• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• Bulletin of the Korean Chemical Society
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• v.28 no.11
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• pp.1963-1966
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• 2007

Carbosilane dendrimers with silafluorenyl groups on the periphery were prepared by the reaction of 2,2'- dilithiumbiphenyl and dichlorosilyl groups on the carbosilane dendrimers at low temperature. The 1st to 4th generation of dendrimers with silafluorenyl groups were obtained with high yields and the products were purified by column chromatography. The unified properties of the dendrimers were measured by gel permeation chromatography (GPC) and displayed very low and regular polydispersity index (PDI) value. The silafluorenyl moieties on dendritic periphery accepted the potassium fluoride ions which were stabilized by criptand [222], and it proved strong photoluminescent properties.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.5A
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• pp.571-575
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• 2008

Orthogonal Frequency Division Multiplexing(OFDM) is one of the most promising techniques for 4th generation communication systems. One of the main disadvantages of OFDM is the Peak to Average Power Ratio(PAPR). In this paper, a recoverable peak cancellation(RPC) technique that recovers the cancelled part for the peak-cancelled OFDM signal is introduced. Using the RPC technique, the bit error rate(BER) performance can be greatly improved and the efficiency of the PAPR reduction is nearly that of the clipping method, at a cost of slightly reducing the transmission data rate.

• Journal of Korean Institute of Industrial Engineers
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• v.25 no.4
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• pp.476-489
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• 1999

This paper is concerned with the deployment of core technologies for automotive steel sheets, based on the structural change of global market. The main tasks of automotive industry are to ensure the energy consumption, environmental regulations, and driving safety. With social and legal requirements, this study analyzes the market creation processes with technological innovations for hot rolled, cold rolled and galvanized steel sheets during the 20th century. It has been proven that the leading country in the steel industry was also that in the automotive. The purchaser-supplier relations of sheet materials are then patternized in the regional markets of the United States and Japan, who share nearly 50% of market in the world. According to the paradigm shift of globalization, the balance of power in Porter's 5 forces has been moved to the buyers', and both industries pursue Win-Win strategies such as the PNGV(Partnership for a New Generation of Vehicles ) and design-in system with the competition.

• Journal of the Korea Institute of Military Science and Technology
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• v.19 no.3
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• pp.319-329
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• 2016

Current research trends of prediction of possible structures, synthesis and explosive characteristics of polynitrogen molecules(PNs) are reviewed. Theoretically PNs are composed only of nitrogen atoms, in which N-N bonds are either single or double bonds, and thus when these molecules decompose, release of enormous energy is accompanied. From the middle of 20th century energetic material chemists have been seeking possible structures and the methods of synthesis of these new materials. As a results, from $N_4$ to $N_{60}$ together with their ions are predicted, and experimental chemists have been trying to synthesize these materials with a few success, including the famous ${N_5}^+$ ion in 1999. Although experimental successes are very rare beyond $N_5$ until today, the author believes that renovative ideas together with sincere efforts will bring someday next generation of high energy materials such as nitrogen fullerene($N_{60}$) in reality.

• Journal of the Semiconductor & Display Technology
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• v.17 no.1
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• pp.62-65
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• 2018

In the era of the 4th Industrial Revolution, IoT products of various and specialized fields are being developed and produced. Especially, the generation of the artificial intelligence, robotic technology Multilayer substrates and packaging technologies in the notebook, mobile device, display and semiconductor component industries are demanding the need for flexible materials along with miniaturization and thinning. To do this, this work use FCCL (Flexible Copper Clad Laminate), which is a flexible printed circuit board (PCB), to implement FPCB (Flexible PCB), COF (Chip on Film) Use is known to be essential. In this paper, I propose a transfer device which prevents the occurrence of scratches by analyzing the mechanism of wrinkle and scratch mechanism during the transfer process of thin film material in which the thickness increases while continuously moving in air or solution.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.71-76
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• 2022

We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

• Korean journal of applied entomology
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• v.29 no.3
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• pp.194-200
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• 1990

The diamondback moth (Plutella xylostella L.) was selected over 24 generations with fenvalerate. The resulting resistant strain was tested to study development of insecticide resistance and cross resistance to some insecticides in the laboratory. Insecticide resistance of diamondback moth at the 24th generation devleoped 66.2 fold compared to the parent strain for fenvalerate. The fenvalerate selected strain exhibited 145 fold, a high level of cross resistance to deltamethrin, and also showed 17.4-45.0 fold cross resistance to alphamethrin, cypermethrin, fenvalerate, permethrin, and tetramethrin in the pyrethroid insecticides. The fenvalerate selected strain showed 2.5-4.3 fold, low cross resistance to diazinon, dichlorvos, EPN, BPMC, cabaryl, and methomyl. However, it did not show cross resistance to acephate, fenitrothion, phenthoate, and carbofuran.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.355-358
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• 2007

In wireless mobile communication systems, priority of voice service through high speed data and multimedia transmission requires increased service diversification. Research is being carried out in this environment, on the call admission control techniques to guarantee the diversified service's QoS. SRN (Stochastic Reward Net) is an extended version of Petri nets, well know modeling and analysis tool. In this paper, we develop SRN call admission control model considering the 4 classes of services in the 4th generation IEE 802.16e mobile communication Technology.

• Journal of Satellite, Information and Communications
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• v.8 no.1
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• pp.31-34
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• 2013

This paper deals with the interfering audio noise caused by LTE(Long Term Evolution) UE(User Equipment) which is 4th generation mobile communications on audio devices. At first, we realized that the interfering signal of the LTE UE is determined by the transmit power of the LTE UE through analysis and measurement. Then, we performed to measure audio noise level according to the variation of transmitting power level and separation distance between the LTE UE and an audio device. As a result, it is required that minimum separation distance should be 25 cm and above in order to protect audio device from the interference noise of the LTE UE with the maximum transmit power level of 22 dBm.