• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.60-60
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• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.739-746
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• 2005

When we design a binary phase holographic optical low-pass filter (HOLF), the phase difference is generally set to be $\pi$ to optimize the diffraction efficiency. However, the phase difference of real HOLF mostly deviate from $\pi$ by the error in the fabrication process. The deviation causes the (0,0)-th order diffracted beam to increase, which results In raising the diffraction efficiency. To study the effects of the phase error on the performance of HOLF, we calculated the MTF of HOLF for various phase differences. The results show that the phase error of 10 $\%$ makes little change in the filtering characteristics of HOLF. Considering the filtering by lens and CCD, the effects of the phase error becomes much smaller. To confirm it experimentally, we fabricated HOLFs for various phase differences. After installing it in a digital camera, we take picture of test targets and observe the Moire fringes and the resolution. The results agree with our prediction.

• 대한기계학회논문집
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• 제11권6호
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• pp.923-934
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• 1987

본 연구에서는 유연한 로봇 조각기를 허브가 있는 첨단질량이 부착된 유연한 외팔보로 모델링하고 Hamilton의 원리에 의하여 유도된 운동방정식을 Galerkin의 모우 드 합 방접을 이용하여 유한차원화하여 상태방정식으로 표시하였다. 계를 제어 모우 드부(controlled mode part)와 잔류 모우드부(residual mode part)로 나누어 제어 모 우드부에 대해 최적제어 이론을 도입하여 귀환계수(feedback ccefficient)를 구하였으 며 측정이 불가능한 상태변수(inaccessible state)를 근사적으로 추정하기 위하여 Lu- enberger 관측기가 사용되었다.2차 성능계수(quadratic performance index)내의 입 력에 대한 가중치의 변화에 따른 제어효과 및 계의 여러 모우드중 중요 모우드만 제어 하는 제어기를 사용함에 따른 Spillover 효과가 계의 제어효과에 미치는 영향을 시뮬 레이션을 통하여 고찰하였으며, 또한 실험을 통하여 이론의 타당성을 검토하였다.

• 전자공학회논문지A
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• 제31A권9호
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• pp.128-138
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• 1994

In 1.55.mu.m DFB lasers with two non-AR mirrors, I have analyzed the effect of the sturctures of indes and/or gain gratings and mirror positions on the threshold gains, the lasing frequencies, and the beam profiles in longitudinal direction of lasers. I have obtained the optimum condition of static characteristics that ${\Delta}{\Omega}$(the phase difference betweeen index grating and gain grating is 3${\pi}$/4, $({\kappa}L)_{i}$=4~6 in case of $({\kappa}L)_{i}$=0.9 and $({\kappa}L)_{i}$=3~5 in case of $({\kappa}L)_{i}$=0.7. The modal selectivity and intensity uniformity of this optimum condition are 2~2.5 times better than those of the gain-coupled DFB lasers ${\Delta}{\Omega}$=0). The gain-coupled DFB lasers${\Delta}{\Omega}$=0) have 10$^{10) times better modal selectivity and intensity uniformity than the loss-coupled DFB lasers(TEX>${\Delta}{\Omega}$=${\pi}$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.60-61
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• 2006

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. Results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLEO) applications.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1362-1369
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• 2018

A method aimed at improving the beam-wave interaction efficiency by changing the coupling slot configuration has been proposed in the study of extended interaction oscillators (EIOs). The dispersion characteristics, coupling coefficient and interaction impedance of the high-frequency structure based on different types of coupling slots have been investigated. Four types of coupled cavity structures with different layouts of the coupling slots have been compared to improve the beam-wave interaction efficiency, so as to analyze the beam-wave interaction and practical applications. In order to determine the improvement of the coupling slot to a coupled cavity circuit in an EIO, we designed four nine-gap EIOs based on the coupled cavity structure with different coupling slot configurations. With different operating frequencies and voltages takes into consideration, beam voltages from 27 to 33 kV have been simulated to achieve the best beam-wave interaction efficiency so that the EIOs are able to work in the $2{\pi}$ mode. The influence of the Rb and the ds on the output power is also taken into consideration. The Rb is the radius of the electron beam, and the ds is the width of the coupling slot. The simulation results indicate that a single-slot-type EIO has the best beam-wave interaction efficiency. Its maximum output power is 2.8 kW and the efficiency is 18% when the operating voltage is 31 kV and electric current is 0.5 A. The output powers of these four EIOs that were designed for comparison are not less than 1.7 kW. The improved coupling-slot configurations enables the extended interaction oscillator to meet the different engineering requirements better.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• 한국산학기술학회논문지
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• 제18권1호
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• pp.709-714
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• 2017

다리 혹은 건물과 같은 구조물들은 그들의 안전상태를 진단하기 위하여 지속적으로 점검할 필요가 있다. 그러나 사람이 이러한 구조물의 모든 지점을 직접적으로 접근하여 점검해야 하는 치명적인 어려움이 있다. 이러한 어려움을 극복하기 위하여 오늘날에는 WSN(Wireless Sensor Node)를 이용한 SHM(Structural Health Monitoring)에 대한 많은 연구가 활발히 이루어지고 있다. 본 논문에서는 WSN을 이용한 SHM에서 보다 정밀한 점검을 위하여 실시간 처리를 제공하는 Xenomai의 성능을 기존 리눅스 커널과 실험적으로 비교 평가하였다. 이를 위하여 상용 임베디드 보드인 라즈베리 파이(Raspberry Pi) 보드의 기존 리눅스 커널에 Xenomai를 패치 시키고, 캔틸레버 빔(cantilever beam)의 고유 주파수(natural frequency)를 분석하기 위하여 가속도 센서로부터 z-축 진동 데이터를 주기적으로 읽어 들이는 태스크를 구현하였다. 동일한 방법으로 기존 리눅스 커널에서 데이터를 측정한 후, Smart Office Analyzer를 이용하여 캔틸레버 빔의 고유 주파수를 분석하였다. 마지막으로, WSN을 위한 Xenomai의 타당성을 검토하기 위하여 가속도 센서의 z-축 진동 데이터를 유선으로 측정하여 동일한 방법으로 비교 분석하였다.

• Journal of the Optical Society of Korea
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• 제13권2호
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• pp.245-250
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• 2009

We propose a digital holographic interference analysis method based on a 2-frame phase-shifting technique for measuring an optical mirror surface. The technique using 2-frame phase-shifting digital interferometry is more efficient than multi-frame phase-shifting techniques because the 2-frame method has the advantage of a reduced number of interferograms, and then takes less time to acquire the wanted topography information from interferograms. In this measurement system, 2-frame phase-shifting digital interferograms are acquired by moving the reference flat mirror surface, which is attached to a piezoelectric transducer, with phase step of 0 or $\pi$/2 in the reference beam path. The measurements are recorded on a CCD detector. The optical interferometry is designed on the basis of polarization characteristics of a polarizing beam splitter. Therefore the noise from outside turbulence can be decreased. The proposed 2-frame algorithm uses the relative phase difference of the neighbor pixels. The experiment has been carried out on an optical mirror which flatness is less than $\lambda$/4. The measurement of the optical mirror surface topography using 2-frame phase-shifting interferometry shows that the peak-to-peak value is calculated to be about $0.1779{\mu}m$, the root-mean-square value is about $0.034{\mu}m$. Thus, the proposed method is expected to be used in nondestructive testing of optical components.