• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.278-281
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• 1991

1) The specimen with 0.175[mol%] of additive $Sb_2O_3$ was minute and didn't appear porosity. The relation between the ratio of resistivity at $160^{\circ}C$ to that at $121^{\circ}C$ of the specimen with 0.175[mol%] of additive $Sb_2O_3$ was $3{\times}10^4$ and it's great value from among specimens. 2) The curie temperature of the specimen with 0.2 [mol%] of additive $Sb_2O_3$ was $140^{\circ}C$ AND it's great value from among specimens and those of other were $121^{\circ}C$ in all therefore, the specimen with above 0.2[mol%] of additive $Sb_2O_3$ is not match for PTCR 3) The variation of radiation properties of the specimen with 0.2[mol%] of additive $Sb_2O_3$ was very steep in the range of far-infrared $5{\sim}10[{\mu}m]$ but radiation percentage was very high of 0.92 in the range of $10[{\mu}m]$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.236-239
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• 1999

This paper is the study for electrical characteristic of PZT ceramics with Sb$_2$O$_3$, CoO additive. Effect of Sb$_2$O$_3$, CoO additive ranged from 0.0 wt% to 1.2wt% on the electrical characteristic of the PZT ceramics have been investigated. In the case of Sb$_2$O$_3$ 0.6wt%, the maximum vague of mechanical quality factor(Qm) was obtained 124.11 at l15$0^{\circ}C$. And, additive CoO 1.2wt% was obtained 184.12 at l15$0^{\circ}C$. The electromechanical coupling factor(kp) was increased by increasing the amount of Sb$_2$O$_3$, CoO additive. The maximum value of electromechanical coupling factor(kp) was obtained 58.35 with Sb$_2$O$_3$1.2wt% additive at l15$0^{\circ}C$. Dopped with additive CoO 0.9wt%, electromechanical coupling factor(kp) was obtained 47.84 at 115$0^{\circ}C$.

• 전기학회논문지
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• 제65권10호
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• pp.1697-1701
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• 2016

The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.369-372
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• 2000

ZnO varistor is studied to sintering condition and mixing condition for the improvement to non linear of electrical characteristics. In this paper, ZnO varistor, ZnO-Bi$_2$O$_3$-Y$_2$O$_3$-MnO-Cr$_2$O$_3$-Sb$_2$O$_3$series, is fabricated with Sb$_2$O$_3$mol ratio(0.5~4[mol%]) and sintered at 1250[$^{\circ}C$] for 2 hours. The grain size to Sb$_2$O$_3$moi ratio was measured by fractal mathematics. The ZnO varistors that Sb$_2$O$_3$mot ratio is 1[mol%] were shown small grain size because of spinel phase. The fractal dimension were increased with increasing of Sb$_2$O$_3$mo ratios. The capacitance of ZnO varistors with increasing of Sb$_2$O$_3$additive in voltage-capacitance characteristics was decreased by small grain size.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• 한국세라믹학회지
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• 제17권2호
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• pp.75-79
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• 1980

The effect of the additive on the dielectric property of $TiO_2$ containing 0-2.5wt %. $Sb_2O_3$ was investigated as a function of frequency from $5{\times}10^4$ to $6.3{\times}10^7$ cps and temperature from 25 to 375$^{\circ}C$. The dielectric constant increased with increasing $Sb_2O_3$ concentration from 0.25 to 0.5wt.% It is due to space charge polarization caused by increasing anion vacanices. The dielectric constant decreased for further increase in $Sb_2O_3$ concentration. It can be explained by increasing grain size effect rather than space charge polarization.

• 한국세라믹학회지
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• 제23권6호
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• pp.37-44
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• 1986

Yttria-antimonia-stabilized zirconia was investigated with respect to the amount of $Sb_2O_3$ addition in the range of 0.5~5mole% to the base composition of $(ZrO)_{0.92}(Y_2O_3)_{0.08}$ The sinterbility modulus of rupture Vickers hardness evaporation of components phase form-tion and mcicrostructure were evaluated with antimonia content. Also two probe A. C conductivity measurement was subjected to all specimens and the best results are achieved with 1mol% $Sb_2O_3$ as a sinter agent and relative density of~98% obtained at 140$0^{\circ}C$ and this composition has a maximum electrical conductivity due to the possible substition of $Sb^{3+}$ for $Zr^{4+}$ site. The effect of $Sb_2O_3$ on the electrical conductivity of th bulk and the grain boundaries has on investigated using frequency dispersion analysis (5~106 Hz) Antimonia addition has a negative in-fluence on both the bulk and the grain boundary conductivity except for a 1 mon% addition. The additive antimonia has improve a modulus of rupture to 60~MPa due to metastable-tetragonal phase apparence and decrease the hardness with increasing the $Sb_2O_3$ content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.955-958
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• 2001

The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

• 한국주조공학회지
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• 제6권2호
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• pp.93-103
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• 1986

It is very important to obtain wear resistant ductile iron by adding more economical alloying elements. In this study, 10 heat of Mg-treated ductile iron were made according to Sb content (0-0.1% Sb). Each melt was tasted to 30 ${\o}test$ bars in $CO_2$ mold under the same condition and inspected wear characteristics, mechanical properties and microstructures. The results obtained from this study are as follows; 1. It is confirmed that Sb should be a simple and useful additive for improving wear resistance in ductile iron. 2. Hardness of ferrite and pearlite is improved with increasing Sb amount in ductile iron. 3. For ductile iron, the recommended ladle addition of Sb amount is to 0.02-0.03%. 4. Sb has adverse influence on spheroidizing of graphite if the amount is over 0.04%.

• 전기의세계
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• 제31권6호
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.