• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.89-94
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• 2006

A compact microstrip band-selective filter for ultra-wideband(UWB) radio system is proposed. The filter combines the traditional short-circuited stub highpass filter and coupled resonator band-stop filter on both sides of the mitered 50-ohm microstrip line. To realize the pseudo-highpass filtering characteristic over UWB frequency band(3.1 GHz to 10.6 GHz), a distributed highpass filter scheme is adopted. Three coupled resonators are utilized to obtain the band stop function at the desired frequency band. By meandering the coupled resonators, there is $29\;\%$ size reduction in footprint compared to the traditional band-stop filter using L-shaped resonators. The measured results show that the filter has a wide passband of $146.7\;\%$(2.1 GHz to 10.15 GHz) with low insertion loss and the stop band of $10.04\;\%$(5.2 GHz to 5.75 GHz) for 3-dB bandwidth. The measured group delay is less than 0.7 ns within the passband except the rejection band.

• Korean Journal of Food Science and Technology
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• v.36 no.4
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• pp.531-536
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• 2004

Synthesis conditions were optimized using response surface methodology for producing structured lipids (SL) by interesterification of DHA-enriched algae oil derived from microalgae, Schizochytrium sp. and corn oil. Reaction was performed fer 24 hr at $55^{\circ}C$ catalyzed by immobilized lipase from Rhizomucor miehei (RM IM) in shaking water bath. Major fatty acids of SL were palmitic (21.70 mol%), oleic (20.20 mol%), and linoleic (27.34 mol%) acids, and DHA (15.06 mol%). To separate newly synthesized SL-triglycerides (TG) species, HPLC with evaporative light scatting detector (ELSD) was used. Production conditions were optimized using central composite design with reaction temperature $(35-75^{\circ}C,\;X_1)$, reaction time $(2-42\;hr,\;X_2)$, and enzyme concentration $(2-14%,\;X_3)$ as variables. When variables were $70.28^{\circ}C\;(X_1),\;28.74\;hr\;(X_2),\;and\;11.30%\;(X_3)$, maximum content of selected three peaks of synthesized SL-TG species was predicted as 6.97 area%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Korean Journal of Community Nutrition
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• v.2 no.4
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• pp.477-485
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• 1997

This study was conducted to determine the effect of large amounts of whole cow's milk intake on serum levels of minerals and lipids. Subjects were normal infants who were brought to the pediatric hospital for vaccination at the age of 7-26 months after birth, living in Eumsung-Choongbuk area. The serum concentrations of the imnerals(calcium, phosphorus, magnesium, iron, zinc and copper), lipids and fatty acids composition were analyzed in 38 infants which consumed large amount of whole cow's milk(over 700ml/day). The results obtained are summarized as follows : 1) The mean levels of calcium, phosphorus and magnesium in the serum of the total subjects were 7.56$\pm$0.51mg/dl, 11.12$\pm$0.72mg/dl and 1.62$\pm$0.13mg/dl respectively. The serum concentrations of iron, zinc and copper in total subjects averaged 72.42$\pm$1.62$\mu\textrm{g}$/dl, 76.29$\pm$3. 62$\mu\textrm{g}$/dl and 86.44$\pm$2.98$\mu\textrm{g}$/dl respectively. 2) The mean serum concentrations of triglyceride, total cholesterol, HDL and LDL in the total number of subjects were 96.84$\pm$9.22mg/dl, 133.45$\pm$6.30mg/dl, 32.79$\pm$1.77mg/dl and 81.29$\pm$4.81mg/dl respectively. 3) The average percentages of SFA, MUFA and PUFA inth total serum fatty acids were 38.98$\pm$2.42$\%$, 25.82$\pm$0.98$\%$ and 37.30$\pm$1.09$\%$ respectively and the mean$w6/w3$fatty acids ratio was 13.48. In general, the levels of serum minerals and $\omega$3 fatty acid composition in the subjects of this study, who were whole cow's milk fed infants were lower than those reported in breast milk or formula fed infants. Therefore, the intake of large amount of whole cow's milk in the weani ng period should be controlled and adequate for the infant's nutritional status. (Korean J Community 2(4) : 477-485, 1997)

• Journal of Life Science
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• v.28 no.5
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• pp.547-554
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• 2018

Flaxseed (Linum usitatissimum L.), also called linseed and one of the raw materials for making linen, is rich in omega-3 fatty acids, vegetable estrogen, ${\alpha}$-linolenic acid, and dietary fiber. Studies on flaxseed have reported various additional effects, such as the inhibition of cholesterol, blood clotting, and tumor growth. In this study, we investigated the functional components of flaxseed fermented with lactic-acid bacteria. Lactic-acid bacteria was inoculated into heat-treated (roasted) flaxseed and fermented at $37^{\circ}C$ for 72 hr. The fermented flaxseed was extracted with 70% ethanol and the antioxidant effect of the fermented extracts according to the lactic-acid bacteria was analyzed. It was confirmed that the total polyphenol contents had expanded by about 1.5-8 times, and the total flavonoid contents had increased around 1.2 times in the case of fermented flaxseed with lactic-acid bacteria compared to non-fermented flaxseed (NFFS). DPPH radical scavenging and superoxide dismutase-like activities had increased around 5.6 and 2.3 times, respectively, in the fermented flaxseed compared to the NFFS at 100 ppm concentration. The study concluded that fermentation of flaxseed with lactic-acid bacteria is possible and that it is effective to increase the antioxidant effects of flaxseed. These results can be applied to the development of improved foods and cosmetic materials.

• The Korean Journal of Physiology and Pharmacology
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• v.3 no.5
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• pp.481-490
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• 1999

To investigate the changes in the responses of vestibular neurons with time during vestibular compensation, the resting activity and dynamic responses of type I and II neurons in the medial vestibular nuclei to sinusoidal angular acceleration were recorded following unilateral labyrinthectomy (ULX) in Sprague-Dawley rats. The unitary extracellular neuronal activity was recorded from the bilateral medial vestibular nuclei with stainless steel microelectrodes of $3{\sim}5\;M{\Omega}$ before ULX, and 6, 24, 48, 72 hours, and 1 week after ULX under pentobarbital sodium anesthesia (30 mg/kg, i.p.). Gain (spikes/s/deg/s) and phase (in degrees) were determined from the neuronal activity induced by sinusoidal head rotation with 0.05, 0.1, 0.2, and 0.4 Hz. The mean resting activity before ULX was $16.7{\pm}8.6$ spikes/s in type I neurons $(n=67,\;M{\pm}SD)$ and $14.5{\pm}8.4$ spikes/s in type II neurons (n=43). The activities of ipsilateral type I and contralateral type II neurons to the lesion side decreased markedly till 24 hr post-op, and a significant difference between ipsilateral and contralateral type I neurons sustained till 24 hr post-op. The gain at 4 different frequencies of sinusoidal rotation was depressed in all neurons till 6 or 24 hr post-op and then increased with time. The rate of decrease in gain was more prominent in ipsilateral type I and contralateral type II neurons immediately after ULX. Although the gain of those neurons increased gradually after 24 hours, it remained below normal levels. The phase was significantly advanced in all neurons following ULX. These results suggest that a depression of activities in ipsilateral type I and contralateral type II neurons is closely related with the occurrence of vestibular symptoms and restoration of activities in those neurons ameliorates the vestibular symptoms.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.