• Nutrition Research and Practice
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• v.14 no.5
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• pp.425-437
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• 2020

BACKGROUND/OBJECTIVES: Different fatty acids exert different health benefits. This study investigated the potential protective effects of perilla, olive, and safflower oils on high-fat diet-induced obesity and colon inflammation. MATERIALS/METHODS: Five-week old, C57BL/6J mice were assigned to 5 groups: low-fat diet (LFD), high-fat diet (HFD) and high-fat diet supplemented with-perilla oil (HPO), olive oil (HOO), and safflower oil (HSO). After 16 weeks of the experimental period, the mice were sacrificed, and blood and tissues were collected. The serum was analyzed for obesity- and inflammation-related biomarkers. Gene expression of the biomarkers in the liver, adipose tissue, and colon tissue was analyzed. Micro-computed tomography (CT) analysis was performed one week before sacrifice. RESULTS: Treatment with all the three oils significantly improved obesity-induced increases in body weight, liver weight, and epididymal fat weight as well as serum triglyceride and leptin levels. Treatment with perilla oil (PO) and safflower oil (SO) increased adiponectin levels. The micro-CT analysis revealed that PO and SO reduced abdominal fat volume considerably. The mRNA expression of lipogenic genes was reduced in all the three oilsupplemented groups and PO upregulated lipid oxidation in the liver. Supplementation of oils improved macroscopic score, increased colon length, and decreased serum endotoxin and proinflammatory cytokine levels in the colon. The abundance of Bifidobacteria was increased and that of Enterobacteriaceae was reduced in the PO-supplemented group. All three oils reduced proinflammatory cytokine levels, as indicated by the mRNA expression. In addition, PO increased the expression of tight junction proteins. CONCLUSIONS: Taken together, our data indicate that the three oils exert similar anti-obesity effects. Interestingly, compared with olive oil and SO, PO provides better protection against high-fat diet-induced colon inflammation, suggesting that PO consumption helps manage inflammation-related diseases and provides omega-3 fatty acids needed by the body.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.135-140
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• 1997

The influences of ZrB$_2$ additions to SiC on microstructural, DDM(Electrical Discharge Machining), mechanical and electrical properties were investigated. composites were prepared by adding 15, 30, 45 vol.% ZrB$_2$particles as a second phase to SiC matrix. SiC-ZrB$_2$ composites obtained by hot pressing for high temperature structural application were fully dense with the relative densities over 99%. The fracture toughness of the composites were increased with the ZrB$_2$contents. In case of composite containing 30vol.% ZrB$_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to that of monolithic SiC sample. The electrical resistivities of SiC-ZrB$_2$ composites decreased significantly with the ZrB$_2$ contents. The electrical resistivity of SiC-30vol.% ZrB$_2$ composite showed 6.50$\times$10$^{-4}$ $\Omega$.cm. Cutting velocity of EDM of SiC-ZrB$_2$ composites are directly proportional to duty factor of pulse width. Surface roughness, however, are not all proportional to pulse width. Higher-flexural strength composites show a trend toward smaller crater volumes, leaving a smoother surface; the average surface roughness of the SiC-ZrB$_2$ 15 vol.% composite with the flexural strengthe of 375㎫ was 3.2${\mu}{\textrm}{m}$, whereas the SiC-ZrB$_2$ 30.vol% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$ composites, the SiC-ZrB$_2$ two phases are distinct; the white phase is the ZrB$_2$and the gray phase is the SiC matrix. In the SEM micrographs of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present. It is shown that SiC-ZrB$_2$ composites are able to be machined without surface cracking.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.145-152
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• 2006

The densification behavior and electrical conductivity of $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics were investigated with the strontium gallate concentration ranging from 0 to $5\;mol\%$. Both the sintered density and grain size were found to increase rapidly up to $0.5\;mol\%$ $Sr_2Ga_2O_5$, and then to decrease with further addition. Dense $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics with $97\%$ of the theoretical density could be obtained for $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen sintered at $1250^{\circ}C$ for 5 h, whereas pure $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics needed to be sintered at $1550^{\circ}C$ in order to obtain an equivalent theoretical density, Electrical conductivity was measured as a function of dopant content, over the temperature range of $350\;-\;600^{\circ}C$ in air. Total conductivity of $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen showed the maximum conductivity of $2.37{\times}10^{-2}{{\Omega}-1}{\cdot}cm^{-1}$ at $500^{\circ}C$, The addition of strontium gallate was found to promote the sintering properties and electrical conductivities of $Gd_2O_3$-doped $CeO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.286-289
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• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.455-458
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• 2001

Spinel $LiMn_{2-y}$$M_{y}$ $O_4$powder was prepared solid-state method by calcining the mixture of LiOH - $H_2O$, Mn $O_2$, ZnO and MgO at 80$0^{\circ}C$ for 36h. To investigate the effect of substitution with Mg, Zn cation, charge-discharge experiments and initial impedance spectroscopy performed. The structure of $LiMn_{2-y}$$M_{y}$ $O_4$crystallites was analyzed from powder X-ray diffraction data as a cubic spinel, space group Fd3m. all cathode material showed spinel phase based on cubic phase in X-ray diffraction. Ununiform which calculated by (111) face and (222) face was constant in spite of the change of y value, except PUf\ulcorner LiM $n_2$ $O_4$. The discharge capacities of the cathode for the cation subbstitUtes $LiMn_{2-y}$$M_{y}$ $O_4$/Li cell at the 1st cycle and at the 40th cycle were about 120~124 and 108~112mAh/g except LiM $n_{1.9}$Z $n_{0.1}$ $O_4$/Li cell, respectively. This cell capacity is retained by 93% after 40th cycle. AC impedance of $LiMn_{2-y}$$M_{y}$ $O_4$/Li cells revealed the similar resistance of about 65~110$\Omega$ before cycling. before cycling.g.g.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.202-206
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• 2011

We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90W. GZO thin film shows the lowest resistivity of $2.2{\times}10^{-4}{\Omega}cm$ and the highest electron concentration of $1.7{\times}10^{21}cm^{-3}$ at 90W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.

• Korean Journal of Veterinary Research
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• v.43 no.4
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• pp.587-595
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• 2003

The aim of this study was to investigate trazodone's effect on vasorelaxation and blood pressure lowering and to examine its underlying mechanism of action in isolated thoracic aorta and anesthesized rats. Precontracted aortic rings with high KCl were relaxed with trazodone, at concentrations of $50{\mu}M$ or greater. However, precontracted rings with phenylephrine (PE) were relaxed with trazodone, at concentrations of $0.03{\mu}M$ or greater, in a concentration-dependent manner. These relaxant effects of trazodone on endothelium intact rat aortic rings were significantly greater than those on denuded rings. The trazodone-induced relaxations were suppressed by nitric oxide synthase (NOS) inhibitors, N(G)-nitro-L-arginine (L-NNA) and N(omega)-nitro-L-arginine methyl ester (L-NAME), guanylate cyclase inhibitors, methylene blue and 1H-[1,2,4]oxadiazolo[4,3-a]quinoxalin-1-one (ODQ), a $Ca^{2+}$-activated $K^+$ channel blocker, tetrabutylammonium (TBA), a $Ca^{2+}$ channel blocker, nifedipine, $Na^+$ channel blockers, lidocaine and procaine, and removal of extracellular $Na^+$, but not by aminoguanidine, 2-nitro-4-carboxyphenyl-n, n-diphenylcarbamate (NCDC), indomethacin, glibenclamide and clotrimazole. In vivo, infusion of trazodone elicited significant decrease in arterial blood pressure. Trazodone-induced decrease in blood pressure was markedly inhibited by pretreatment of intravenous injection of saponin, L-NNA, methylene blue, TBA, lidocaine or nifedipine. These findings suggest that the endothelium-dependent relaxation and decrease in blood pressure induced by trazodone is mediated by release of NO from the endothelium, activation of TBA-sensitive $Ca^{2+}$-activated $K^+$ channels or inhibition of $Ca^{2+}$ entry through voltage-gated channel.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.710-714
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• 2007

LSGM$(La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_{3-{\delta}})$ is the very promising electrolyte material for lower-temperature operation of SOFCs, especially when realized in anode-supported cells. But it is notorious for reacting with other cell components and resulting in the highly resistive reaction phases detrimental to cell performance. LDC$(La_{0.4}Ce_{0.6}O_{1.8})$, which is known to keep the interfacial stability between LSGM electrolyte and anode, was adopted in the anode-supported cell, and its effect on the interfacial reactivity and electrochemical performance of the cell was investigated. No severe interfacial reaction and corresponding resistive secondary phase was found in the cell with LDC buffer layer, and this is due to its ability to sustain the La chemical potential in LSGM. The cell exhibited the open circuit voltage of 0.64V, the maximum power density of 223 $mW/cm^2$, and the ohmic resistance of $0.17{\Omega}cm^2$ at $700^{\circ}C$. These values were much improved compared with those from the cell without any buffer layer, which implies that formation of the resistive reaction phases in LSGM and then deterioration of the cell performance is resulted mainly from the La diffusion from LSGM electrolyte to anode.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.6
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• pp.486-494
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• 2012

In this paper, we proposes the three-phase embedded Z-source inverter consisting of the three embedded Z-source converters and it's the output voltage control method. Each embedded Z-source converter can produce the bipolar output capacitor voltages according to duty ratio D such as single-phase PWM inverter. The output AC voltage of the proposed system is obtained as the difference in the output capacitor voltages of each converter, and the L-C output filter is not required. Because the output AC voltage can be stepped up and down, the boost DC converter in the conventional two-stage inverter is unnecessary. To confirm the validity of the proposed system, PSIM simulation and a DSP based experiment were performed under the condition of the input DC voltage 38V, load $100{\Omega}$, and switching frequency 30kHz. Each converter is connected by Y-connection for three-phase loads. In case that the output phase voltage is the same $38V_{peak}$ as the input DC voltage and is the 1.5 times($57V_{peak}$), the simulation and experimental results ; capacitor voltages, output phase voltages, output line voltages, inductor currents, and switch voltages were verified and discussed.