• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.309-315
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• 1994

순간증착법으로 p형(Bi0.5Sb1.5Te3)과 n형(Bi2Te24Se0.6)열전박막을 제조하여 상온에서 Seebeck 계 수, 전기전도도 및 열전성능지수를 측정하였다. 또한 금속재 mask를 이용하여 다중접점 박막형 열전소 자를 제작하고 그 작동특성을 조사하였다. 이때 소자의 고온부와 저온부의 온도를 직접측정하기 위하여 copper/constantan 박막을 접점부에 증착하여 열전쌍이 되게 하였다. p/n 접점이 5쌍이 소자의 경우 Peltier 효과에 의해 생성된 최대온도차는 22K이었다.

• Journal of Powder Materials
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• v.22 no.4
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.98-99
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• 1992

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.246-252
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• 2000

Thermoelectric properties of the $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy, prepared by mechanical alloying and hot pressing, were investigated with the variation of the hot-pressing temperature ranging from $300^{\circ}C$ to $550^{\circ}C$. Contrary to the p-type behavior of single crystal, the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy exhibited n-type conduction without addition of donor dopant. When the $Bi_2(Te_{0.85}Se_{0.15})_3$ powders were annealed in $(50{\%}\;H_2+50{\%}\;Ar)$ atmosphere, the hot-pressed specimens exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Figure-of-merit of the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy was improved by hot pressing at temperatures above $450^{\circ}C$, and the maximum value of $1.92{\times}10^{-3}/K$ was obtained for the specimen hot-pressed at $550^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.49-49
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.145-145
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.385.1-385.1
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• 2014

$Bi_2Te_3$는 전기적, 열적 특성 등이 아주 흥미로운 소재로, 열전소자 응용 및 위상절연체(Topologycal insulator: TI)로써의 연구가 활발히 진행되고 있는 소재이다. 한편, 전기적, 광학적, 기계적, 열적 특성들이 매우 뛰어나 신소재로 각광받고 있는 그래핀은 나노소재의 합성 분야에서도 기판으로 활용되어, 최근에는 그래핀을 기판으로 한 고품질 나노소재의 합성에 관한 연구보고가 증가하고 있다. 이에, 본 연구에서는 그래핀을 $SiO_2$에 전사한 기판 및 $SiO_2$ 기판 위에 $Bi_2Te_3$ 나노 구조를 합성하고 다양한 분석을 하였다. 라만 스펙트럼 및 XRD를 통해 $Bi_2Te_3$ 임을 확인하였고, 비정질 $SiO_2$기판과 결정질 그래핀/$SiO_2$기판 그리고 구리호일과 그래핀/구리 호일 위에서 합성된 $Bi_2Te_3$ 나노구조를 SEM 및 TEM을 이용하여 비교 분석 하였다. 또한 기초적인 전기물성을 평가하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.308-308
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• 2012

Electrodeposition of thermoelectric materials, including binary and ternary compounds, have been attracting attentions, because its many advantages including cost-effectiveness, rapid deposition rate, and ease of control their microstructure and crystallinity by adjusting electrodeposition parameters. In this work, $Bi_xTe_y$ films were potentiostatically electrodeposited using Au/Ni(80/20 nm)/Si substrate as the working electrode in solutions consisting of 10mM $TeO_2$ and 1M $HNO_3$ where $Bi(NO_3)_3$ was varied from 2.5 to 10 mM. Prior to electrodeposition potentiostatically, linear sweep voltammograms (LSV) were acquired with a standard three-electrode cell. The $Bi_xTe_y$ films deposited using the electrolyte containing low Bi ions shows p-type conductivity, which might be attributed by the large incorporation of Te phases. Near stoichiometric $Bi_2Te_3$ thin films were obtained from electrolytes containing 5mM $Bi(NO_3)_3$. This film shows the maximum Seebeck coefficient of $-100.3{\pm}12.7{\mu}V/K$. As the increase of Bi ions in electrolytes decreases the Seebeck coefficient and resistivity. The maximum power factor of $336.2{\mu}W/m{\cdot}K^2$ was obtained from the film deposited using the solution of 7.5mM $Bi(NO_3)_3$.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.28-34
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• 2002

Thin films of $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5, and 1.0) are grown by vacuum evaporation. XRD analysis shows the amorphous nature of the films, and the composition studies confirm the stoichiometry of the films. Microstructural parameters of the films have been calculated and used to explain the electrical and optical properties of the films. It is observed that the carrier type has changed from p- to n-type at higher concentration (x = 1.0) of Bi. The resistivity of the films decreases rapidly with the increase of Bi concentration. However, the refractive index and optical band gap of the films increase with the Bi concentration.

• Journal of Powder Materials
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• v.17 no.2
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• pp.107-112
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• 2010

Carbon-nanotube-embedded bismuth telluride (CNT/$Bi_2Te_3$) matrix composites were fabricated by a powder metallurgy process. Composite powders, whereby 5 vol.% of functionalized CNTs were homogeneously mixed with $Bi_2Te_3$ alloying powders, were successfully synthesized by using high-energy ball milling process. The powders were consolidated into bulk CNT/$Bi_2Te_3$ composites by spark plasma sintering process at $350^{\circ}C$ for 10 min. The fabricated composites showed the uniform mixing and homogeneous dispersion of CNTs in the $Bi_2Te_3$ matrix. Seebeck coefficient of CNT/$Bi_2Te_3$ composites reveals that the composite has n-type semiconducting characteristics with values ranging $-55\;{\mu}V/K$ to $-95\;{\mu}V/K$ with increasing temperature. Furthermore, the significant reduction in thermal conductivity has been clearly observed in the composites. The results showed that CNT addition to thermoelectric materials could be useful method to obtain high thermoelectric performance.