• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.881-885
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• 2001

Kinetics and mechanisms of intermediate phases formation in $Ba(Mg_{1/3}Ta_{2/3})O_3$, obtained by a solid state reaction were studied. $Ba{Ta_2}{O_6}$ and ${Ba_4}{Ta_2}{O_9}$ as intermediate products were first formed at $700^{\circ}C$. $Ba(Mg_{1/3}Ta_{2/3})O_3$ was appeared at $800^{\circ}C$. Several reactions take place on heating process. $Ba{Ta_2}{O_6}$ is found at the first stage of the reaction, and then $Ba{Ta_2}{O_6}$ or ${Ba_4}{Ta_2}{O_9}$ react with MgO to form $Ba(Mg_{1/3}Ta_{2/3})O_3$. The reaction of $Ba(Mg_{1/3}Ta_{2/3})O_3$ formation does not complete until fired at $1350^{\circ}C$ for 60 min. The kinetics of solid-state reaction between powdered reactants was controlled by diffusion mechanism, and can be explained by the Jander's model for three-dimensional diffusion.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.114-114
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.113-113
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• 1993

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.242-245
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• 1996

The microstructure of $Ba (Zn_{1/3}Ta_{2/3})O_3$ (BZT) was investigated using X-ray diffractometry(XRD) and transmission electron microscopy (TEM). $Ba_{0.5}TaO_3$ and $Ba_3TaO_{5.5}$ (BT) phasses were observed on the surface of the sintered specimen by XRD. Furthermore, a new type of ordering along the [110] direction was found in sintered specimen by the XRD and TEM analysis. The wavelength of ordering was 0.9 nm which is three times larger than the interplanar distance of (110) plane and new type of ordering is considered to be a result of Zn vacancy ordering. The creation of Zn vacancies and formation of BT phases are attributed to the evaporation of volatile ZnO. A new mechanism for ZnO loss is suggested. In this mechanism, only Zn vacancies are created only when the amount of ZnO loss is small and as the amount of ZnO loss increases, BT phases are formed at the same time. A new unit cell of ordered structure is suggested as the superlattics containing three BZT unit cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.197-201
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• 2001

The microwave dielectric properties of (1-x)Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3)O$_3$(x=0.25~0.5) ceramics depending on the Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf$_{0}$=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Qxf$_{0}$=75,325GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.EX>.

• Korean Journal of Mineralogy and Petrology
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• v.36 no.3
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• pp.185-197
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• 2023

The Gubong Au-Ag deposit consists of eight lens-shaped quartz veins. These veins have filled fractures along fault zones within Precambrian metasedimentary rock. This has been one of the largest deposits in Korea, and is geologically a mix of orogenic-type and intrusion-related types. Korea Mining Promotion Corporation drilled into a quartz vein (referred to as the No. 6 vein) with a width of 0.9 m and a grade of 27.9 g/t Au at a depth of -728 ML by drilling (No. 90-12) in the southern site of the deposit, To further investigate the potential redevelopment of the No. 6 vein, another drilling (No. 04-1) was carried out in 2004. In 2004, samples (wallrock, wallrock alteration and quartz vein) were collected from the No. 04-1 drilling core site to study the occurrence and chemical composition of Ti-bearing minerals (ilmenite, rutile). Rutile from mineralized zone at a depth of -275 ML occur minerals including K-feldspar, biotite, quartz, calcite, chlorite, pyrite in wallrock alteration zone. Ilmenite and rutile from ore vein (No. 6 vein) at a depth of -779 ML occur minerals including white mica, chlorite, apatite, zircon, quartz, calcite, pyrrhotite, pyrite in wallrock alteration zone and quartz vein. Based on mineral assemblage, rutile was formed by hydrothermal alteration (chloritization) of Ti-rich biotite in the wallrock. Chemical composition of ilmenite has maximum values of 0.09 wt.% (HfO₂), 0.39 wt.% (V₂O₃) and 0.54 wt.% (BaO). Comparing the chemical composition of rutile at a depth -275 ML and -779 ML, Rutile at a depth of -779 ML is higher contents (WO₃, FeO and BaO) than rutile at a depth of -275 ML. The substitutions of rutile at a depth of -275 ML and -779 ML are as followed : rutile at a depth of -275 ML Ba²⁺ + Al³⁺ + Hf⁴⁺ + (Nb⁵⁺, Ta⁵⁺) ↔ 3Ti⁴⁺ + Fe²⁺, 2V⁴⁺ + (W⁵⁺, Ta⁵⁺, Nb⁵⁺) ↔ 2Ti⁴⁺ + Al³⁺ + (Fe²⁺, Ba²⁺), Al³⁺ + V⁴⁺+ (Nb⁵⁺, Ta⁵⁺) ↔ 2Ti⁴⁺ + 2Fe²⁺, rutile at a depth of -779 ML 2 (Fe²⁺, Ba²⁺) + Al³⁺ + (W⁵⁺, Nb⁵⁺, Ta⁵⁺) ↔ 2Ti⁴⁺ + (V⁴⁺, Hf⁴⁺), Fe²⁺ + Al³⁺ + Hf ⁴⁺ + (W⁵⁺, Nb⁵⁺, Ta⁵⁺) ↔ 2Ti⁴⁺ + V⁴⁺ + Ba²⁺, respectively. Based on these data and chemical composition of rutiles from orogenic-type deposits, rutiles from Gubong deposit was formed in a relatively oxidizing environment than the rutile from orogenictype deposits (Unsan deposit, Kori Kollo deposit, Big Bell deposit, Meguma gold-bearing quartz vein).

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.399-402
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• 2019

The phase evolution, microstructure, and microwave dielectric properties of (Ba_1-xNa_x)(Mg_0.5-2xY_2xW_0.5-xTa_x)O₃ (0 ≤ x ≤ 0.05) ceramics were investigated. All compositions exhibited a 1:1 ordered perovskite structure. As the value of x increased, the dielectric constant (ε_r) exhibited a tendency to increase slightly. The quality factor reached the maximum value at x = 0.01. The temperature coefficient of resonant frequency (τ_f) increased from -19.32 ppm/℃ to -5.64 ppm/℃ in the positive direction as x increased. The dielectric constant (ε_r), quality factor (Q × f₀), and temperature coefficient of resonant frequency (τ_f) of the composition x = 0.05, i.e., (Ba_0.95Na_0.05)(Mg_0.4Y_0.1W_0.45Ta_0.05)O₃ were 19.9, 128,553 GHz, and -5.6 ppm/℃, respectively.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.489-494
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• 2018

Lead free $(1-x)(0.675BiFeO_3-0.325BaTiO_3)-xLiTaO_3$ (BFBTLT, x = 0, 0.01, 0.02, and 0.03, with 0.6 mol% $MnO_2$ and 0.4 mol% CuO) were prepared by a solid state reaction method, followed by air quenching and their crystalline phase, morphology, dielectric, ferroelectric and piezoelectric properties were explored. An X-ray diffraction study indicates that lithium (Li) and tantalum (Ta) were fully incorporated in the BFBT materials with the absence of any secondary phases. Dense ceramic samples (> 92 %) with a wide range of grain sizes from $3.70{\mu}m$ to $1.82{\mu}m$ were obtained in the selected compositions ($0{\leq}x{\leq}0.03$) of BFBTLT system. The maximum temperatures ($T_{max}$) were mostly higher than $420^{\circ}C$ in the studied composition range. The maximum values of maximum polarization ($P_{max}{\approx}31.01{\mu}C/cm^2$), remnant polarization ($P_{rem}{\approx}22.82{\mu}C/cm^2$) and static piezoelectric constant ($d_{33}{\approx}145pC/N$) were obtained at BFBT-0.01LT composition with 0.6 mol% $MnO_2$ and 0.4 mol% CuO. This study demonstrates that the high $T_{max}$ and $d_{33}$ for BFBTLT ceramics are favorable for industrial applications.