• Economic and Environmental Geology
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• v.44 no.5
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• pp.359-372
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• 2011

TA26 seamount, which is located at south part of Tonga arc, occurs widely hydrothermal plume and is area that sampled hostrock, hydrothermal ore and hydrothermal alteration rock for this study. Hostrocks are basalt and basaltic andesite. Altered rocks by hydrothermal solution consists of plagioclase, pyroxene, pyrite, ilmenite, amorphous silica, barite, smectite, iron sulfates, Fe-Si sulfates and Fe silicates. Gains and losses of major, trace and rare earth elements during wallrock alteration suggest that $K_2O$(+0.04~+0.45 g), $SiO_2$(-6.52~+10.56 g), $H_2O$(-0.03~+6.04 g), $SO_4$(-0.46~+17.54 g), S(-0.46~+13.45 g), total S(-0.51~+16.93 g), Ba(-7.60~+185078.62 g), Sr(-36.18~+3033.08 g), Ag(+54.83 g), Au(+1467.49 g), As(-5.80~+1030.80 g), Cd(+249.78 g), Cu(-100.57~+1357.85 g), Pb(+4.91~+532.65 g), Sb(-0.32~+66.59 g), V(-113.58~+102.94 g) and Zn(-49.56~+14989.92 g) elements are enriched from hydrothermal solution. Therefore, gained(enriched) elements(($K_2O$, $H_2O$, $SO_4$, S, total S, Ba, Sr, Ag, Au, As, Cd, Cu, Pb, Sb, V, Zn) represent a potentially tools for exploration of sea-floor hydrothermal deposits from the Tonga arc.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.36-38
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• 2005

This study is about how to lower the driving voltage that enables to move the micro droplet by the EWOD (Electro Wetting On Dielectric) mechanism. EWOD is well known that it is used ${\mu}-TAS$ digital micro fluidics system. As the device which is fabricated with dielectric layer between electrode and micro droplet is applied voltage, the hydrophobic surface is changed into the hydrophilic surface by electrical property. Therefore, EWOD induces the movement of micro droplet with reducing contact angle of micro droplet. The driving voltage was depended on the dielectric constant of dielectric layer, thus it can be reduced by increase of dielectric constant. Typically, very high voltage ($100V{\sim}$) is used to move the micro droplet. In previous study, we used $Ta_{2}O_{5}$ as the dielectric layer and driving voltage was 23V that reduced 24 percent compared with $SiO_2$. In this study, we used $BZN(Bi_{2}O_{3}ZnO-Nb_{2}O_{5})$ layer which had high dielectric constant. It was operated the just 12V. And micro droplet was moved within Is on 15V. It was reduced the voltage until 35 percents compare with $Ta_{2}O_{5}$ and 50 percents compare with $SiO_2$. The movement of micro droplet within 1s was achieved with BZN (ferroelectrics)just on 15V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.167-170
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• 2000

The structural changes and the dielectric properties of $(Ba_{1-x}Ca_x)(Mg_{1/3}Ta_{2/3})O_3$ (x=0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The densities of samples were gradually decreased with increasing x, (BMT=7.69, CMT=5.25 $g/cm^3$). The crystal structure of BMT was a untiltied perovskite structure, however BCMT showed antiphase tilting and antiphase-inphase tilting structure. The dielectric constant($\varepsilon_r$) of the highest value was 33 at x=0.2 (BMT=24, CMT=17). The maximum quality factor was 27,500GHz in BMT. The quality factor· of BCMT was decreased to x<0.2 (5,000GHz), and was gradually increased to x>0.2. The temperature coefficients of dielectric constant was positive at x<0.8, and negative in CMT.

• Advances in materials Research
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• v.5 no.3
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• pp.181-192
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• 2016

In this work effect of high energy milling on the structural and electrical properties of $Ba(Fe_{1/2}Ta_{1/2})O_3$ (BFT) ceramic synthesized using standard solid-state reaction method were investigated. X-ray diffraction studies indicated that the unit cell structure for all the samples to be hexagonal (space group: P3m1). FTIR spectra also confirmed the formation of BFT without any new phase. The milled (10 h) BFT ceramic showed the formation of small grain sizes (<$2{\mu}m$) which is beneficial for dielectric applications in high density integrated devices. Besides, the milled (10 h) BFT ceramic sample exhibited superior dielectric properties (enhancement in ${\varepsilon}^{\prime}-value$ and reduction in $tg{\delta}-value$) compared to un-milled one. Impedance analysis indicated the negative temperature coefficient of resistance (NTCR) character. The correlated barrier hopping model (jump relaxation type) is found to successfully explain the mechanism of charge transport in present ceramic samples.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.126-132
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• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.320-321
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• 2000

전기장 발광현상(Electroluminescence, 이하 EL)은 1936년 Destriau$^{[1]}$ 가 ZnS:Cu 분말에서 처음 전기장 발광현상을 발견한 이래 TFEL(Thin Film EL)소자의 구동전압을 감소시키는 문제는 ACTFEL(Alternating Current Thin Film EL)소자의 개발이후 계속적인 관심의 대상이 되어왔다. TFEL 소자는 전기적으로 용량소자이므로 전기장 인가시 각 층의 정전용량의 역수에 비례하는 전압이 분배되므로 동일한 조건의 형광막 사용시 소자의 구동전압을 낮추기 위해서는 절연박막의 두께를 줄이는 방법과 유전율이 높은 물질을 사용하는 방법이 있으나, 전자의 경우에는 박막의 결함이 생기기 쉬워 한계가 있기 때문에 고유전율 특성을 갖는 새로운 물질을 개발하는 것이 바람직하다. Ta$_2$O$_{5}$ 박막의 경우 작은 누설전류 특성과 고유전율 특성으로 인해 고집적을 요하는 반도체 분야에서 많은 연구가 진행되어 왔다. 또한 EL소자 응용시 효율면에서 우수한 특성이 기대되며, 특히 수분에 강한 특성을 가지고 있어 EL소자의 안정성이 예견되는 바이다. 본 연구에서는 Ta$_2$O$_{5}$ 박막의 산소 결핍에 따른 전기적 특성에 대해 연구하였고 Ta$_2$O$_{5}$ 박막을 이용한 저전압에서 구동가능한 전기장 발광소자를 제작하여 전기광학적 특성에 대해 연구하였다. (중략

• Journal of Magnetics
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• v.9 no.1
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.510-515
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• 1986

Spectra for the $v_3$+ Amide II combination band of thioacetamide(TA) were obtained in carbon tetrachloride solutions and in very dilute solutions of TA-N,N-dimethlylacetamide (DMA) in carbon tetrachloride in the range of 5~55$^{\circ}$C. The combination band in the three component system can be resolved into components due to monomeric TA, 1 : 1 TA-DMA complex and 1 : 2 TA-DMA complex. In the dilute solutions the experimental spectrum was resolved by using the computer into its two Lorentzian-Gaussian product components which have been identified with the monomeric TA and the 1 : 1 complex. The equilibrium constants and thermodynamic parameters of 1 : 1 complex were determined by analysis of concentration and temperature dependent spectra. The ${\Delta}H^{\circ}$ and ${\Delta}S^{\circ}$ for the 1 : 1 complex were -14.4 KJ mol$^{-1}$ and -15.6 J mol$^{-1}deg^{-1}$, respectively.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.442-448
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• 2021

In this work, the (K_1-xAg_x)(Ta_0.8Nb_0.2)O₃ (x=0.1-0.4) ceramics were fabricated using mixed-oxide method, and their structural and electrical properties were measured. All specimens represented a pseudo cubic structure with the lattice constant of 0.3989 nm. When 0.4 mol of Ag was added, second phases induced from metallic Ag and K₂(Ta,Nb)₆O₁₆ phase were observed. Dielectric constant and dielectric loss of K(Ta_0.8Nb_0.2)O₃ specimen doped with 0.3 mol of Ag were 2,737 and 0.446, respectively. The curie temperature was about -5℃, which does not change with Ag addition. The remanent polarization began to decrease sharply around 12~15℃, and the temperature at which the remanent polarization began to decrease as the applied voltage increased shifted to the high temperature side. The electrocaloric effect (ΔT) and electrocaloric efficiency (ΔT/ΔE) of the (K_0.7Ag_0.3)(Ta_0.8Nb_0.2)O₃ ceramics were 0.01024℃ and 0.01825 KmV^-1, respectively.