• 대한전자공학회논문지
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• 제26권1호
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• pp.62-68
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• 1989

본 논문에서는 아날로그/디지탈 회로 구성시 입출력부는 바이폴라 소자로 내부의 논리회로 부분은 CMOS 소자로 높은 내압을 요구하는 부분에는 DMOS 소자를 이용할 수 있는, BCDMOS 공정 기술개발을 하고자 하였다. BCDMOS 제작 공정은 폴리게이트 p-well CMOS 공정을 기본으로 하였고, 소자설계의 기본개념은 공정흐름을 복잡하지 않게 하면서 바이폴라, CMOS, DMOS 소자 각각의 특성을 좋게하는데 두었다. 실험결과로서 바이폴라 npn 트랜지스터의 $h_{FE}$ 특성은 320(Ib-$10{\mu}A$)정도이며, CMOS 소자에서는 n-채자에서는 항복전압이 115V이상의 특성을 얻을 수 있었다.

• The Korean Journal of Physiology and Pharmacology
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• 제4권6호
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• pp.463-469
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• 2000

It has been well known that 4-aminopyridine (4-AP) has an excitatory effect on vascular smooth muscle due to causing membrane depolarization by blocking $K^+-channel$. However, we observed that 4-AP had an inhibitory effect on the mesenteric artery of rat. Therefore, we investigated the mechanism of 4-AP-induced vasorelaxation. The mesenteric arcuate artery and its branches were isolated and cut into ring. The ring segment was immersed in HEPES-buffered solution and its isometric tension was measured. 4-AP $(0.1{\sim}10\;mM)$ induced a concentration-dependent relaxation, which was unaffected by NO synthase inhibitor, $N^G-nitro-L-arginine$ methylester $(100\;{\mu}M)$ or soluble guanylate cyclase inhibitor, methylene blue $(100\;{\mu}M).$ Glibenclamide $(100\;{\mu}M)$, ATP-sensitive $K^+$ channel blocker, did not exert any effect on the 4-AP-induced vasorelaxation. 4-AP relaxed the sustained contraction induced by 100 mM $K^+$ or $Ca^{2+}$ ionophore, A23187 $(100\;{\mu}M)$ in a dose-dependent manner. In addition, 4-AP significantly decreased the phasic contractile response to norepinephrine in the absence of extracellular $Ca^{2+}$. However, 4-AP did not block the $^{45}Ca$ influx of rat aorta. From the above results, we suggest that 4-AP may not block the $Ca^{2+}$ influx through $Ca^{2+}-channel,$ but act as a nonspecific vasorelaxant in arterial smooth muscle.

• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2004년도 Proceedings of 2004 Korea-Japan Joint Seminar on Particle Image Velocimetry
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• pp.125-134
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• 2004

The improvement of artificial respiration method has brought about the decrease in mortality of pulmonary diseases patients. Various respiratory curative methods, inclusive of HFOV (High Frequency Oscillatory Ventilation), have been developed for more effectual and less harmful management of acute respiratory failure. However, the mechanism of gas transfer and diffusion in a bronchiole has not yet been clarified in detail. As a first approach to the problem, we measured oscillatory flows in a Y-shaped micro-channels as bronchiole model by micro Particle Image Velocimetry(micro PIV). In order to establish the fundamental technique of PIV measurements on oscillatory air flow in a micro-channel, we used about 500-nm-diameter incense smoke particles, a diode laser, a high speed camera including an objective lens, and a HFOV, which is effective technique for medical care of pulmonary disease patients, especially, infants. The bronchiole model size is that parent tube is $500\{mu}m$ width and $500\{mu}m$ depth, and daughter tubes are $450\{mu}m$ width and $500\{mu}m$ depth. From this study made on the phenomenon of fluid in micro size bronchus branch of a lung, we succeeded to get time series velocity distribution in a micro scale bronchial mode. The experimental results of velocity distribution changing with time obtained by micro PIV can give fundamental knowledge on oscillatory airflow in micro-channel.

• 한국광학회지
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• 제12권4호
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• pp.320-326
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• 2001

본 논문에서는 출력 도파로의 한쪽 폭을 변화 시켜 다양한 광파워 분리비를 갖는 비대칭형 Y-분리기를 BK7 유리에 $Ag^+-Na^+$이온교환법을 이용하여 제작하였다. FD-BPM을 이용하여 한쪽 출력 도파로의 폭에 따라 다양한 출력 파위를 얻을 수 있는 비대칭형의 Y-분리기의 도파특성을 살펴보았다. 그리고 이온교환에 의해 형성된 채널형 도파로의 굴절률 분포를 결정하고 채널형 도파로를 제작하여 도파특성도 살펴보았다. 비대칭형 Y-분리기는 한 쪽 도파로의 폭을 $4{\mu}m$에서 $6{\mu}m$까지 변화시키면서 제작하고 특성을 파악하였다.

• 대한기계학회논문집A
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• 제30권2호
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• pp.157-163
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• 2006

Our research dealt with micro fabrication using micro forming process. The goal of the research was to establish the limit of forming process concerning the size of forming material and formed shape. Flat-rolled ultra thin metallic foils of pure copper(3.0 and $1.0{\mu}m$ in thickness)and stainless steel($2.5{\mu}m$ in thickness) were used for forming material. We obtained the various shapes of micro channels as using designed forming process. $12-14{\mu}m$ wide and $9{\mu}m$ deep channels were made on $3.0{\mu}m$ thick foil and $6{\mu}m$ wide and $3{\mu}m$deep channels were made on $1.0{\mu}m$ thick foil. Si wafer die for forming was fabricated by using etching technique. And the relation of etching time and die dimension was investigated for fabricating precisely die groove. For the forming, die and metal foil were vacuum packed and the forming was conducted with a cold isostatic press. The formed channels were examined in terms of their dimension, surface qualities and potential for defects. Base on the examinations, formability of ultra thin metallic foil was also discussed. Finally, we compared the forming result with simulation. The result of research showed that metal forming technology is promising to produce micro parts.

• 전자공학회논문지A
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• 제33A권10호
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• 한국표면공학회지
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• 제49권2호
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• pp.152-158
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• 2016

We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to $50{\mu}m$ which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel ($10{\sim}50{\mu}m$) graphene FETs for 20 s, $R_c$ decreased from 2.4 to $1.15k{\Omega}{\cdot}{\mu}m$. It is understood that this improvement in $R_c$ is attributed to the formation of $sp^3$ bonds and dangling bonds by the plasma. However, when the channel length of the FETs decreased down to 200 nm, the drain current ($I_d$) decreased upon the plasma treatment because of the significant increase of channel $R_{sh}$ which was attributed to the atomic structural disorder induced by the plasma across the transfer length at the edge of the channel region. This study suggests a practical guideline to reduce $R_c$ using various plasma treatments for the $R_c$ sensitive graphene and other 2D material devices, where $R_c$ is traded off with $R_{sh}$.

• 한국정보과학회논문지:시스템및이론
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• 제34권12호
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• pp.630-640
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• 2007

센서 네트워크의 응용 범위가 점차 넓어지면서 군사 분야나 방사능 감지와 같이 실시간성을 요구하는 응용분야가 생겨나게 되었다. 하지만 기존의 센서 운영체제 연구는 효율적인 자원 활용에 초점을 두고 연구가 진행되었기 때문에 실시간성을 만족시켜 주기 어려운 구조를 가지고 있다. 본 논문에서는 정시성을 보장하는 실시간 분산 객체 TMO 모델을 센서 네트워크의 제한된 자원 환경에 알맞도록 경량화 시킨 ${\mu}TMO$ 모델을 제안한다. ${\mu}TMO$ 모델을 이용한 실시간 센서 네트워크 운영체제를 개발하기 위하여 한국전자통신연구원에서 개발한 센서 노드용 운영체제인 Nano-Q+를 이용하였다. Nano-Q+의 타이머 모듈을 높은 해상도를 가질 수 있도록 수정하였으며, EDF(Earliest-Deadline-First)기반의 실시간 스케줄러에 CST(Context Switch Threshold)와 PAS(Power Aware Scheduling) 기법을 적용하여 센서 노드에 적합한 실시간 스케줄러로 변경하였다. ${\mu}TMO$ 모델을 지원하기 위해 채널 기반의 통신 수단인 ITC-Channel을 새롭게 구현하였으며, 주기적인 스레드를 관리하는 WTMT(Watchdog TMO Management Task) 모듈을 구현하여 SpM 스레드를 주기에 맞게 실행할 수 있도록 하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.197-198
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• 2011

• 전기학회논문지P
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• 제54권3호
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• pp.148-154
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• 2005

Various methods for analyze optical components which are necessary before the fabrication of optical circuit component and as its applications, designing method of Wavelength Division Multiplexer(WDM) filter using arrayed-waveguide grating(AWG) is paper. In the case of analyzing uniform optical waveguide, effective index method(EIM), harmonic expansion method are used, and in the case of non-uniform optical waveguide, beam propagation method(BPM) are used. In this paper, to use arrayed-waveguide grating as WDM filter of centered wavelength of $1.55{\mu}m$ and wavelength spacing of 0.8nm, all of the parameter of AWG is calculated by the HEM and the BPM using EIM. As a result of calculation, free spectral range is 12.8nm, focal length $9336.55{\mu}m$, path difference $129.36{\mu}m$ and the number of slab waveguide 91 when the distance of core center to center on row land circle is $20{\mu}m$.