• 한국재료학회지
• /
• 제13권8호
• /
• pp.497-502
• /
• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

• 한국세라믹학회지
• /
• 제30권6호
• /
• pp.457-468
• /
• 1993

In oxide matrix-SiC(W) composites, instability and glassy phase formation due to oxidation at the high temperature and the diffusion of Si, respectively, cause brittle fracture and low reliability for ceramic materials. The mode of contribution in each mechanisms induced by matrix-whisker debonding, varies with the morphology of matrix-whisker interfaces. This work has described the dispersion behaviours and stabilization mechanisms in slip systems, and multiple toughening mechanisms by dint of two second phase different from each other when spherical ZrO2 and chemically stable Al2O3(W) is respectively added in Al2O3 matrix. To obtain complexshaped components, slip casted bodies were sintered at 1$600^{\circ}C$, 2hrs up to 98~99% R.D.. Multiple toughening mechanisms in comparison with theories reported until now will be discussed as a result of the phase analysis of ZrO2 by athermal behaviours and microstructural characterizations as well as measured mechanical properties.

• 한국세라믹학회지
• /
• 제30권7호
• /
• pp.571-577
• /
• 1993

The effect of $\alpha$-Al2O3 seeding on preparation of zirconia/alumina gel fragment prepared by sol-gel processing was characterized through XRD, SEM, TG/DTA and IR analysis. Aluminum isopropoxide and zirconium butoxide were used as starting materials. $\alpha$-Al2O3 seeding restrained grain growth of alumina and zirconia, and decreased tetragonal to monoclinic phase transformation of zirconia on cooling. Therefore, fine zirconia-toughened alumina composite having the relative sintered density of about 98% of theoretical at 140$0^{\circ}C$ for 2h could be obtained.

• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 1996년도 추계학술발표회논문집(1)
• /
• pp.145-150
• /
• 1996

약 30$0^{\circ}C$, 160 kg/$cm^2$의 원자로냉각재계통에서 사용이 가능한 $^{60}$Co 제거용 고온흡착제를 얻기 위하여, ZrO$_2$를 zirconyl nitrate를 출발물질로 하여 졸-겔법으로, aluminum isopropoxide를 출발 물질로 하여 A1$_2$O$_3$를, aluminum isopropoxide와 titanium tetraisopropoxide를 출발물질로하여 TiO$_2$-A1$_2$O$_3$를, aluminum isopropoxide와 zirconium propoxide를 출발물질로 하여 ZrO$_2$-A1$_2$O$_3$를 금속알콕사이드 가수분해법으로 제조하였다. 제조한 흡착제는 600~140$0^{\circ}C$의 온도로 하소 하였으며, 결정전이, 열적특성, 비표면적 등의 물성변화를 알아보기 위하여 X선회절, 적외선분광분석, 열분석, 전자현미경 관찰, BET 비표면적 등을 측정하였다. 또한, 고온수에서 이들 흡착제의 Co$^{2＋}$ 흡착특성을 autoclave를 이용한 회분식 흡착실험으로 알아보았다. 이들 흡착제 제조시 하소온도에 따른 Co$^{2＋}$ 흡착량, $Al_2$O$_3$ 흡착제 제조시 pH 변화에 따른 Co$^{2＋}$ 흡착량과 TiO$_2$-A1$_2$O$_3$ 흡착제 제조시 TiO$_2$ 함량에 따른 Co$^{2＋}$ 흡착량과 25$0^{\circ}C$의 고온에서 ZrO$_2$와 $Al_2$O$_3$의 표면에 생성된 코발트 화합물을 XPS와 EPMA로 부터 확인하였다.

• 한국재료학회지
• /
• 제18권7호
• /
• pp.352-356
• /
• 2008

Effect The effect of sintering additives ($SiO_2$, $Al_2O_3$, Clay) on the mechanical characteristics of sintered zircon was investigated. 1 vol% of additives in zircon powder was was sintered at $120{\sim}1500^{\circ}C$, the mechanical characteristics were measured, and microstructure analysis were was conducted. $Al_2O_3$ and clay additions increase the formation of monoclinic and tetragonal-$ZrO_2$ formation. An addition of SiO2 addition suppressed the formation of tetragonal-$ZrO_2$ formation., The A specimen sintered at $1400^{\circ}C$ showed the a density of $4.05\;g/cm^3$ and the a microhardness of 1120 HV, respectively.

• 한국세라믹학회지
• /
• 제40권2호
• /
• pp.109-112
• /
• 2003

The grain-boundary microcracking materials in the system $Al_2$TiO$_{5}$ -ZrTiO$_4$(ZAT) is influenced by the thermal expansion anisotropy. The range of ZAT compositions investigated had showed very low thermal expansions of 0.3~1.3$\times$10$^{-6}$ K loin compared to 8.29$\times$10$^{6}$ K of pure ZrTiO$_4$and 0.68$\times$10$^{6}$ K of polycrystalline $Al_2$TiO$_{5}$ , respectively, compared with the theoretical thermal expansion coefficient for a single crystal of $Al_2$TiO$_{5}$ , 9.70$\times$10$^{6}$ K. The low thermal expansion and microcraking temperature are apparently due to a combination of thermal contraction and expansion caused by the large thermal expansion anisotropy of the crystal a ies of the $Al_2$TiO$_{5}$ phase.

• The Korean Journal of Ceramics
• /
• 제3권4호
• /
• pp.253-256
• /
• 1997

Epitaxially grown Pb(Zr, Ti)O$_3$thin films were prepared on LaAlO$_3$substrates by the dipping pyrolysis process using metal naphthenates as starting materials Homogeneous Pb-Zr-Ti solutions with toluene were spin-coated onto the substrates and pyrolyzed at 50$0^{\circ}C$ Highly oriented Pb(Zr, Ti)O$_3$films confirmed by X-ray diffraction $\theta$-2$\theta$ scans were obtained by heat-treated at 75$0^{\circ}C$ in air The X-ray pole-figure analysis and reciprocal-space mapping of the resulting 0.6$\mu\textrm{m}$ films showed that the thin films comprising the c-axis oriented tetragonal phase have an epitaxial relationship with the LaAlO$_3$substrates.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권9호
• /
• pp.434-441
• /
• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
• /
• pp.157-160
• /
• 2001

We have investigated the Dielectric and Piezoelectric properties of $xPb(R_{1/2}Ta_{1/2})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$ (R=Al,Y) solid solutions in which R ions are substituted for Al and Y ions. The maximum value of electromechanical coupling factor kp of 55% and 51% were obtained at the composition of 5mol% PAT and 5mol% PYT. However mechanical quality factor$(Q_m)$ had a minimum value of 44 and 69 at the composition of 5mol% PAT and 5mol% PYT. Also, the maximum value of piezoelectctric constant of $d_{33}(329[pC/N])$ and $d_{33}(310[pC/N])$ were obtained at the composition of 5mol% PAT and 5mol% PYT.

• 한국세라믹학회지
• /
• 제38권1호
• /
• pp.56-60
• /
• 2001

90.24 mol% ZrO$_2$-5.31 mol% $Y_2$O$_3$-4.45 mol% Nb$_2$O$_{5}$ 조성의 (Y,Nb)-TZP와 (Y,Nb)-TZP/Al$_2$O$_3$복합체를 155$0^{\circ}C$~1$600^{\circ}C$에서 1~2시간 소결하여 제조하였다. 시편의 결함에 대한 저항성을 조사하기 위하여 R-curve, Weibull modulus, slow crack growth 변수 등을 조사하였다. 실험결과, (Y,Nb)-TZP와 (Y,Nb)-TZP/Al$_2$O$_3$복합체 모두 상용 3Y-TZP 보다 우수한 결함 저항성이 관찰되었다. (Y,Nb)-TZP/Al$_2$O$_3$복합체의 결함 저항성은 $Al_2$O$_3$첨가에 의한 결정립 가교 인화, 분산강화, R-curve 효과에 의한 것으로 추정된다.