• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.89-93
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• 2014

In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have been investigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surface roughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as the increasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RC and the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/III ratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shaped azimuthal dependence over $360^{\circ}$ angle range was observed for all samples. At V/III ratio = 10, the difference of FWHM of a-plane GaN between $0^{\circ}$ and $90^{\circ}$ was 439 arcsec revealed as the lowest value in the 4 samples.

• Journal of Environmental Science International
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• v.19 no.12
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• pp.1323-1334
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• 2010

The effect of nitric oxide (NO) on antioxidant system and protective mechanism against oxidative stress under UV-B radiation was investigated in leaves of maize (Zea mays L.) seedlings during 3 days growth period. UV-B irradiation caused a decrease of leaf biomass including leaf length, width and weight during growth. Application of NO donor, sodium nitroprusside (SNP), significantly alleviated UV-B stress induced growth suppression. NO donor permitted the survival of more green leaf tissue preventing chlorophyll content reduction and of higher quantum yield for photosystem II than in non-treated controls under UV-B stress, suggesting that NO has protective effect on chloroplast membrane in maize leaves. Flavonoids and anthocyanin, UV-B absorbing compounds, were significantly accumulated in the maize leaves upon UV-B exposure. Moreover, the increase of these compounds was intensified in the NO treated seedlings. UV-B treatment resulted in lipid peroxidation and induced accumulation of hydrogen peroxide ($H_2O_2$) in maize leaves, while NO donor prevented UV-B induced increase in the contents of malondialdehyde (MDA) and $H_2O_2$. These results demonstrate that NO serves as antioxidant agent able to scavenge $H_2O_2$ to protect plant cells from oxidative damage. The activities of two antioxidant enzymes that scavenge reactive oxygen species, catalase (CAT) and ascorbate peroxidase (APX) in maize leaves in the presence of NO donor under UV-B stress were higher than those under UV-B stress alone. Application of 2-(4-carboxyphenyl)-4, 4, 5, 5-tetramethylimidazoline-1-oxyl-3- oxide (PTIO), a specific NO scavenger, to the maize leaves arrested NO donor mediated protective effect on leaf growth, photosynthetic pigment and free radical scavenging activity. However, PTIO had little effect on maize leaves under UV-B stress compared with that of UV-B stress alone. $N^{\omega}$-nitro-L-arginine (LNNA), an inhibitor of nitric oxide synthase (NOS), significantly increased $H_2O_2$ and MDA accumulation and decreased antioxidant enzyme activities in maize leaves under UV-B stress. This demonstrates that NOS inhibitor LNNA has opposite effects on oxidative resistance. From these results it is suggested that NO might act as a signal in activating active oxygen scavenging system that protects plants from oxidative stress induced by UV-B radiation and thus confer UV-B tolerance.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.277-282
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• 2011

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.574-577
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• 2011

In this study, we use the $2.5cm{\times}7.5cm$ soda lime glass as the substrate. We used the ultrasonicator. Glass was dipped in the acetone, methanol and DI water respectively for 10 minutes. Ar(99.99%)gas was used as the sputtering gas. We varied the RF power between 100~175 W with 25 W steps. Base pressure was kept by turbo molecular pump at $3.0{\times}10^{-6}$ torr. Working pressure was kept by injection of Ar gas. ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the RF power. Electrical properties were measured by hall effect methods at room temperature. The resistivity, carrier concentration, and hall mobility of ZnS deposited on glass substrate as a function of sputtering power. It can be seen that as the sputtering power increase from 100 to 175 W, the resistivity of the films on glass decreased significantly from $8.1{\times}10^{-2}$ to $1.2{\times}10^{-3}\;{\Omega}{\cdot}cm$. This behavior could be explained by the effect of the sputtering power on the mobility and carrier concentration. When the RF power increases, the carrier concentration increases slightly while the resistivity decreases significantly. These variation originate from improved crystallinity and enhanced substitutional doping as the sputtering power increases.

• Journal of Physiology & Pathology in Korean Medicine
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• v.27 no.4
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• pp.400-408
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• 2013

This study aimed to investigate the relaxation effects and its underlying mechanisms of Rubus coreanus(RC) extract in contracted rabbit corpus cavernous tissues by phenylephrine(PE) $1{\mu}M$. In order to define the relaxation effects of RC, rabbit corpus cavernous tissues were prepared in $2{\times}2{\times}6mm$ sized strip. The dose-dependent relaxation responses of RC at 0.01-3.0 $mg/m{\ell}$ in contracted strips induced by PE were measured and also observed after endothelial denudation. To analyze the underlying mechanisms of RC-induced relaxation, indomethacin(IM), tetraethylammonium chloride(TEA), $N{\omega}$-nitro-L-arginine (L-NNA), methylene blue(MB) were treated before RC extract infused into precontracted strips induced by PE. To study the effect of RC extract on influx of extracellular $Ca^{2+}$ in corpus cavernous strips, calcium chloride(Ca) 1 mM infused into precontracted strips induced by PE after pretreatment of RC extract in $Ca^{2+}$-free krebs-ringer solution. To investigate cytotoxic activity and nitric oxide(NO) concentration of RC extract on human umbilical vein endothelial cell(HUVEC), cell viability on HUVEC was measured by MTT assay, and NO concentration was measured by Griess reagent system. The cavernous strips were significantly relaxed by RC extract at 1.0 $mg/m{\ell}$, 3.0 $mg/m{\ell}$ and the relaxation responses to RC were inhibited significantly by endothelial disruption. The pretreatment of IM, TEA didn't affect RC extract-induced endothelium-dependent relaxation, but the pretreatment of L-NNA, MB reduced RC extract-induced endothelium-dependent relaxation. When $Ca^{2+}$ was supplied the cavernous strips which were precontracted by PE in a $Ca^{2+}$-free krebs-ringer solution, contraction of strips was increased, but pretreatment of RC inhibited contractile response to $Ca^{2+}$. When RC extract was applicated on HUVEC, NO concentration was increased. Our findings show that RC extract exerts a relaxing effect on corpus cavernosum in part by suppressing influx of extracellular $Ca^{2+}$ through activating the NO-cGMP system.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.31 no.2
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• pp.210-216
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• 1998

Relationship between population group properties and docosahexaenoic acid (DHA) content of the Pacific oyster had been carried out at the Bukman oyster farm near Tongyeong based on the regular monthly sampling from November 1994 through April 1996. DHA content in lipids was least abundant in June and most abundant in November. Minimum DHA content close to 'zero' in lune suggests that much of DHA are being used for maturing and discharging of eggs and sperms, in consideration of the fact that lure is the spawning periods of the oyster. The corelationships among DHA content, mortality, and growth coefficient, have not been recognized. The approximate positive relations have been acknowledged between DHA content and the individual density in times of harvest, and also the individual weight. But it seems that the relaltions between DHA content and the individual weight are not directly related, rather it seems that it is the result from the population density effects caused by the relations between DHA and the number of individuls. But the meaning of the above mentioned relations can not be clearly defined yet.

• Journal of Microbiology and Biotechnology
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• v.23 no.11
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• pp.1509-1518
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• 2013

An agar-degrading bacterium, designated as strain $G7^T$, was isolated from a coastal seawater sample from Gaya Island (Gayado in Korean), Republic of Korea. The isolated strain $G7^T$ is gram-negative, rod shaped, aerobic, non-motile, and non-pigmented. A similarity search based on its 16S rRNA gene sequence revealed that it shares 95.5%, 90.6%, and 90.0% similarity with the 16S rRNA gene sequences of Catenovulum agarivorans $YM01^T$, Algicola sagamiensis, and Bowmanella pacifica W3-$3A^T$, respectively. Phylogenetic analyses demonstrated that strain $G7^T$ formed a distinct monophyletic clade closely related to species of the family Alteromonadaceae in the Alteromonas-like Gammaproteobacteria. The G+C content of strain $G7^T$ was 41.12 mol%. The DNA-DNA hybridization value between strain $G7^T$ and the phylogenetically closest strain $YM01^T$ was 19.63%. The genomes of $G7^T$ and $YM01^T$ had an average ANIb value of 70.00%. The predominant isoprenoid quinone of this particular strain was ubiquinone-8, whereas that of C. agarivorans $YM01^T$ was menaquinone-7. The major fatty acids of strain $G7^T$ were Iso-$C_{15:0}$ (41.47%), Anteiso-$C_{15:0}$ (22.99%), and $C_{16:1}{\omega}7c/iso-C_{15:0}2-OH$ (8.85%), which were quite different from those of $YM01^T$. Comparison of the phenotypic characteristics related to carbon utilization, enzyme production, and susceptibility to antibiotics also demonstrated that strain $G7^T$ is distinct from C. agarivorans $YM01^T$. Based on its phenotypic, chemotaxonomic, and phylogenetic distinctiveness, strain $G7^T$ was considered a novel genus and species in the Gammaproteobacteria, for which the name Gayadomonas joobiniege gen. nov. sp. nov. (ATCC BAA-2321 = $DSM25250^T=KCTC23721^T$) is proposed.

• Korean Journal of Applied Biomechanics
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• v.16 no.3
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• pp.137-148
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• 2006

The purpose of this study was to compare muscle activity in the lower extremity during walking wearing jogging and roller shoes. Twelve male middle school students (age: 15.0 yrs, height 173.7 cm, weight 587.7 N) who have no known musculoskeletal disorders were recruited as the subjects. Seven pairs of surface electrodes (QEMG8, Laxtha Korea, gain = 1,000, input impedance >$1012{\Omega}$, CMMR >100 dB) were attached to the right-hand side of the body to monitor the rectus femoris (RF), vastus medialis (VM), vastus lateralis (VL), biceps femoris (BF), tibialis anterior (TA), and medial (GM) and lateral gastrocnemius (GL) while subjects walked wearing roller and jogging shoes in random order at a speed of 1.1 m/s. An event sync unit with a bright LED light was used to synchronize the video and EMG recordings. EMG data were filtered using a 10 Hz to 350 Hz Butterworth band-passdigital filter and further normalized to the respective maximum voluntary isometric contraction EMG levels. For each trial being analyzed, five critical instants and four phases were identified from the recording. Averaged IEMG and peak IEMG were determined for each trial. For each dependent variable, paired t-test was performed to test if significant difference existed between shoe conditions (p<.05). The VM, TA, BF, and GM activities during the initial double limb stance and the initial single limb stance reduced significantly when going from jogging shoe to roller shoe condition. The decrease in EMG levels in those muscles indicated that the subjects locked the ankle and knee joints in an awkward fashion to compensate for the imbalance. Muscle activity in the GM for the roller shoe condition was significantly greater than the corresponding value for the jogging shoe condition during the terminal double limb stance and the terminal single limb stance. Because the subjects tried to keep their upper body weight in front of the hip to prevent falling backward, the GM activity for the roller shoe condition increased. It seems that there are differences in muscle activity between roller shoe and jogging shoe conditions. The differences in EMG pattern may be caused primarily by the altered position of ankle, knee, and center of mass throughout the walking cycle. Future studies should examine joint kinematics during walking with roller shoes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.95-102
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• 2001

Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$〉$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.