• The Korean Journal of Food And Nutrition
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• v.16 no.4
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• pp.303-309
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• 2003

This study was performed to investigate the antimutagenic and antioxidative activities of pine pollen with respect to the microbial mutation induced by various mutagens such as 1-NP, daunomycin, 2-NF, MNNG, NaN$_3$, 4NQO, 4-NOPD, AFB$_1$, Trp-P-1, 2-AF and oxidative mutagens such as t-BOOH, H$_2$O$_2$. Pine pollen, originally extracted with hexane, was reextracted with 70% methanol. The results obtained using the methanol extract, in terms of the antimutagenicity observed in relation to ten kinds of mutagens, showed that it exhibited 17.8, 82.2 and 80.9% inhibitory effects against daunomycin, AFB$_1$, and Trp-P-1, respectively, in Salmonella. typhimurium TA98 and a 72.3% inhibitory effect against AFB$_1$in S. tyPhimurium TA100. In terms of the antimutagenicity exhibited in relation to t-BOOH, a 72.3% inhibitory effect was observed, but no antimutagenicity was observed in relation to the other mutagens and strains. The methanol extract was further fractionated by chloroform, ethyl acetate, n-butanol. In S. typhimurium TA98, the chloroform(150 $\mu\textrm{g}$/plate) fraction showed strong antimutagenic effects of 55.6%, 93.7% and 93.5%, while the ethyl acetate(100 $\mu\textrm{g}$/plate) fraction showed 11.4%, 74.3% and 85.2% in relation to the mutagenicity induced by daunomycin, AFB$_1$and Trp-P-1, respectively. In S. typhimurium TA100, the chloroform and ethyl acetate fractions showed antimutagenic effects of 95.1% and 62.5%, respectively, on the mutagenicity induced by AFB$_1$. In S. typhimurium TA102, the chloroform fraction showed an antimutagenic effect of 93.6% on the mutagenicity induced by t-BOOH.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.361-366
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• 2014

$MnO_2$-doped $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3(0.985LNKNTS+0.015KNbO_3)$ lead-free ceramics were fabricated by conventional solid state method to develop excellent dielectric and piezoelectric properties. The result of X-ray diffraction patterns obviously indicated that all of the specimen has pure perovskite structure without secondary phase. In addition, orthorhombic phase and coexistance region of orthorhombic-tetragonal phase (MPB) were observed with amount of $MnO_2$. The optimal values of ${\rho}$=4.70 $g/cm^3$, $d_{33}=238$ pC/N, $k_P=0.46$, $Q_m=121$, ${\varepsilon}_r=849$, and $T_C=225^{\circ}C$ were obtained at 0.01 mol% $MnO_2$ doped $0.985LNKNTS+0.015KNbO_3$ ceramics sintered at $990^{\circ}C$ for 5 h, respectively. Hence, it was indicated that the suitable amount of $MnO_2$ could improve the electrical properties of $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3$ ceramics.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.184-190
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• 2003

$Sr_{0.9}Bi_{2.1}Ta_2O_9$thin films were deposited on $IrO_2$ electrode by spin coating method using photosensitive sol-gel solution. To ensure the UV-exposure effect on SBT thin films, UV irradiated films and non-UV irradiated films were analyzed by XRD, SEM. As a result, UV-irradiation on SBT thin films promoted grain growth of SBT compared with no UV irradiation. In case of the UV irradiated films annealed at$740{\circ}C$for 1 h in an oxygen ambient, the 2Pr value and Pr/Ps at${pm}5$V were$11.48{mu}C/cm^2$and 0.53, respectively. 2Pr values of the UV irradiated SBT thin films at$660-740{circ}C were approximately 12% higher than those of non-UV irradiated thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.88-92
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• 2002

$Ba(Zn_{0.8}Co_{0.2})_{1/3}Ta_{2/3}O_3$ [BZCT(80/20)] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1450{\sim}1550^{\circ}C$ for 5hr. in air. The structural properties of BZCT(80/20) ceramics were investigated as a function of sintering temperature. The BZCT(80/20) ceramics sintered at $1550^{\circ}C$ showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZCT(80/20) ceramics sintered at $1550^{\circ}C$ was 7.50[$g/cm^2$]. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.205-209
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• 2016

In this paper, piezoelectric ceramics with the composition of $(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.8975}Sb_{0.065}Ta_{0.0375})O_3+0.3wt%\;CoO+x\;CuO$ ($0.005{\leq}x{\leq}0.025$) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling $factor(k_p)=0.415$, piezoelectric constant $(d_{33})=166pC/N$ and piezoelectric figure of merit $d_{{33}*}g_{33}=5.47pm^2/N$ were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at $1,000^{\circ}C$ for 3 h.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.276-279
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• 2000

Ferroelectric properties of $SrBi_2TaNbO_9$ (SBTN) thin films were changed by the amount of Bi content in SBTN. We suggested that the addition of excess Bi into the films could be accomplished by heat-treating $SBTN/Bi_2O_3/SBTN$ heterostructure fabricated by r.f. magnetron sputtering method. Excess Bi composition was controlled by the thickness of the sandwiched $Bi_2O_3$ from 0 to $400\;\AA$. When the SBTN thin films were inserted by $400\;{\AA}\;Bi_2O_3$ layer, $Bi_2Pt$ phase was formed as a second phase in SBTN films, resulting in poor ferroelectric properties. The onset temperature for hysteresis loop can be reduced by heat treating $SBTN/Bi_2O_3/SBTN$ heterostructure. The films with $SBTN/Bi_2O_3(100\;{\AA})/SBTN$ hetero-structure followed by annealing at $650^{\circ}C$ for 30 min show 2Pr and Ec of $5.66\;{\mu}C/\textrm{cm}^2$ and 54 kV/cm, respectively.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.98.1-98
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• 2003

• Nuclear Engineering and Technology
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• v.28 no.5
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• pp.458-466
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• 1996

The effects of dopants on the modification of microstructure of UO$_2$ and UO$_2$-4wt%CeO$_2$ sintered pellets have been studied in hydrogen and $CO_2$/CO mixture atmospheres by using $Ta_2O_5$, TiO$_2$ and $Nb_2O_5$ as sintering additives. The dopant were added as oxide powders and homogenized by attrition milling. The mixed powders were pressed, and then sintered in hydrogen at 1$700^{\circ}C$ , or in oxidizing atmosphere using Controlled $CO_2$/CO mixtures at 125$0^{\circ}C$. Both density and microstructure of UO$_2$ are modified by the addition of dopants in reducing atmosphere. The sintered density is increased with $Ta_2O_5$ addition up to 0.33wt% and subsequently decreased with higher content of the additive. The effect on the densification and the gain growth are apparent with the addition of 0.24wt% $Nb_2O_5$. With 0.lwt% titania and 0.6wt% $Ta_2O_5$, the sintered density is decreased, but the grain size is increased. In oxidizing atmosphere, the grain sizes for UO$_2$ doped with the above additives are smaller than that for pure UO$_2$. The grain size of Ta or Nb-doped UO$_2$ is decreased with increasing $CO_2$/CO ratio, but that of pure UO$_2$or T-doped UO$_2$ is increased. A large portion of second phases is observed in UO$_2$ doped with 0.lwt% TiO$_2$ sintered in hydrogen atmosphere, while, in $CO_2$/CO atmospheres, the second phases or dopant agglomerates are not observed. For UO$_2$-4wt%CeO$_2$ mixed oxide, the effect of additives on the gain growth is not so much as that for the pure UO$_2$. This is attributed to the formation of clusters by dopant cations and Ce ions, so that the additives contribute to a lesser exent to the grain growth for the mixed oxide.