• The Journal of the Petrological Society of Korea
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• v.9 no.4
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• pp.238-253
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• 2000

In the eastern part of the Euiseong Basin acidic~intermediate volcanic rocks widely distribute on the Cretaceous sedimentary basement. Coeval granitic rocks and dyke rocks intruded into the volcanic rocks. Volcanic stratigraphy of study area are andesite lava, dacitic lapilli tuff, dacitic flow-banded lava, rhyolitic bedded tuff, rhyolitic massive tuff, dacitic massive lava, rhyolitlc welded tuff occur from the lower to the upper strata. $SiO_2$ content of the volcanic rocks range from 51 to 74 wt.%. With the increase of $SiO_2$, the contents of $TiO_2$, $Al_2$$O_3$, MgO, FeOT MnO, CaO, $P_2$$O_{5}$ decrease but those of $K_2$O increase. The contents of $Na_2$O show dispersive variation. This trend is quite sim-ilar to the major oxide variation in the volcanic rocks from the Yucheon sub-basin. The geochemical natures indicate that the volcanic rocks in the study area are discriminated to the island-arc type high K to medium K calc-alkaline rocks. The compositional variation of the volcanic rocks can be explained by the plagioclase fractionation of the volcanic magmas originated from similar source materials. The volcanic stratigraphy seems to have formed by at least two eruptive sequences of andesitic to rhyolitic and dacitic to rhyolitic magmas which underwent crystallization differentiation.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.