hydrolysis of $SF_6$, the catalytic promoters were investigated in this study. The crystal phase of ${\gamma}-Al_2O_3$ is transformed to their ${\alpha}$-phase during hydrolysis of $SF_6$. Various metal oxides were applied as the promoter material that is Ga, Mg, and Zn and the promoter of 1, 5, and 10 wt% was impregnated over ${\gamma}-Al_2O_3$ by the impregnation method. Specially, it were confirmed in the catalytic activity tests and XRD analysis that ZnO/${\gamma}-Al_2O_3$ catalyst had the high activity for decomposition of $SF_6$ by catalytic hydrolysis and the crystal phase of ZnO promoted ${\gamma}-Al_2O_3$ was not transformed. From these results, it could be known that the stability of ${\gamma}-Al_2O_3$ is enhanced with the catalytic promotion of ZnO impregnated over the surface of catalyst.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.314-319
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• 2000

Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{\circ}C$ and finished at 110$0^{\circ}C$, reaching a maximum shrinkage rate at 80$0^{\circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${\mu}{\textrm}{m}$. ZnO grain size changed little up to 110$0^{\circ}C$, but increased markedly above 115$0^{\circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${\mu}{\textrm}{m}$ of ZnO grain size.

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.225-230
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• 1988

The strength and thermal shock resistance of $Al_2O_3-ZrO_2$ composites have been studied. The tetragonal $ZrO_2$ powder containing 1 mol.% $Y_2O_3$ and monoclinic $ZrO_2$ powder were prepared by coprecipitation method and subsequently mixed with $Al_2O_3$ powder and granulated by sieving. Duplex composites were prepared by dry mixing matrix agglomerate with 15 to 30 vol.% of dispersion agglomerate, followed by pressing and sintering at 1$600^{\circ}C$ for1 hr. These $Al_2O_3-ZrO_2$ 2 composites having heterogeneous structure showed improved thermal shock behaviors because of the microcracking and pores in dispersed granules, and compressive stresses around dispersed granules resulting from $ZrO_2$ transformation.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.552-560
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• 1994

A composite of TiB2-Al2O3 system was successfully prepared from a mixture of TiO2, B2O3, and Al by self-propagating high temperature synthesis (SHS) with a novel characteristic, utilizing the internal oxidation heat of aluminium metal of the mixture, instead of by a conventional technique, externally heating a mixture of Ti, B and Al2O3. From a mixture with B/Ti molar ratio of =2.0, pure two phases of TiB2 and $\alpha$-Al2O3 with good crystallinity and small, uniform sizes were formed. However, when the B/Ti molar ratio of the mixture goes to a value less than 2.0, in addition to the above main minerals, a small smounts of metastable phases such as TiB and Ti3B4 were formed. It was found that about 60%, the optimum green density of compacts gave their highest reaction rate and temperature during SHS process. TiB2-Al2O3 system composite with B/Ti molar ratio of =2.0 could be pressurelessly sintered even at 190$0^{\circ}C$ under Ar gas flows without any addition of sintering aids, showing their good properties such as 91.2% in relative density, 2750 kgf/$\textrm{mm}^2$ in Vickers hardness and 2620 kgf/$\textrm{cm}^2$ in flexural strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.275-277
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• 2003

최근 logic 소자의 gate oxide로 기존의 $SiO_2$, SiON보다 고유전, 작은 누설전류를 가지는 물질의 개발이 중요한 이슈가 되고 있다. 본 실험실에서는 Si 기판위에 $HfO_2$를 바로 증착하는 경우, 기판의 Si이 박막내로 확산하여 유전율이 저하되는 문제점을 인식하고, 기판과 $HfO_2$ 사이에 $AlO_x$를 방지막으로 사용하였다. 이 때, $AlO_x$의 Al precursor는 TMA로 고정하고, 산화제로는 $H_2O$, $O_2$-plasma, $O_3$를 각각 사용하였다. 모든 $AlO_x/\;HfO_y$ 박막에서 매우 우수한 누설전류특성을 얻을 수 있었는데, 특히 $O_3$를 산화제로 사용한 $AlO_x$방지막의 경우 가장 우수한 특성을 보였다. 또한 질소 분위기에서 $800^{\circ}C$ 10분간 열처리한 후, 방지막을 사용한 모든 경우에서 보다 향상된 열적 안정성을 관찰할 수 있었다.