• 생명과학회지
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• 제10권5호
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• pp.456-466
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• 2000

Aquaperin 4 (AQP4) is the mercurial water channel expressed abundantly in brain, especially the region related with cerebrospinal fluid reabsorption and osmoregulation. The primary structure of AQP4 water channel was elucidated but the molecular mechanism of AQP4 channel regulation is still unknown. To investigate the possible regulation of AQP4 water channel by phosphorylation via various protein kinases, osmotic water permeability of AQP4 expressed in Xenopus oocytes was measured by videomicroscopy technique. Forskolin (10 $\mu$M) did not affect osmotic water permeability of oocytes injected with AQP4 cRNA, excluding the regulation of AQP4 water cnannel by protein kinase A. Osmotic water permeability (P아래첨자) of AQP4-expressed oocytes was ingibited by the pretreatmeat of BAPTA/AM (up to 500$\mu$M), an intracellular Ca윗첨자 chelator, and calmidazolium (100$\mu$M), a specific Ca윗첨자/calmodulin antagonist, in a dose-dependent manner. The inhibition of osmotic water permeability (P아래첨자) by the calmidazolium treatment was completely reversed by the addition of calyculin A (0.1$\mu$M), a nonspecific phosphatase inhibitor. Phorbol 12-myristate 13-acetate (PMA), a protein kinase C activator, had biphasic effects on osmotic water permeability in AQP4 cRNA injected oocytes depending on its concentration; 21% increase by 100 nM PMA, 35% decrease by 1$\mu$M PMA. These effects were reversed with 2$\mu$M staurosporine, a nonspecific PKC inhibitor. These results suggest that phosphorylation of AQP4 water channel by Ca윗첨자/calmodulin kinase and protein kinase C might regulate the osmotic water permeability.

• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2005년도 추계학술대회 논문집
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• pp.80-84
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• 2005

Many important properties in colloidal systems are usually determined by surface charge ($\zeta$-potential) of the contacted solid surface. In this study, $\zeta$-potential of glass $\mu$-channel was evaluated from the electro-osmotic velocity distribution. The electro-osmotic velocity inside a glass $\mu$-channel was measured using a micro-PIV velocity field measurement technique. This evaluation method is more simple and easy to approach, compared with the traditional streaming potential technique. The $\zeta$-potential in the glass $\mu$-channel was measured for two different mole NaCl solutions. The effect of an anion surfactant, sodium dodecyl sulphate (SDS), on the electro-osmotic velocity and $\zeta$-potential in the glass surface was also studied. In the range of $0\∼6$mM, the surfactant SDS was added to NaCl solution in four different mole concentrations. As a result, the addition of SDS increases $\zeta$-potential in the surface of the glass $\mu$-channel. The measured $\zeta$-potential was found to vary from-260 to-70mV. When negatively charged particles were used, the flow direction was opposite compared with that of neutral particles. The $\zeta$-potential has a positive sign for the negative particles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.284-287
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• 1996

In this paper, we investigated the optical coupling characteristics for $K^{+}$ ion-exchanged diffused channel waveguide by using coupled-mode equations. In this case, the optical-power-dividing was observed at the waveguide-type optical coupler with 3[$\mu\textrm{m}$] line-width and, 6[$\mu\textrm{m}$] separation between channel waveguides in which interaction lengths were 1 and 3[mm], respectively, On the basis of that we deformed simulation for $Ag^{+}$ ion-exchanged diffused channel waveguide. As a result of simulation, the optical-power-dividing was shown at the waveguide-type optical coupler wish 3[$\mu\textrm{m}$] line-width, 6[$\mu\textrm{m}$] separation between channel waveguides and 0.11[mm] interaction length.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• 한국정밀공학회지
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• 제27권2호
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• pp.29-33
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• 2010

We have investigated fs-laser ablation as well as optoperforation threshold of PDMS (Polydimethylsiloxane) thin lid cover on ${\mu}$-channel with changing the flow medium from water to hemoglobin. The ablation threshold is found to be independent of both PDMS thin film thickness and flow medium, but the optoperforation threshold is dependent on the films thickness. The observation that the ablation process is well described with simple two-temperature model supposed that the cover lid PDMS of $\mu$-channel be processed with minimized thermal effects by fs-laser with low laser fluence.

• 전기의세계
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• 제27권4호
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.896-898
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• 2009

The printed electrodes of organic thin-film transistors (OTFTs) were fabricated by screen printing using nanoparticle silver pastes. The screen printed OTFT corresponds to channel lengths between 7.6 to 82.6 ${\mu}m$ (designed L=10 to 80 ${\mu}m$) on the $150{\times}150mm^2$ paper. The channel length deviations for 40 to 80 ${\mu}m$ patterns were less than 5 %. However, the channel lengths for 10 to 30 ${\mu}m$ patterns were increased by 20 %. The screen printed bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) OTFTs obtained had a field-effect mobility as large as 0.08 (${\pm}0.02$) $cm^2$/Vs, an on/off current ratio of $10^5$ and a subthreshold slope of 1.95 V/decade.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• 대한전자공학회논문지SD
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• 제46권11호
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• pp.40-47
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• 2009

본 논문에서는 mixed driving 방식을 이용하고 이미지 개선을 위해 $\gamma$-correction을 수행하는 QVGA급 TFT-LCD driver IC의 Source Driver를 설계한다. 240 RGB ${\times}$ 320 dots resolution을 가진 source driver는 720개의 채널을 통해 TFT-LCD 패널을 구동하고 18-bit의 RGB 데이터를 사용하여 26만 color를 수행한다. Mixed driving 방식은 종전의 좋은 구동력을 가진 channel amp. driving 방식에 저면적이 가능한 gray amp. driving 방식을 혼합한 방식으로서, 영상이 동일 색상을 가지는 worst case를 감지하여 구동력을 높여주는 방식을 사용함으로써 적절한 구동력과 저면적을 구현하는 설계방식이다. 본 Source Driver는 $0.35{\mu}m$ Magnachip embedded DRAM 공정을 사용하여 설계하였으며 Hspice를 사용하여 시뮬레이션을 하였다. 실험결과, 기존의 gayscale driving 방식에서는 hsync time을 만족시키지 못하는데 비해 $17{\mu}s$의 channel 구동시간으로 충분한 timing margin을 가지고 액정 channel 을 구동할 수 있으면서, 구동 앰프 78개와 제어회로를 갖는 저면적으로 설계되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.63-64
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and $25\;{\mu}m$) and channel lengths (70, 30, and $5\;{\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.