• 제목/요약/키워드: ${Ta_2}{O_5}$

검색결과 516건 처리시간 0.029초

도전체 매개반응(EMR)법에 의한 미세 Ta 분말 제조 (Production of Fine Tantalum Powder by Electronically Mediated Reaction (EMR))

  • 박일;이철로;이오연
    • 한국재료학회지
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    • 제14권10호
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    • pp.719-724
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    • 2004
  • Production of fine tantalum powder by calciothermic reduction of tantalum oxides ($Ta_{2}O_5$) pellet through an electronically mediated reaction (EMR) has been investigated. $Ta_{2}O_5$ pellet feed and reductant calcium-nickel (Ca-Ni) alloy were charged into electronically isolated locations in a molten $CaCl_2$ bath. The current flow through an external path between the feed (cathode) and reductant (anode) locations was monitored. The current approximately 4.7A was measured during the reaction in the external circuit connecting cathode and anode location. Tantalum powder with approximately 99 $mass\%$ purity was readily obtained after each experiment. Tantalum powder by EMR using $Ta_{2}O_5$ pellet feed was fine compared with that of metal powder by metallothermic reduction and EMR using $Ta_{2}O_5$ powder feed.

$Ta_2O_5/Al/SiO_2/P-Si$ MIS형(形) 태양전지(太陽電池)의 제작(製作)과 특성(特性) (Fabrication and Characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS Solar Cells)

  • 노경석;손연규
    • 태양에너지
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    • 제6권2호
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    • pp.70-75
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    • 1986
  • The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

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LiTaO3 단결정 내의 Fe3+ 상자성 불순물 이온에 대한 에너지 준위 계산 (Energy Level Calculation of Fe3+ Paramagnetic Impurity Ion in a LiTaO3 Single Crystal)

  • 염태호;윤달호;이수형
    • 한국자기학회지
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    • 제24권3호
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    • pp.71-75
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    • 2014
  • 정비조성으로 성장시킨 $LiTaO_3$ 단결정 및 비정비조성으로 성장시킨 $LiTaO_3$ 단결정 내에 불순물로 도핑된 $Fe^{3+}$ 상자성 불순물 이온의 바닥 상태에서의 에너지 준위를 계산하였다. $LiTaO_3$ 단결정 내에서 육방정계 대칭성을 갖는 $Fe^{3+}$ 이온의 전자 상자성 공명 상수인 분광학적 분리인자 g 및 영자기장 갈라지기 D 값을 이용하여 6개의 에너지 준위 사이의 에너지 준위를 계산하였다. 자기장을 결정학적 주축 ([100], [001], [111])과 나란하게 가하여 자기장을 증가시켜 감에 따라 얻은 에너지 준위 갈라지기는 자기장을 가한 방향에 따라서 서로 다른 값을 나타내었다. ${\mid}{\pm}5/2$ > ${\leftrightarrow}{\mid}{\pm}3/2$ >및 ${\mid}{\pm}3/2$ > ${\leftrightarrow}{\mid}{\pm}1/2$ > 사이의 전이에서 계산한 영자기장 갈라지기 값은 정비조성으로 성장시킨 $LiTaO_3$ 단결정과 비정비조성으로 성장시킨 단결정의 경우에 각각 12.300 GHz, 6.150 GHz와 59.358 GHz, 29.679 GHz이다. 결정성장 조건에 따라 에너지 준위가 상당히 다른 것으로 나타났다.

$ZrO_2$가 첨가된 Ba(${Zn_{1/3}}{Ta_{2/3}}$)$O_3$의 미세구조 및 유전특성 연구 (Structural and Microwave Dielectric Properties of $ZrO_2$Doped Ba(${Zn_{1/3}}{Ta_{2/3}}$)$O_3$Ceramics)

  • 조범준;양정인;남산;최창학;이확주;박현민;류선윤
    • 한국세라믹학회지
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    • 제38권2호
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    • pp.117-121
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    • 2001
  • 본 연구에서는 Zr $O_2$첨가가 Ba(Zn$_{1}$3/Ta$_{2}$3/) $O_3$(BZT)세라믹의 구조와 고주파 유전특성에 미치는 영향을 조사하였다. 모든 시료에서 $Ba_{5}$Ta$_4$ $O_{15}$ 이차상이 발견되었으며 Zr $O_2$의 첨가량이 증가하면 $Ba_{5}$Ta$_4$ $O_{15}$ 상의 양은 감소하였다. 반면에 Zr $O_2$의 첨가량이 1.5 mol% 이상인 시료에서는 $Ba_{0.5}$Ta $O_3$상이 발견되었다. BZT의 입자 크기는 약 1$mu extrm{m}$ 정도였지만, Zr $O_2$를 첨가하면 입자 크기가 증가하였다. SEM 및 TEM 분석에 의하여 Zr $O_2$가 첨가되면 액상이 존재하는 것을 알 수 있었으며, 이로 인하여 입자가 성장되는 것이 발견되었다. 시편의 밀도는 소량의 Zr $O_2$를 첨가하면 증가하지만 Zr $O_2$첨가량이 증가하면 감소하였다. 유전율은 모든 시료가 27에서 30 사이의 값을 가지고 있었다. 공진주파수 온도계수는 소량의 Zr $O_2$을 첨가하였을 때는 변화하지 않았지만 첨가량이 2.5 mol% 이상에서는 증가하였다. Q$\times$f 값은 Zr $O_2$을 첨가하면 증가하였고, 입자 성장이 완료되는 조성에서 최대 값을 보였다. 본 연구에서는 Zr $O_2$를 2.0 mol% 첨가하고 15$50^{\circ}C$에서 10시간 소결한 시료에서 최대의 Q$\times$f 값(164,000)을 얻을 수 있었다.다.다.

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Electrical Properties of Metal - Insulator- Metal Diode for AM-LCD Driving

  • Kim, Jang-Kwon;Lee, Myung-Jae;Kim, Dong-Sik;Chung, Kwan-Soo
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1125-1128
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    • 2002
  • Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

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Improvement of the Figure of Merit in Pb[(Mg1/3Ta2/3)0.7Ti0.3]O3 Systems

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
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    • 제25권5호
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    • pp.88-91
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    • 2016
  • The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

LSMCD 공정으로 제조한 SBT 박막의 Sr/Ta 몰비에 따른 강유전 특성 (Effect of Sr/Ta mole ratio on the ferroelectric properties of SBT thin films fabricated by LSMCD process)

  • 박주동;김지웅;오태성
    • 한국진공학회지
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    • 제9권4호
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    • pp.360-366
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    • 2000
  • LSMCD (Liquid Source Misted Chemical Deposition)공정으로 Sr/Ta몰비 0.35~0.65 조성범위에서 150 nm 두께의 $Sr_xBi_{2.4}Ta_2O_9$ (SBT)박막을 제조하여, Sr/Ta몰비에 따른 결정상과 미세구조, 강유전 특성 및 누설전류 특성을 분석하였다. LSMCD 공정으로 제조한 SBT박막은 Sr/Ta 몰비 0.425의 조성에서 최적의 강유전 특성을 나타내어 $\pm$5 V의 구동전압 인가시 15.01 $\mu$C/$\textrm{cm}^2$의 잔류분극 $2P_{r}$과 41kV/cm의 항전계 $E_{c}$를 나타내었다. LSMCD공정으로 제조한 Sr/Ta 몰비 0.35~0.5 범위의 SBT 박막은 100 kV/cm의 전기장 하에서 $10^{-5}$A/$\textrm{cm}^2$ 미만의 낮은 누설전류 밀도를 나타내었으며, $\pm$5V의 구동전압 인가시 $10^{10}$회의 스위칭 후에도 잔류분극 감소가 1% 미만인 우수한 분극피로 특성을 나타내었다.

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$Na_2O$ 첨가에 따른 $(Na_{0.5}K_{0.5})NbO_3-LiTaO_3$ 세라믹스의 압전특성 (Effect of $Na_2O$ Addition on Piezoelectric Properties in $(Na_{0.5}K_{0.5})NbO_3-LiTaO_3$ Ceramics)

  • 김민수;오석;이대수;박언철;정순종;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.315-316
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    • 2006
  • Dense $0.95(Na_{0.5}K_{0.5})NbO_3-0.05LiTaO_3$ (NKN-LT) ceramics were developed by conventional sintering process. Sintering temperature was lowered by adding $Na_2O$ as a sintering aid. The electrical properties of NKN-LT ceramics were investigated as a function of $Na_2O$ concentration. When the sample sintered at $1000^{\circ}C$ for 4h with the addition of 1 mol% $Na_2O$, electromechanical coupling factor ($k_p$) and piezoelectric coefficient ($d_{33}$) of NKN-LT ceramics were found to reach the highest values of 0.43 and 190 pC/N, respectively.

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상용 소결법을 이용한 $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ 세라믹스의 압전 및 유전 특성 (Piezoelectric and Dielectric Characteristics of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ Ceramics using Conventional Solid State Sintering method)

  • 김민수;김신웅;오석;정순종;민복기;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.210-220
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    • 2006
  • Dense $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were developed by conventional sintering process. The electrical properties of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were investigated as a function of Li substitution. When the sample sintered at $1100^{\circ}C$ for 4 h with the Substitution of 2 mol% Li, electro-mechanical coupling factor ($k_p$) and piezoelectric coefficient ($d_{33}$) were found to reach the highest values of 0.42 and 210 pC/N, respectively.

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하소조건에 따른 $Ba(Mg_{1/3}Ta_{2/3})O_3$[BMT] 세라믹스의 마이크로파 유전특성 (Microwave Dielectric Properties of $Ba(Mg_{1/3}Ta_{2/3})O_3$[BMT] Ceramics with Ca1cining Condition)

  • 황태광;임성수;정장호;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.84-87
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    • 2000
  • The microwave dielectric properties of complex perovskite-structured $Ba(Mg_{1/3}Ta_{2/3})O_3$ ceramics were investigated with calcining condition. The BMT ceramics were prepared by conventional mixed oxide method. Calcining conditions were $1200^{\circ}C$ for 10hr., $1300^{\circ}C$ for 2hr., and 5hr., respectively. And the specimens were sintered at $1650{\mu}m$. The structural and microwave properties of BMT ceramics were investigated by XRD, SEM and network analyzer. In the case of BMT ceramics calcined at $1300^{\circ}C$ for 5 hr., dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.26, 31,144(at 1GHz), 6.11[ppm/$^{\circ}C$], respectively.

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