• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.288-293
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• 2000

BPM simulation was used in order to fabricate the LiNbO$_3$optical waveguide with optical source of He-Ne laser(λ=0.6328[$\mu$m]). we observed electric field E$_{x}$, E$_{y}$ in the x,y-direction are simulated at the LiNbO$_3$substrate (X1 55[$\mu$m]$\times$Z1 5000[$\mu$m]), where the depth, width and buffer layer of waveguide are 0.2[$\mu$m],4[$\mu$m] and 0.02[$\mu$m] respectively. By applying these parameters of single waveguide to simulate a X-switch, we have chosen index change of 0.002, width of 3[$\mu$m] and angle of 0.4$^{\circ}$~0.6$^{\circ}$of optical waveguide and under these conditions, optical beam propagates cross-side at 0.4$^{\circ}$. When applied switching voltage of 25[V], optical beam of X-switch turns cross-side to bar-side at intersection angle 0.4$^{\circ}$, index change of 0.002, waveguide width of 3[$\mu$m], electrode gap 2[$\mu$m]. By the above results, we can obtain design conditions of theoretical analysis of an X-switch optical waveguide.e.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.29-34
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• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.287-293
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• 2009

The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• Progress in Superconductivity
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• v.6 no.1
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• pp.74-78
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• 2004

YBCO coated conductor is one of the most promising materials as a new generations wire especially for practical power applications. In this work, $YBa_2$$Cu_3$$O_{7}$ -$\delta$/(YBCO) coated conductors (CC) were deposited by pulsed laser deposition (PLD) from buffer layers to superconducting layer on hi-axially textured metal tape. The oxide multilayer buffered substrate of architectures of $CeO_2$/$YSZ/Y_2$$O_3$ was fabricated by PLD at steady status. Then YBCO layer was deposited on RABiTS substrate by stationary and reel-to-reel (R2R) continuous process and we compared with deposition conditions of both processes. The degree of texture of each layer was investigated using X-ray diffraction including $\theta$-2$\theta$ scans, $\omega$-scans and $\Phi$-scans analysis. Their surface morphology was observed by scanning electron microscopy (SEM). The FWHM of the X-ray $\Phi$-scans and $\Phi$-scans indicated that YBCO and buffer layers closely replicate the in-plane and out-of-plane texture of metal tape. Critical current (Ic) at 77 K, self-field of 75.8 A/cm-width, critical temperature (Tc) of 85 K, and critical current density (Ic) of 3.7 MA/$\textrm{cm}^2$ were measured from coated conductor deposited by stationary process. And coated conductor deposited by R2R continuous process had Ic of 57.5 A/cm-width, Tc of 86.5 K and Jc of 2.0 MA/$\textrm{cm}^2$. The film also exhibits a homogeneous and dense surface morphology.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.119-122
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• 2002

The NiO buffer layers for YBCO coated conductor were prepared on textured Ni substrates by MOCVD method and the degree of texturizing and the surface roughness were analyzed X-ray pole figure and AFM and SEM. Processing variables were oxygen partial pressure and substrate temperature. (200) textured NiO layer was formed at 450~$470^{\circ}C$ and oxygen partial pressure of 1.67 Torr. Out-of-plane($\omega$-scan) and in-plane($\Phi$-scan) texture were $10.34^{\circ}$ and $10.00^{\circ}$ respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1~4.6 nm.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Progress in Superconductivity
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• v.1 no.2
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• pp.146-150
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• 2000

Step edge Josephson junctions in c-axis oriented $YBa_2Cu_3O_7$ films were fabricated on $CeO_2$ buffered sapphire substrates. The step angle was controlled in the wide range of $20^{\circ}\sim75^{\circ}$ by the Ar ion milling technique. I-V curves of junction fabricated on the thickness ratio of $\sim$0.8 and the step angle of $35^{\circ}$ were exhibited RSJ-like behavior with $I_CR_N$ product of $\sim250{\mu}A$ and critical current density of $\sim2\times10^4A/cm^2$ at 77 K. Critical current of step edge junction was increased linearly with decreasing temperature but the normal resistance was almost constant. Total samples of step edge Josephson junction was satisfied a scaling behavior of $I_CR_N{\propto}(J_C)^{0.5}$.

• Analytical Science and Technology
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• v.17 no.6
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• pp.470-475
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• 2004

The mercury film thin layer flow cell (MFTLFC) which yielded the highest sensitivity for the electrochemical reduction of doxorubicin was constructed by coating the glassy carbon working electrode (GCE; $A=0.208cm^2$) with $5{\mu}L$ of HgO coating solution (0.5% HgO + 0.25% polystyrene/cyclohexanone) and subsequently followed by applying a potential of -0.40 V for 300 sec in the flow stream of an acetate buffer of pH 4.5. The voltammogram of doxorubicin reached the diffusion current plateau at -0.53 V vs. a Ag/AgCl (3 M NaCl) in the MFTLFC. The diffusion current (Id) of doxorubicin at the MFTLFC was 1.7 times greater than the Id obtained at the TLFC employing a bare glassy carbon working electrode. When the peak areas (electric charge) were plotted vs. concentrations of standard anthracyclines, the calibration factors of doxorubicin and daunorubicin were $1.12{\times}10^8{\mu}C/M$ (coefficient of determination; $R^2$: 0.969) and $0.98{\times}10^8{\mu}C/M$> ($R^2$: 0.999), respectively in the concentration range between $1.0{\times}10^{-8}M$ and $1.0{\times}10^{-6}M$.