• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.60-64
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• 2007

Ba-Ferrite single crystals were prepared and characterized by X-ray, SEM and Mossbauer spectroscopy. The single crystal layers was cut in the c-axis and radiated to the surface by ${\gamma}-rays$ for Mossbauer spectroscopy. We found out that the spin states in Fe atoms were parallel to the ${\gamma}-rays$ direction. The temperature dependence of the hyperfine field is almost similar to that of powder samples. The crystal structure is a Magnetoplumbite without any other phases and the lattice parameters are found out with $a_0=5.892{\AA},\;b_0=5.892{\AA},\;c_0=23.198{\AA}$. $M\"{o}ssbauer$ spectrum in single crystal have 5 sets off absorption lines in each Fe site when the ${\gamma}-rays$ have the same radiation direction with the c-axis in the crystal, which mean that the whole crystal bulk formed only one crystal and same spin direction. The hysteresis curve shows the saturation moment and coercive force of 70.71 emu/g and 320 Oe respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.23 no.1
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• pp.27-44
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• 1993

This study was performed to investigate the changes of mandibular condyle by low calcium diet and the effects of irradiation on the bone in osteoporotic state. In order to carry out this experiment, 80 seven-week old Sprague-Dawley strain rats weighing about 150 gm were selected and equally divided into one experimental group of 40 rats and one control group with the remainder. The experimental group and the control group were then subdivided into two group and exposed to irradiation. The two irradiation groups received a single dose of 20 Gy on the jaw area only and irradiated with a cobalt-60 teletherapy unit. The rats in the control and experimental groups were serially terminated by fours on the 3rd, the 7th, the 14th, and the 21st day after irradiation. After termination, both sides of the dead rats mandibular condyle were removed and fixed with 10% neutral formalin. The bone mineral density of mandibular condyle was measured by use of dual energy X-ray bone densitometer(model DDX-alpha, Lunn Corp., U. S. A.). The mandibular condyle was radiographed with Hitex HA-80(Hitex Co., Japan). Thereafter, the obtained radiographs were observed, and the mandibular condyle was further decalcified and embedded in paraffin as the general method. The specimen sectioned and stained with hematoxylin-eosin, PAS and Rabbit Anti-Human Tumor Necrosis Factor-a observed by a light microscope. The obtained results were as follows: 1. In the non-irradiated group with the low calcium diet, the bone mineral density of the condyle was markedly decreased after 14 days, and decrease the number of trabeculae of the condyle and resorption of the calcified cartilaginous zone were observed after 3 days. On microscopic observations, the number nd size of trabeculae were decreased after 7 days of experiment. 2. In the irradiated group with the low calcium diet, the bone mineral density of the condyle was markedly decreased after 14 days and resorption of the calcified cartilaginous zone and decrease the number and coarse of the trabeculae of the condyle were observed. These findings were extended rather than in non-irradiated group with low calcium diet. On microscopic observations, many osteoclasts were detected and the number and size of trabeculae were somewhat decreased after 7 days. Also there was degenerative changes of tissues of bone marrow on the 14th day but that condition was restored on the 21st day of experiment. 3. In the irradiated group with normal diet, the bone mineral density of the condyle was somewhat decreased with times and degree of decrease of the number of trabeculae was somewhat larger than in the non-irradiated group with normal diet. On microscopic observations, the tissues of bone marrow were atrophic and degenerative changes but that condition was restored on the 21st day of experiment. 4. In immunocytochemical findings, in the irradiated and non-irradiated groups with low calcium diet, negative or partial positive response to TNF was observed, but positive response in the normal diet groups.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.55.2-55
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• 1998

다견정 심리판-거l르마늄(JXlly-SiGe)은 TFT(thin-film transistor)와 갇븐 소자 응용에 있어서 중요한 불칠이다 .. LPCVD (low pressure chemical vapor deposition) 방법으로 비정칠 SiGc (a-SiGe) 박막올 증 착시키고 고상결정화(SPC: solid-phase crystallization)시켜 poly-SiGc옹 얻는 것은 잘 알려져 있다. 그러 나 그러나 PF'||'&'||'pound;VD-SPC 방법올 이용한 poly-SiGc의 제조에 대해서는 아직 두드러지게 연구된 바 없다. 우리단 PF'||'&'||'pound;VD 방법으로 a-SiGc 박막올 증착시키고 고상캘정화시켜 poly-SiGc올 얻었 R며, :~ 결정성, G Gc 농도, 결정핍의 평끌 크기 눔올 XRD (x-ray diffraction) 방법으호 조사하였다. 특히 pr'||'&'||'pound;VD 증착시 가판온도,Gc 함유량 등이 고상화에 미치는 영향에 대해서 조사하였다. P PECVD 장치는 터보펌프콸 사용하여 71저진공이 2xlOlongleftarrow5 Torr에 이르렀다. 가판윤 SiOOO) 웨이퍼륜 사용하고 기판 온도는 약 150- 35()"C 사이에서 변화되었다. 증착가스는 SiH4, GcH4, 112 등흘 썼다. 증착 압력과 r.f 전력용 각각 O.25ToIT와 3W로 일정하게 하였다 .. Gc 함유량(x)은 x x=O.O-O.5 사이에서 변화되었다 .. PECVD모 증착된 SiGc 박막들은 고상결정화를 위해 $\theta$X)"(:: Nz 분위기에서 24시간동안, 혹은 5OO'C에서 4열간 가열되었다. 고상결정화 후 poly-SiGc 박막은 SiGc(Ill), (220), (311) XRD 피크들올 보여주었으며, 각 피 크들은 poly-Si에 비하여 왼쪽으로 Bragg 각이 이동되었고, Vegard’slaw에 의해서 x의 값올 확 인할 수 있었다. 이것온 RBS 결과와 열치하였다. 약 150-350'C 사이에서 변화된 기판온도의 범위 에서 증착온도가 낮올수콕 견정립의 크기는 대체로 증가하는 것으로 나타났다 .. XHD로 추정된 형 균 결정립의 크기는 최대 약 3$\alpha$1m 정도였다. 또한 같끈 샘플뜰에 대해서 기판온도가 낮올수록 증착속도가 증가함옴 확인하였다 .. Gc 함유량이 x=O.1에서 x=O.5로 증가함에 따라서도 결정립의 크기와 SiGc 증착속도는 증가하는 것으로 나타났다 .. Hwang [1] , Kim[2] 둥의 연구자들은 Gc 함유 량이 증가함에 따라 결정 립 크기가 캄소하는 것올 보고하였으냐, Tsai [3] 둥은 반대의 결과플 보 고하고 Ge 힘유량의 증가시 결정립 크기의 증가에 대해 Gc의 Si보다 낮은 융점 (melting point) 올 강조한 바 있다. 결정립 크기의 증가는 대체로 SiGe 중착속도의 증가와도 관련이 있음올 볼 때, poly-SiGc의 경우에도 polv-Si의 고상화에서와 같이 증착속도가 빠를수록 최종적언 결정럽의 크기가 커지는 것으로 이해될 수도 있다 .. PECVD 증착시 증착속도의 증가는 증착된 박딱에서의 무켈서도를 증 가시킬 수 있음올 고려하면, 이라한 결파플온 p이y-SiGc의 고상결정화에서도 ploy-Si의 고상결정 화에서와 마찬가지로 초기 박막에서의 구조직 무절서도가 클수록, 고상결정화 후 결정 립의 크기 가 커칠 수 있음올 보여준다고 생각휠 수 있다,

• Korean Journal of Food Science and Technology
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• v.13 no.2
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• pp.133-141
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• 1981

The gelatinization phenomena of bracken root starch were examined by means of the loss of birefringence, degree of digestibility by amylase and X-ray diffraction. These results indicated that gelatinization temperature of the starch was $55{\sim}60^{\circ}$ and over 95% of starch were gelatinized at the temperature between 60 and $70^{\circ}C$. The swelling power of the bracken root starch was much less steeper than that of potato or tapioca starch. Amylograph data on the various starch concentrations showed the pasting temperature of $62{\sim}68^{\circ}$, peak height of $80{\sim}840$ Brabender unit (BU) and peak after cooling to $50^{\circ}C$ of $110{\sim}555\;BU.$. According to the information obtained from amylograph data, the bracken root starch showed low set back. The rate of retrogradation of the starch as tested by Texturometer was slower and faster than that of potato and tapioca starches, respectively.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Journal of the Korean Chemical Society
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• v.25 no.6
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• pp.343-350
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• 1981

The crystal and molecular structure of P-aminobenzaldehyde cyclohexylthiosemicarbazone, C14H20N4S, has been determined from 2712 integrated intensities measured on a computer controlled four circle diffractometer with monochromated $CuK_{\alpha}$, X-ray radiation. The crystals are monoclinic, space group C2/c with eight molecules in a unit cell of dimensions, a = 12.488(2), b = 12.276(4), c = 19.997(6)${\AA}$ and ${\beta}=103.55(3)^{\circ}$. The structure was solved by Patterson and Fourier method and refined by a full-matrix least squares method to a final R value of 0.058 for all reflections. The C(8)-S bond is trans to N(2)-N(3) and C(8)-N(1) is cis to N(2)-N(3) bond. The cyclohexane ring has chair conformation and makes an angle of $40.7^{\circ}$ with the benzene ring. The molecules are linked by N(2)H…S hydrogen bonds into dimer-like units which are held together by $N-H{\ldots}N$ hydrogen bonds. Sulfur accepts second rather weak hydrogen bond from N(4). An intramolecular hydrogen bond exists between N(1) and N(3) atoms.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3696-3701
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• 2011

The single-crystal structure of partially dehydrated partially $Mg^{2+}$-exchanged zeolite Y, ${\mid}Mg{30.5}Na_{14}(H_2O)_{2.5}{\mid}$ [$Si_{117}Al_{75}O_{384}$]-FAU per unit cell, ${\alpha}$ = 25.5060(1) ${\AA}$, dehydrated at 723 K and $1{\times}10^{-4}$ Pa, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd$\bar{3}$ m at 100(1) K. The structure was refined using all intensities to the final error indices (using only the 561 reflections with $F_{\circ}$ > $4{\sigma}(F_{\circ})$) $R_1$ = 0.0377 (Based on F) and $R_2$ = 0.1032 (Based on $F^2$). About 30.5 $Mg^{2+}$ ions per unit cell are found at four different crystallographic sites. The 14 $Mg^{2+}$ ions occupy at site I at the center of double 6-ring (Mg-O = 2.231(3) ${\AA}$, O-Mg-O = $89.15(11)^{\circ}$ and $90.85(11)^{\circ}$). Four $Mg^{2+}$ ions are found at site I' in the sodalite cavity; the $Mg^{2+}$ ions are recessed 1.22 ${\AA}$ into the sodalite cavity from their 3-oxygen plane (Mg-O = 2.20(3) ${\AA}$ and O-Mg-O = $92.3(14)^{\circ}$). Site II' positions (opposite single 6-rings in the sodalite cage) are occupied by 2.5 $Mg^{2+}$ ions, each coordinated to an $H_2O$ molecule (Mg-O = 2.187(20) ${\AA}$ and O-Mg-O = $114.2(16)^{\circ}$). The 10 $Mg^{2+}$ ions are nearly three-quarters filled at site II in the supercage, being recessed 0.12 ${\AA}$ into the supercage (Mg-O = 2.123(4) A and O-Mg-O = $119.70(19)^{\circ}$). About 14 $Na^+$ ions per unit cell are found at one crystallographic site; the $Na^+$ ions are located at site II in the supercage (Na-O = 2.234(7) ${\AA}$ and O-Mg-O = $110.5(4)^{\circ}$).

• Journal of Acupuncture Research
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• v.25 no.5
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• pp.167-189
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• 2008

This study was conducted to investigate the factors which are related to Bone Mineral Density(BMD) of female for prevention of osteoporosis. We measured the BMD of lumbar spine(L2-L4) and femoral neck in 4802 female, using dual energy X-ray absorptionmetry(DEXA; DPX-alpha. Lunar, U.S.A.). and then analysed the 9 factors-age group, body mass index(BMI), amount of smoking, drinking, exercise, sleep, and fast blood sugar-which are related to BMD of female. The following results were obtained : 1. In age group, T-score was the highest at 36－42(六七) years group in lumbar spine(L2-L4) and at 15－21(三七) years group in femoral neck. and then it was decreased rapidly after 43－49(七七) years group in both lumbar spine(L2-L4) and femoral neck. Therefore we concluded that T-score of female in lumbar spine(L2-L4) and femoral neck change according to age group in $\ll$Hwangjaenaekyong Somun; 黃帝內經 素問$\gg$. 2. In BMI, T-score of lumbar spine(L2-L4) and femoral neck were increased according to BMI increase. 3. In amount of drinking and smoking, T-score was highest in heavy groups(women who have drunk soju more than 4 bottles for a week) in both lumbar spine(L2-L4) and femoral neck. But there t was no significant difference in comparison according to age group. 4. In exercise, T-score was higher in exercising group than non exercising group. And it appeared that women who have taken proper exercise had higher T-score than women who have taken exercise daily. 5. T-score was higher in women who ordinarily sleep well in both lumbar spine(L2-L4) and femoral neck than sleep badly. And there was significant difference in 43-56 years group. 6. T-score was low in the group that exceed 110mg/dl in fast blood sugar. Conclusions : The age group in $\ll$Hwangjaenaekyong Somun; 黃帝內經 素問$\gg$ is related to BMD of women. And risk factors-BMI, exercise, sleep, fast blood sugar, thyroid disease-are related to BMD of women. Therefore we expect that this study will help for prevention of osteoporosis of women, and further study will be achieved.