• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.49-54
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• 1983

The main object of this study is to investigate the effect of Al powder as an additive on the sintering of calcined alumina comparing with that of calcined alumina alone. The degree of Al oxidation is calculated by measuring the weight increase during the firing Water absorption bulk density and compressive strength of the $Al_2O_3+Al$ system at each temperature are compared with those of $Al_2O_4$ alone. The $Al_2O_3+Al$ system shows better physical propeties than Al2O3 alone and it seems by the SEM observation that the fine oxidized Al particles(fine $Al_2O_3$ particles submicron unit) fill the interstices of the original $Al_2O_3$ par-ticles and thus result in the well-close-packed arrangement of the particles.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.288-294
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• 2009

The platelet AlO(OH) nano colloids were prepared by hydrothermal reaction of the $\gamma-Al_2O_3$ obtained with dehydration of $\gamma$-AlO(OH) and dilute $CH_3COOH$ solution. In hydrothermal reaction process, reversible reaction was accompanied between $\gamma-Al_2O_3$ and AlO(OH), and hydrothermal reaction temperature, hydrothermal reaction time and $CH_3COOH$ concentration had an effect on the crystal structure, surface chemical property, surface area, pore characteristics and crystal morphology of the AlO(OH) nano colloid particles. In this study, it was investigated to the hydrothermal reaction condition of the AlO(OH) nano colloid for using catalyst support, heat resisting agent, adsorbents, binder, polishing agent and coating agent. The crystal structure, surface area, pore volume and pore size of the platelet AlO(OH) nano colloids were investigated by XRD, TEM, TG/DTA, FT-IR and $N_2$ BET method in liquid nitrogen temperature.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.4
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• pp.425-431
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• 2007

[ $Al_2O_3/SiC$ ]composite ceramics were sintered to evaluate the bending strength and elastic wave characteristics. The three-point bending test was carried out under room temperature. The elastic wave was detected by fracture wave detector. The crack healing behavior was investigated from 1373 K to 1723 K. The bending strength of $Al_2O_3/SiC$ composite by nanocomposite is higher than that of $Al_2O_3$ monolithic. Crack-healing behavior depended on an amount of additive powder $Y_2O_3$. In $Al_2O_3/SiC$ composite ceramics with 3 wt. % $Y_2O_3$ for additive powder, the bending strength at 1573 K is about 100% increase than that of the smooth specimens. From the result of wavelet analysis of elastic wave signal, the smooth specimen and heat treated specimen of $Al_2O_3$ monolithic and $Al_2O_3/SiC$ composite ceramics showed characteristics of frequency about 58 kHz. The strength of $Al_2O_3/SiC$ composite ceramics was a little higher than those of $Al_2O_3$ monolithic. The dominant frequencies were high with increasing of $Y_2O_3$ for additive powder. The dominant frequencies had direct connection with the bending strength.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.397-404
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• 2009

Effects of ceramic filler types and dose on the low temperature sintering and dielectric properties of ceramic/$CaO-Al_2O_3-SiO_2$ (CAS) glass composites were investigated. All of the specimens were sintered at $850{\sim}900^{\circ}C$ for 2 h, which conditions are required by the low-temperature co-firing ceramic (LTCC) technology. Ceramic fillers of $CaCO_3$, $Al_2O_3$, $CaCO_3-Al_2O_3$ mixture, and $CaCO_3-Al_2O_3$ compound ($CaAl_2O_4$), respectively, were used. The addition of $Al_2O_3$ yielded the crystalline phase of alumina, which was associated with the inhibition of sintering, while, $CaCO_3$ resulted in no apparent crystalline phase but the swelling was significant. The additions of $CaCO_3-Al_2O_3$ mixture and $CaAl_2O_4$, respectively, yielded the crystalline phases of alumina and anorthite, and the sintering properties of both composites increased with the increase of filler addition and the sintering temperature. In addition, the $CaAl_2O_4$/CAS glass composite, sintered at $900^{\circ}C$, demonstrated good microwave dielectric properties. In overall, all the investigated fillers of 10 wt% addition, except $CaCO_3$, yielded reasonable sintering (relative density, over 93 %) and low dielectric constant (less than 5.5), demonstrating the feasibility of the investigated composites for the application of the LTCC substrate materials.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.392-398
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• 2014

$Al_2O_3$-SiC composites reinforced with SiC whisker ($SiC_w$) were fabricated using three different methods. In the first, $Al_2O_3-SiC_w$ starting materials were used. In the second, $Al_2O_3-SiC_w$-SiC particles ($SiC_p$) were used, which was intended to enhance the mechanical properties by $SiC_p$ reinforcement. In the third method, reaction-sintering was used with mullite-Al-C-$SiC_w$ starting materials. After hot-pressing at $1750^{\circ}C$ and 30 MPa for 1 h, the composites fabricated using $Al_2O_3-SiC_w$ and $Al_2O_3-SiC_w-SiC_p$ showed strong mechanical properties, by which the effects of reinforcement by $SiC_w$ and $SiC_p$ were confirmed. On the other hand, the mechanical properties of the composite fabricated by reaction-sintering were found to be inferior to those of the other $Al_2O_3$-SiC composites owing to its relatively lower density and the presence of ${\gamma}-Al_2O_3$ and ${\gamma}-Al_{2.67}O_4$. The greatest hardness and $K_{1C}$ were 20.37 GPa for the composite fabricated using $Al_2O_3-SiC_w$, and $4.9MPa{\cdot}m^{1/2}$ using $Al_2O_3-SiC_w-SiC_p$, respectively, which were much improved over those from the monolithic $Al_2O_3$.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.405-410
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• 1996

The partial substitution of LiTaO3 with Al2O3 caused the variation of dielectric properties and a lower melting temperature yielding an easier growth of single crystal. The lattice constants and Raman band broadening were measured for the LiTaO3 solid solution in which the cations of Li+ and Ta5+ were partially substituted by Al3+ cation. The LiTaO3 type limit phases were obtained. ; Li1.15Al0.45Ta0.7O3 for cationic excess Li1.15Al0.45Ta0.7O3 for stoichiometry Li0.85Al0.05TaO3 for cationic deficit. The second phase was formed beyond the solubility limit. The limit phase (Li0.85Al0.05TaO3) in the region of cationic deficit showed the lowest Cuire temperature of 61$0^{\circ}C$ and melting point of 152$0^{\circ}C$ compared to the solid solutions in other regions (TMp=1$650^{\circ}C$, Tc=69$0^{\circ}C$ for LiTaO3)

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.836-839
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• 2003

We have synthesized some phosphors in the system $CaO-Y_{2}O_3-Al_{2}O_{3}$ by combinatorial polymerized-complex method. Composition and synthetic temperature of phosphors in the liblary was screened from the emission intensities of individual samples under VUV excitation. In $Tb^{3+}$-activated $CaO-Y_{2}O_3-Al_{2}O_{3}$, green phosphors showing good intensity were found to be $CaYAl_{3}O_{7}$, $CaYalO_{4}$, $YAlO_{3}$, $Y_{3}Al_{5}O_{12}$, $Y_{4}Al_{2}O_{9}$, $Ca_{3}Al_{2}O6$.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.153-158
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• 2002

$Al_2O_3$ composites powders with 1∼11 wt% $TiO_2$ were prepared by wet method and sintered at 1350$^{\circ}C$, 1450$^{\circ}C$ for 2h. Mechanical properties and microstructural evolution were investigated in this study. $Al_2O_3$-3 wt% $TiO_2$ composite were high bulk density of 2.37 g/$cm^3$ and low apparent porosity of 6.3%. The composites containing of 3 wt% $TiO_2$ showed moderately high bending strength of 68.9 MPa and the young's modulus of 35.5 MPa. The composites with increasing $TiO_2$ contents exhibit reduced thermal expansion coefficient due to the formation of $Al_2TiO_5$ phase.