• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.314-315
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• 2012

최근들어 반도체 및 디스플레이 소자의 구조가 복잡해짐에 따라 다층 박막 증착에 대한 중요성이 날로 증가하고 있다. 본 연구에서는 다층 박막을 효율적으로 증착하기 위해 회전이 가능한 육각건을 개발하였고, 이를 이용하여 에너지 절약형 단열 유리 증착 공정을 구현 하였다. 개발된 회전형 육각건은 기존 플래너형 스퍼터링 건의 확장형으로서 최대 6개의 물질을 하나의 챔버에서 증착이 가능하도록 구성되었다. 기존 공정의 경우 서로 다른 물질 증착을 위해서는 각각의 챔버가 필요한 반면, 회전형 육각건을 이용할 경우 하나의 챔버에서 공정을 진행할 수 있어 원가 절감이 가능하다. Fig. 1은 개발된 회전형 육각건의 모식도로서, 스퍼터링 타겟이 장착 가능한 건과, 회전부로 구성되어 있다. 이를 이용하여 투명전극-금속-투명전극-금속-절연체로 구성되어 있는 에너지 절약형 단열 유리용 다층 박막 증착 공정을 개발하였다. 이때 알루미늄이 도핑된 ZnO (AZO)는 RF 마그네트론 스퍼터로, 금속 박막은 DC 스퍼터, $SiO_2$ 및 SiN과 같은 절연 박막은 $O_2$와 $N_2$ 분위기에서 반응성 RF 스퍼터로 각각 증착하였다. Base pressure는 $10^{-7}$ torr였으며, 증착 시 공정 압력은 1~3 mTorr로 조정하였다. 증착 균일도 향상을 위해 20 rpm의 속도로 기판을 회전시켰다. Fig. 2(a)는 ZnO-Ag-ZnO 구조로 이루어진 다층 박막의 단면을 관찰한 투과전자 현미경 사진으로 각 층간의 계면이 뚜렷하게 나타남을 확인할 수 있으며, 각 층간의 intermixing 현상이 발생하지 않음을 확인 가능하다. 이를 보완하기 위해 Fig. 2(b)에서 보는 바와 같이 XPS를 이용하여 depth profile을 측정하였다. 각 층에서 서로 다른 물질이 발견되는 현상, 즉 교차 오염이 발생함에 따라 나타나는 intermixing 없이 거의 순수한 형태의 ZnO, Ag 박막 성분이 검출되었다. 이는 6개의 서로 다른 물질이 장착된 회전형 육각건을 이용하여 고 품질의 다층 박막 증착이 가능함을 제시하는 결과이다. 증착된 다층 박막의 균일도는 3.8%, 가시광선 영역에서 80% 이상의 투과도, 면저항 값은 3 ${\Omega}/{\Box}$ 이하를 보임으로서 에너지 절약형 단열 유리로서의 사양을 만족시키는 결과를 제시하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.565-568
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• 2003

2세대 초전도 선재로 알려져 있는 $YBa_2Cu_3O_{7-\delta}$ coated conductor는 금속모재/완충층/초전도층/보호층의 구조를 가진다. 2개 이상의 산화물 다층 박막으로 이루어진 완충층은 금속기판의 집합조직을 초전도층까지 전달하는 역할, 금속기판의 금속이 초전도층으로 확산되어 초전도층의 전기적 특성을 열화시키는 것을 막아주는 확산장벽으로의 역할 등을 수행한다. 1차 완충층은 금속기판의 집합조직을 유지하여야하며, 금속기판의 산화를 방지하면서 증착 되어야 한다. coated conductor 제조를 위한 첫 단계로 Pulsed Laser Deposition법을 이용하여 cube texture된 Ni 기판 위에 $Y_2O_3$ 박막을 증착 하였다. 최적의 증착 조건을 찾기 위해 증착 챔버의 산소 및 $H_2/Ar$ 혼합가스 분압과 기판온도를 변화시키면서 증착 하였다. $Y_2O_3$층의 (100) 집합조직은 기판온도 $600{\sim}700^{\circ}C$와 산소 분압 $0.01{\sim}0.1mTorr$에서 증착된 Y2O3 박막에서 금속기판과 유사한 집합조직을 얻을 수 있었다. 최적의 증착 조건에서 $Y_2O_3$ (222) ${\Phi}-scan$의 full width at half maximum (fwhm)이 $11^{\circ}$이고 (400) ${\omega}-scan$ fwhm은 $6^{\circ}$이었다.

• Journal of Nutrition and Health
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• v.23 no.1
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• pp.1-10
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• 1990

This study was designed to investigate the effect of supplementation of fish oil on serum lipid in young healthy females. Eighteen female college students were divided into 3 groups. Each group fed a typical Korean diet supplemented with 15g, 12g and 9g of fish oil respectively for 1 week. Blood samples were obtained 4 times before supplementation, immediatly after supplementation, 1 week after stopping supplementation and 3 week after stopping supplementation. After 6 week break, the doses of fish oil were interchanged among 3 groups and the experiment was repeated to reduce interindivisual variation. The level of total cholesterol(TC), triglyceride(TG), lipoprotein, high density lipoprotein(HDL)-cholesterol, low density lipoprotein(LDL)-cholesterol in the serum samples were determined immediately after stopping supplementation and then the value compared with those of the before supplementation period. The results obtained are summarised as follows; The serum TC levels decreased significatly(p<0.01) immediately after supplementation of fish oil and 1 week after stopping supplementation. The serum TG levels also decreased significantly(p<0.05) immediately after supplementation of fish oil. The HDL-cholesterol levels increased significantly(p<0.05) at 2 week and 3 weeks after stopping supplementation of fish oil in the 12g and the 15g supplementation groups. The LDL-cholesterol levels decreased significantly(p<0.05) immediately after and 1 week after stopping supplementation of fish oil. The ratio of HDL-C to TC increased significantly(p<0.01) and the ratio of LDL-C to HDL-C, and index of artherogenesity, decreased significantly(p<0.05).

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.19 no.4
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• pp.347-355
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• 1986

The Sonakdong river is very important water source not only for agricultural water of Kimhae field but also for fishery water. Recently the middle and lower areas of the river have the tendency to be heavily contaminated by domestic sewage and agricultural chemicals. Fifty six water samples were collected from 8 stations from July to December in 1985 for the experiment (Fig. 1). To evaluate the water quality, pH, water temperature, electrical conductivity, chloride ion, nutrients ($NO^{-}_{2}-N,\;NO^{-}_{3}-N,\;NH^{+}_{4}-N,\;PO^{3-}_{4}-P,\;SiO_2-Si$), total coliform, fecal coliform, and fecal streptococcus were determined. Range and mean value of the samples were as follows; pH $6.3{\sim}9.4$, 7.91; water temperature $6.1{\sim}34.8^{\circ}C,\;23.88^{\circ}C$; electrical conductivity (from St. A to G) $1.575{\times}10^2{\sim}30.50{\times}10^2{\mu}{\mho}/cm,\;6.57{\times}10^2{\mu}{\mho}/cm$; chloride ion $23.5{\sim}14,300mg/l$, 770.0mg/l; nitrite-nitrogen $0.007{\sim}0.110mg/l$, 0.053mg/l; nitrate-nitrogen $0.001{\sim}1.638mg/l$, 0.649 mg/l; ammonia-nitrogen $0.017{\sim}4.200mg/l$, 0.497mg/l; phosphate-phoshorus $0.011{\sim}0.281mg/l$, 0.086mg/l; and silicate-silicious $2.4{\sim}6.5mg/l$, 4.43mg/l. Electrical conductivity and chloride ion of the station F(Chomanpo) were $2.676{\times}10^2{\mu}{\Omega}cm$ and 123.99mg/l which were lower than those of others. Among the analyzed nutrients, silicate-silicious concentration was the highest through all the samples. The bacterial density of the samples ranged $36{\sim}110,000/100ml$ for total coliform, $15{\sim}46,000/100ml$ for fecal coliform and $3.6{\sim}15,000/100ml$ for fecal streptococcus. The range and the mean of the TC/FC ratio were $3.0{\sim}9.6$, 5.51 and those of the FC/FS ratio were $1.1{\sim}9.2$, 6.19, respectively. On the other hand, fecal coliform was not detected in about $78\%$ of the water samples examined. Composition of coliform was $52\%$ Escherichia coli group, $3\%$ Citrobacter freundii group, $13\%$ Enterobacter aerogenes group and $31\%$ others.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1602-1608
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• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.796-803
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• 1997

The PVT and $^2H$-NMR characteristic of main-chain dimer liquid crystals having structures such as ${\alpha}$, ${\omega}$-bis[4,4'-cyanobiphenyl) oxy] alkane(CBA-10) were studied. In this work, V-T curves obtained from isobaris measurements on various pressures, volume changes were observed at the nematic-isotropic and nematic-crystal phase transition. The volume changes at the transition exhibit slight odd-even effect with respect to the number of methylene unit n. The values of the$({\Delta}S_{tr})_V$ obtained at the NI transition for CBA-10 was $12.6J/mol{\cdot}K$. The values of $({\Delta}S_{CN})_V$ for the CN transition was estimated on the basis of DSC data : $65.3J/mol{\cdot}K$. For both transition, it was found that the correction about the volume change is significant, ranging from 40 to 60% of the total transition entropy observed under constant pressure. The RIS analysis of the spectra was performed so as to elucidate the conformational characteristics of the spacer in the nematic phase. The conformational entropy changes at both CN and NI interphases were estimated on the basis of the nematic conformations taken from the conformation map as well as those derived from the simulation. The estimated conformational entropy change values were then compared with the corresponding constant-volume entropies obtained from PVT measurements. The correspondence between both entropy values was found to be quite good in consideration of the uncertainties involved in both experiment and calculations.