• Electrical & Electronic Materials
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• v.10 no.3
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1370-1372
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• 1998

Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.143-152
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• 2002

The growth of Polypyrrole film has been investigated during electropolymerization in an aqueous solution on bare and SAM modified gold electrodes by in-situ EQCM and ex-situ AFM. According to the result of cyclic voltammetry measurements, in the case of a bare gold electrode, the electrochemical deposition of polypyrrole were dependent on the limiting oxidative potential, but not on scan numbers. When the limiting potential higher than 0.8 V was applied on the electrode, the amount of polypyrrole deposited on a gold electrode was rapidly increased and the abnormal mass change attributed to the rearrangement of polypyrrole films was observed as the scan number increased. The polypyrrole film Prepared on electrodes modified with 1-dodecanethiol SAM or thiophene SAM grew 3-dimensionally with the rearrangement of film. However, in the case of BPUS SAM, 2-dimensional layer-by-layer growth of film was observed without the rearrangement of film. AFM images showed films with chain-shaped and/ or donut-shaped polymers when grown rapidly and a wrinkled film at the steady state condition.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• The Plant Pathology Journal
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• v.16 no.1
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• pp.25-28
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• 2000

The effect of ionic osmotic potential (Ψ$\pi$), and matric potential (Ψm) in the range of -0.2 to -4.0 Mpa on mycelial growth of three species of Pleurotus (P.florida, P.ostrenatus and P.safor-caju) were determined over a range of temperature (15-3$0^{\circ}C$) on a 2% malt extract agar medium and compared with the Ψ$\pi$ effect on growth of two strains of Trichoderma green mould. With the ionic solute KCl, optimun Ψ$\pi$for growth was -0.2 MPa for P.floreda and in the range of -0.2 to -0.5 MPa, with slight growth at -3.0 MPa and with nogrowth at -4.0 MPa. Of the species of Pleurotus, P.florida grew signigicantly slower than the other two species. Growt of the species of Pleurocus was significantly slower when water potential (Ψ$\omega$) was modified matrically with polyethylene glycol (PEG) 8000 then osmotically with KCl. They were also more sensitive to changes in Ψm than Ψ$\pi$The optimum Ψm of the Pleurotus was -0.5 Ψm, with no growth below -3.0 MPa. Of the species of Pleurotus, P.florida was most sensitive and P.sajor-caju was more tolerent to lowered Ψ$\pi$,but P.sajor-caju was most sensitive to lowered Ψm. The growth rate of the Trichoderma green mould strains was much faster than that observed for the Pleurotus spp. Optimum growth for bot strains of Trichoderma was in the range of -0.2 to -0.5 MPa. Strain CNU 503 was more tolerant to water stress than strain CNU 501. Both strains were able to grow up to 30% of optimum growth at -4.0 MPa at 25-3$0^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.39-43
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• 2001

Nanocrystalline Fe-Sm-O thin films were prepared by RF magnetron reactive sputtering method in $Ar+O_2$mixed atmosphere with the $O_2$content of 5%. The compositions of the thin films were changed by changing the number of $Sm_2O_3$ chips. The best soft magnetic properties of the thin film with the composition of $Fe_{83.4}Sm_{3.4}O_{13.2}$ were saturation flux density of 18 kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100 MHz, respectively. The electrical resistivity of Fe-Sm-O thin films was increased with increasing the amount of Sm and O elements which combined each other, the electrical resistivity of$Fe_{83.4}Sm_{3.4}O_{13.2}$ thin film was $130{\mu}{\Omega}cm$. In case of the small amount of Sm and O elements, the microstructures of Fe-Sm-O thin films showed a precipitated phase of $Sm_2O_3$ on the ${\alpha}-Fe$ phase. With the increase of the amount of Sm and O elements, the microstructures of the Fe- Sm-O thin films were changed into a mixed structure of ${\alpha}-Fe$ crystal-phase and Sm-oxide amorphous phase. The Fe-Sm-O thin films with Fe content in the range of 72~94 at% exhibited the quality factor (Q = $\mu$′/$\mu$") of 7~75 up to 50 MHz.

• Journal of Biomedical Engineering Research
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• v.31 no.4
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• pp.292-301
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• 2010

To restore visual sensation of blind patients, we have proposed a fully implantable retinal prosthesis comprising an three dimensionally (3D) stacked retinal chip for transforming optical signal to electrical signal, a flexible cable with stimulus electrode array for stimulating retina cells, and coupling coils for power transmission. The 3D stacked retinal chip is consisted of several LSI chips such as photodetector, signal processing circuit, and stimulus current generator. They are vertically stacked and electrically connected using 3D integration technology. Our retinal prosthesis has a small size and lightweight with high resolution, therefore it could increase the patients` quality of life (QOL). For realizing the fully implantable retinal prosthesis, we developed a retinal prosthesis module comprising a retinal prosthesis chip and a flexible cable with stimulus electrode array for generating optimal stimulus current. In this study, we used a 2D retinal chip as a prototype retinal prosthesis chip. We fabricated the polymide-based flexible cable of $20{\mu}m$ thickness where 16 channels Pt stimulus electrode array was formed in the cable. Pt electrode has an impedance of $9.9k{\Omega}$ at 400Hz frequency. The retinal prosthesis chip was mounted on the flexible cable by an epoxy and electrically connected by Au wire. The retinal prosthesis chip was cappted by a silicone to pretect from corrosive environments in an eyeball. Then, the fabricated retinal prosthesis module was implanted into an eyeball of a rabbit. We successfully recorded electrically evoked potential (EEP) elicited from the rabbit brain by the current stimulation supplied from the implanted retinal prosthesis module. EEP amplitude was increased linearly with illumination intensity and irradiation time of incident light. The retinal prosthesis chip was well functioned after implanting into the eyeball of the rabbit.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.91-96
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• 1997

The electrical characteristics and the plasma parameters of planar inductively coupled plasmas (ICP) have been measured. The resistance of the total load including the coil and the plasma varied from 1 to 4 W and the inductance from 1.5 m to 2 mH when the power was changed from 100 to 1000 W and the pressure from 1 to 10 mTorr. The density of electron measured by Langmuir probe was over $10^{11}/\textrm{cm}^3$ and the temperature varied between 3 and 5 eV as the process conditions were changed. Bias modulation was adopted as a new method to improve the selectivity of $SiO_2$on Si in $C_4F_8$ (octafluorocyclobutane) plasma. The selectivity was improved as the duty ratio decreased, but the etch rate of $SiO_2$decreased below 400$\AA$/min. $H_2$addition to $C_4F_8$ plasma showed that the etch selectivity could be higher than 50 and the etch rate of $SiO_2$over 2000$\AA$/min when 60% $H_2$was added.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.88-88
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• 2011

ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.