• 한국결정성장학회지
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• 제19권2호
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• pp.79-83
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• 2009

저열팽창계수를 갖는 재료를 개발하기 위하여 $Li_{2}O-Al_{2}O_{3}-SiO_{2}$계 glass-ceramics를 제조하고 그 특성을 조사하였다. 이 계의 유리를 $775^{\circ}C$에서 2시간 가열하여 핵생성시키고 $825{\sim}900^{\circ}C$로 가열하여 2시간 결정화하였다. 결정화 유리의 결정구조는 단일상의 $\beta$-quartz solid solution($Li_{x}Al_{x}Si_{1-x}O_{2}$)이었고, 열팽창계수는 $25{\sim}300^{\circ}C$에서 $4.40{\times}10^{-7}{\sim}1.33{\times}10^{-6}K^{-1}$를, 그리고 $25{\sim}800^{\circ}C$에서는 $1.56{\times}10^{-6}{\sim}2.53{\times}10^{-6}K^{-1}$를 보였으며 저온 영역의 열팽창율보다는 고온 영역의 열팽창율이 더 높은 값을 보였다. 이 계의 결정화 유리의 기계적 강도는 결정화 온도에 의존하지 않고 대체로 110 Mpa의 높은 값을 보였다.

• 한국분말재료학회지
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• 제6권1호
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• pp.111-118
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• 1999

Ni(Fe)Al powders containing a homogeneous distribution of the in-situ formed AIN and $Al_2O_3$ dispersoids have been produced by mechanical alloying process in a controlled atmosphere using high energy attrition mill. The powders have been successfully consolidated by hot extrusion process. The phase information investigated by TEM and XRD analysis reveals that Fe can be soluble up to 20% to the NiAl phase ($\beta$) at room temperature after MA process. Subsequent thermomechanical treatment under specific condition has been tried to induce secondary recrystallization (SRx) to improve high temperature properties, however, the clear evidence of SRx was not obtained in this material. Mechanical properties in term of strength at room temperature as well as at high temperatures have been improved by the addition pf AIN, and the room temperature ductility has been shown to be improved after heat treatment, presumably due to the precipitation of second phase of $\alpha$ in this material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.157-161
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• 2000

Blue phosphor of Ba-Mg-Al-O:Eu$^{2+}$ phase was fabricated by conventional firing techniques under reducing atmosphere and its photoluminescence properties are studied with varying Eu concentration and phost-annealing temperature under air atmosphere. This phosphors were well crystallized with particle size in the range of 3~5um and emitted a blue light at a dominent wavelength 450nm for 254nm UV irradiation. The concentration quenching wit Eu$^{2+}$ was that with increasing Eu concentration the energy transfer between the activator ions steadily improves, so that the excitation energy is transported over larger distances through the lattice before luminescence can occur. Thermal quenching also occurred in this phosphor means that in a host lattice with the $\beta$-alumina structure the bond of an Eu$^{2+}$ ion with the nearest-neighbour oxygen ion is much stronger than in a lattice with the magnetoplumbite structure.cture.

• Archives of Pharmacal Research
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• 제25권6호
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• pp.831-836
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• 2002

A new and two known lupane-triterpene glycosides were isolated from the hot MeOH fraction of the leaves of Acanthopanax gracilistylus W. W. Smith. Based on the physical properties and spectroscopic data, their chemical structures were determined as acankoreoside A (1), acankoreoside D (2), and $3{\alpha}-hydroxy-lup-23-al-20(29)-en-28-oic$ acid $28-O-{\alpha}-L-rhamnopyranosyl-(1{\rightarrow}4)-{$beta}-D-glucopyranosyl-(1{\rightarrow}6)-{\beta}-D-glucopyranosyl$ ester (3), respectively. To our best knowledge, compand 3 appears to be novel, which was named as wujiapioside A.

• 한국결정성장학회지
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• 제7권2호
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• pp.259-270
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• 1997

$\alpha-Al_2O_3$와 비정질 $TiO_2$부터 $Al_2TiO_5$를 합성하기 위한 고체상태반응의 반응속도를 $1200~1300^{\circ}C$ 온도 범위에서 연구하였다. 반응속도는 $Al_2O_3$분말을 코팅한 50 mol%의. $TiO_2$와 일정한 온도에서 여러 시간동안 가열하여 생성된 혼합물에 의하여 결정되었다. MgO안의 반응물과 미반응물의 양은 X-선 회절분석에 의하여 결정되었다. $Al_2TiO_5$의 부피율과 peak intensity비의 자료로부터 $Al_2O_3$와 $TiO_2$의 pseudobrookite(Tialite)형태로의 반응은 $1280^{\circ}C$와 $1300^{\circ}C$ 사이에서 시작되었다. 고체상태반응 활성화 에너지는 Arrhenius식에 의하여 결정되었다. 활성화 에너지는 622.4 kJ/mol이다.

• 한국세라믹학회지
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• 제24권5호
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• pp.453-460
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• 1987

β'-sialon(Z=2.7) specimens with <30%wt. graphite as a reducing agent were decomposed at 1350°up to 1,450℃ under the atmosphere of 90% N2-10%H2. The decomposition of β'-sialon was calculated from the change in Z-value, and the formation of new minerals was identified from X-ray diffraction patterns. The decomposition reactions of sialon were considered to yield a stable sialon close to β-silicon nitride and some aluminum compounds according to the following equations; β'-sialon(s)＋C(s)＋N2(g)→β2-sialon(metastable)＋β3-sialon(stalbe phase) β2-sialon(s)＋C(s)＋N2(g)→β3-sialon(s)＋AlN(s)＋α-Al2O3(s)＋15R(s)＋SiO(g)＋Al2O(g)＋CO(g) Z-value; β2( 3.5)>β'( 2.7)>β3( 0.5) The decomposition rate of sialon was controlled by two mechanisms ; One was characterized by the interface area of contact, corresponding to an apparent activation energy of 50.5Kcal/mol in the initial stage, and the other by the diffusion, corresponding to that of 104.3Kcal/mol in the final stage of the decomposition.

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• 한국세라믹학회지
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• 제46권4호
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• pp.385-391
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• 2009

Need for plasma resistant ceramic materials has been continuously increased in semiconductor and display industry requiring plasma processing to realize ultra fine circuit process. Among promising candidates, alumina ceramics have still some advantages with respect to its economic aspect. In this study, fabrication of plasma resistant alumina ceramics was tried, and its processing optimization was also aimed. Careful processing control and thereby uniform microstructure of $Al_2O_3$ gave rise to enhanced plasma resistance, even comparable to market-governing commercial $Al_2O_3$. A further study is needed concerning ${\beta}-Al_2O_3$ materials system, presumably playing a decisive role in decreasing plasma resistance of $Al_2O_3$ ceramics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1436-1438
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• 2001

The $\beta$-SiC + $ZrB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3$ + $Y_2O_3$ (6 : 4wt%) powder as a function of sintering temperature. The relative density showed the highest value of 81.1% at 1900$^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest value of 230 MPa for composites sintered at 1900$^{\circ}C$. The vicker's hardness and the fracture toughness showed the highest value of increased with increasing sintering temperature and showed the highest of 9.88 GPa and 6.05 $MPa{\cdot}m^{1/2}$ at 1900$^{\circ}C$. The electrical resistivity was measured by the Pauw method from 25$^{\circ}C$ to 700$^{\circ}C$. The electrical resistivity of the composites showed the PTCR (Positive Temperature Coefficient Resistivity).

• The Korean Journal of Ceramics
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• 제2권3호
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• pp.152-156
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• 1996

Fine (~0.09 $\mu$m) $\beta$-SiC Powders with 3.3wt% of large (~0.44$\mu$m) $\alpha$-SiC of $\beta$-SiC particles (seeds) added were hotpressed at 175$0^{\circ}C$ using $Y_2O_3$, $Al_2O_3$ and CaO as sintering aids and then annealed at 185$0^{\circ}C$ for 4 h to enhance grain growth. The resultant microstructure and polytypes were analyzed by high resolution electron microscopy (HREM).Growth of $\beta$-SiC with high density of microtwins and formation of ${\alpha}/{\beta}$ composite grains consisting of $\alpha$-SiC domain sandwiched between $\beta$-SiC domains were found in both specimens. When large $\alpha$-SiC (mostly 6H) seeds were added, the $\beta$-SiC transformend preferentially to the 6H polytype. In contrast, when large $\beta$-SiC (3C) seeds were added, the fine $\beta$-SiC transformed preferentially to the 4H polytype. Such results suggested that the polytype formation in SiC was influenced by crystalline form of seeds added as well as the chemistry of sintering aids. The ${\alpha}/{\beta}$ interface played and important role in the formation of elongated grains as evidenced by presence of ${\alpha}/{\beta}$ composite grains with high aspect ratio.