• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.179-186
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• 2019

In this study, we investigated the structural properties of $Ga_2O_3$ thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. $Ga_2O_3$ thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of $Ga_2O_3$ changed from ${\varepsilon}$-phase to ${\beta}$-phase depending on the growth temperature. The crystal structure of ${\varepsilon}-Ga_2O_3$ was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ${\varepsilon}-Ga_2O_3$ showed much better photocurrent characteristics in the 266 nm UV range than in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.334-337
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• 2002

In this study, the microstructure, dielectric and piezoelectric properties of $0.15Pb(Ni_{1/3}Nb_{2/3})O_3-0.85(PbZr_{0.5}Ti_{0.5})O_3$(0.15PNN-0.85PZT) ceramics having compositions near the morphotropic phase boundary(MPB) was investigated with respect to the variation of $Y_2O_3$ and $Ga_2O_3$ addition amount. The dielectric properties increased and piezoelectric properties decreased with increasing the amount of $Ga_2O_3$. The solubility limit of $Y_2O_3$ is 0.5mol% in this system. The electro-mechanical coupling factor$(K_p)$ and dielectric constant(${\varepsilon}_r$) were 58.6% and 1755 when the amount of $Y_2O_3$ are 0.5mol%.