• 한국세라믹학회지
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• 제36권4호
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• pp.391-402
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• 1999

Characteristics of composite electrolytes which were prepared by coating a thin film of YSZ (yttria sta-bilized zirconia : (ZrO2)0.92 (Y2O3)0.08) on YDC (yttria doped ceria : Ce0.8Y0.2O1.9) with mixed conductivity have been investigated in order to develop the low-temperature solid oxide fuel cell. The thickness (t) of spin-coated YSZ thin films after the heat-treatment at 600$^{\circ}C$ was increased proportionally to the sol con-centrations (C) while the decrease in its thickness with the spin rate ($\omega$) could be expressed in the e-quation of ln t=9.49-0.53 ln $\omega$(0.99mol//s sol conc.) When the sol concentration and the spin rate being less than 0.99 mol/l and higher than 1000 rpm respectively reliable YSZ/YDC composite electrolytes could be obtained by multi-coating although several micro-cracks were observed in singly coated YSZ film surfaces. The dense YSZ film with a 1$\mu\textrm{m}$ thickness was prepared by coating of 0.99 mol/l YSZ sol five-times at 2000 rpm followed by heat-treatment at 1400$^{\circ}C$ for 2h, The adhesion between YSZ film and YDC substrate was found to be very good. The open circuit voltages of H2/O2 single cell with YSZ/YDC composite electrolytes were 0.79∼0.82 V at 800$^{\circ}C$ and 0.75∼0.77V at 900$^{\circ}C$ The open circuit voltage was inversely proportioned to the thickness ratio of YSZ thin film (1$\mu\textrm{m}$) to YDC substrate(0.28-2.22 mm)

• 한국세라믹학회지
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• 제48권5호
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• pp.439-446
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• 2011

Yttria stabilized zirconia (YSZ) coating was formed on AA1050 Al alloys by aerosol deposition (AD), and its electrochemical corrosion properties were investigated in 3.5 wt% NaCl and 0.5M $H_2SO_4$ solutions. The crack-free, dense, and ~5 ${\mu}m$ thick YSZ coating was successfully obtained by AD. The as-deposited coating was composed of cubic-YSZ nanocrystallites of ~10 nm size. The potentiodynamic test indicated that the YSZ coated Al alloy had much lower corrosion current densities (2 nA/$cm^2$) by comparison to uncoated sample and exhibited a passive behavior in anodic branch. Particularly, a pitting breakdown potential could not be identified in $H_2SO_4$. EIS tests revealed that the impedance of YSZ coated sample was ${\sim}10^6{\Omega}cm^2$ in NaCl and ${\sim}10^7{\Omega}cm^2$ in $H_2SO_4$, which was about 3 or 4 orders of magnitude higher than that of uncoated sample. Consequently, the corrosion resistance of Al alloy had been significantly enhanced by the YSZ coating.

• 한국표면공학회지
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• 제47권6호
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• pp.330-334
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• 2014

In this study, the Zn-Mg alloy coatings with various Mg contents were deposited using an unbalanced magnetron sputtering process. Their surface microstructure, chemical composition, phase, and corrosion property were investigated. The microstructure of the Zn-Mg coatings changed from porous microstructure to dense one with increasing Mg contents in the coatings. As Mg contents in coatings increased, intermetallic phases such as $Mg_2Zn_{11}$ and $MgZn_2$ were detected from X-ray diffraction (XRD) results. The corrosion resistance of the Zn-Mg alloy coatings was investigated quantitatively using electrochemical impedance spectroscopy (EIS) measurement with 3.5% NaCl solution. The results of EIS measurement showed that the charge transfer resistance and the phase angle of the Zn-Mg alloy coatings were increased from $162.1{\Omega}{\cdot}cm^2$ to $558.8{\Omega}{\cdot}cm^2$ and from about $40^{\circ}$ to $60^{\circ}$ with increasing Mg contents from 5.1 wt.% to 15.5 wt.% in the coatings. These results demonstrate that the Zn-Mg coatings with increasing Mg contents showed an enhanced corrosion resistance.

• 비파괴검사학회지
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• 제23권4호
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• pp.322-327
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• 2003

초고밀도 자기기록 reading head로 사용되고 있는 거대자기저항(GMR, Giant Magnetoresistance) NiO 다층박막을 제작하고 이를 공기중에서 80 일간 자연산화시킨후, 형성된 산화층과 잔류응력 변화에 따른 NiO 스핀밸브 박막의 자기저항 특성을 연구하였다. $NiO(60nm)/Ni_{81}Fe_{19}(5nm)/Co(0.7nm)/Cu(2nm)/Co(0.7nm)/Ni_{81}Fe_{19}(7nm)$의 구조를 갖는 다층박막을 공기중에서 약 80일간 자연산화 시켰을 때, 자기저항비(MR)와 교환결합력$(H_{ex})$이 각각 4.9%와 110 Oe에서 7.3%와 170 Oe로 증가하였다. 이때, 스핀밸브박막의 비저항(P) 값은 $28{\mu}{\Omega}m$로 감소하였지만 박막의 비저항 값의 변화량$({\Delta}p)$는 크기변화가 거의 없는 것을 알 수 있었다. 그러므로, 자기저항비의 증가는 aging시간에 따른 비저항 값의 감소에 기인한 것으로 생각되며, 저항의 감소는 표면산화에 따라 전도전자의 반사율증가에 의한 것으로 사료된다. 또한 교환결합력의 증가는 반강자성체/자성체 박막사이 계면에서 발생한 잔류응력이 aging시간이 경과함에 따라 감소하여 특성이 강화된 것으로 생각된다.

• 통합자연과학논문집
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• 제5권4호
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• pp.237-240
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• 2012

In this study, PEDOT thin films polymerized with Iron(III)tosylate ($Fe(PTS)_3$) and grown on atomically smooth and highly dense 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM) surfaces by VPP method have been investigated. PEDOT thin films were synthesized on APS self-assembled $SiO_2$ wafer surface at two different concentrations (20 wt% and 40 wt%) and growth time (3 and 30 minutes), and then their sheet resistance were measured and compared. PEDOT thin films grown with 20 wt% $Fe(PTS)_3$ oxidant are highly conductive when compared with the film grown with 40 wt% $Fe(PTS)_3$, as ascertained by the measured sheet resistance values down to 0.06 ${\Omega}/cm$. It clearly suggests that 20 wt% is more effective oxidant concentration for VPP than 40 wt% even though the film grown with 40 wt% oxidant has better quality than the film with 20 wt% $Fe(PTS)_3$ does.

• 한국분말재료학회지
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• 제23권5호
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• pp.358-363
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• 2016

Noncontact direct-printed conductive silver patterns with an enhanced electrical resistivity are fabricated using a silver ink with a mixture of silver nanoparticles and nanoplates. The microstructure and electrical resistivity of the silver pattern are systematically investigated as a function of the mixing ratio of the nanoparticles and nanoplates. The pattern, which is fabricated using a mixture with a mixing ratio of 3(nanoparticles):7(nanoplates) and sintered at $200^{\circ}C$ shows a highly dense and well-sintered microstructure and has a resistivity of $7.60{\mu}{\Omega}{\cdot}cm$. This originates a mutual synergistic effect through a combination of the sinterability of the nanoparticles and the packing ability of the nanoplates. This is a conductive material that can be used to fabricate noncontact direct-printed conductive patterns with excellent electrical conductivity for various flexible electronics applications, including solar cells, displays, RFIDs, and sensors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1518-1520
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• 2001

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 mV and 42.6 mA/$cm^2$ respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.203-207
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• 2003

Ion implantation has been shown to significantly alter the surface properties of polymers. Polycarbonate(PC) and Polyimide(PI) were irradiated with 50keV $N^+$, $Xe^+$ ions to the fluences of $1{\times}10^{16}{\sim}3{\times}10^{17}\;cm^2$. The ion beam-induced modification of the electrical conductivity and the related structural features have been studied for polymers. The beam-induced chemical and structural modifications have been investigated by using X-ray Phooelectron Spectroscopy(XPS) and Fourier Transform-Infrared Spectroscopy(FT-IR), while the modification of the electrical properties was followed by performing a complete set of sheet resistance measurements. Samples irradiated at higher fluence showed a good conductivity, with a saturation value of $10^7{\Omega}/sq$. The XPS data demonstrate that the modification of the electrical properties is due to the progressive formation with increasing ion fluence of a dense amorphous carbon network, while PF-IR data reveal that material degradations through bond breaking are the main effects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.63-66
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• 2002

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.