• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.63-70
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• 1996

Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, $SiH_{2}Cl_{2}\;/\;H_{2}$ gas mixtures and various process parameters including $H_{2}$ prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of $900^{\circ}C$. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about $200{\AA}/decade$ in the structure of undoped Si / $n^{+}-Si$ substrate.

• Elastomers and Composites
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• v.44 no.4
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• pp.436-441
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• 2009

Semi flexible polyesters containing aromatic rings and pentamethylene groups in the main chain were synthesized by direct polycondensation reaction. The structures of these polymers were investigated by $^1H$-NMR and FT-IR and the phase transition behavior was characterized with DSC, TGA and crossed polarizing microscope. Inherent viscosities ($\eta_{inh}$) of polymers measured in phenol/p-chlorophenol/1,1,2,2-tetrachloroethane were between 0.46 and 1.30 dL/g. As increasing the linearlity of rigid moieties in polyster, melting transition temperatures ($T_m$) increased and solubilities in organic solvents decreased. P-H, P-mH and P-4H of the polymers formed turbid melts that showed stir-opalescence and nematic phase at the broad anisotropic region, However, P-R, P-C and P-2B did not exhibit any textures related to the liquid crystallinity.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.783-791
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• 1994

Piezoelectric ZnO thin films were deposited on 7059 glass substrate by rf magnetron sputtering. The effects of deposition parameter, such as rf power, gas pressure and $O_{2}$/Ar gas ratio, on the crystallinity and electrical properties of the deposited ZnO thin films were studied. It was found that the deposition rate was higher than the previously reported values. ZnO films were suitable for SAW filter since a standard deviation of XRD (002) peak rocking curve was less than $6^{\circ}$. ZnO thin films, which were deposited at $O_{2}$/Ar ratio larger than 25%, showed high resistance. SAW filter was fabricated using ZnO film, of which thickness was 0.25 of the wavelength of the propatating surface acoustic wave. The measured frequency response was consistent with the calculated one. The SAW filter had center frequency 39.08 MHz, phase velocity 2501 m/sec and insertion loss 29 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.5
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• pp.986-991
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• 2016

In this study, we prepared ITO thin films on $Nb_2O_5/SiO_2$ double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ $400^{\circ}C$). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at $400^{\circ}C$ showed the most excellent value of resistivity and sheet resistance as $3.03{\times}10^{-4}{\Omega}{\cdot}cm$, $86.6{\Omega}/sq.$, respectively. In results of optical properties, average transmittance was increased but chromaticity ($b^*$) was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity ($b^*$) of ITO thin film deposited at $400^{\circ}C$ exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced $Nb_2O_5/SiO_2$ double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.170-175
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• 2004

The ferroelectric (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ thin films were fabricated by sol-gel method using Y-acetate, Yb-acetate, and Mn-acetate as raw materials. The stable (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ precursor solution (sol) was prepared through the reflux process with acetylaceton as a catalyst and coated on Si(100) substrate by spin coating. The heat treatment temperature and, Rw ($H_2O$/alkoxide moi ratio) dependence on crystallinity of thin films were studied. The lowest temperature for obtaining YbMn $O_3$phase and the optimum heat-treatment conditions were proved as at 7$50^{\circ}C$ and 80$0^{\circ}C$, respectively. The hexagonal YbMn $O_3$with c-axis preferred orientation could be obtained at Rw=1 condition. The remanent polarization for the thin films of x=0 or 1 was about 200 nC/㎤ while, for the specimens ot 0< x< 1, were 50∼100 nC/$\textrm{cm}^2$.

• Korean Journal of Food Science and Technology
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• v.52 no.1
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• pp.31-39
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• 2020

The effects of heat-moisture treatment (HMT) on the functional properties of high amylose rice starches (HARSes) purified from Korean rice varieties (A-type Goami and Singil and B-type Dodamssal and Goami2) were investigated. HMT was accomplished with moisture contents of 18 and 27% and heated at 100℃ for 16 h. While the amylose content, swelling power and solubility decreased after HMT, the water binding capacity and resistant starch (RS) content increased with increasing moisture content after HMT. The X-ray diffraction patterns of all HARSes did not change after HMT, but a decrease in the intensity of peak at 2θ=5° was observed in B-type HMT HARSes. While the starch granules aggregated after HMT, their shape and size remained unchanged. B-type HARSes exhibited higher gelatinization temperatures and lower pasting viscosities than A-type HARSes following HMT. The results, thus, suggest that while the crystalline intensity of B-type Dodamssal and Goami2 rice starches did not change after HMT, the RS content, water binding capacity, and pasting temperatures of all HARSes increased with increasing moisture content after HMT.

• Korean Journal of Food Science and Technology
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• v.48 no.2
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• pp.165-171
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• 2016

Physicochemical properties of waxy maize flours prepared by hydrothermal and enzymatic treatments were evaluated. Waxy maize flours were hydrothermally treated using heat-moisture treatment (HMT) and annealing (ANN) and enzymatically treated using commercial enzymes (cellulase, proteinase, and pectinase). The HMT-modified waxy maize flours had low water absorption index (WAI), melting enthalpy, viscosity, and crystallinity. However, ANN-modified and enzymatically modified waxy maize flours had high WAI, melting enthalpy, and viscosity. X-ray diffraction analysis of ANN-modified and enzymatically modified waxy maize flours revealed a typical A-type pattern and displayed sharper crystalline peaks than those observed for the control groups (native waxy maize flours). In contrast, the crystallinity of HMT-modified waxy maize flours were decreased by hydrothermal treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• KSBB Journal
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• v.22 no.2
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• pp.91-96
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• 2007

The saccharogenic liquid (SFW) obtained by the enzymatic saccharification of food wastes was used as a medium for production of bacterial cellulose (BC). The enzymatic saccharification of food wastes was carried out by the cultivation supernatant of Tricoderma inhamatum KSJ1 culture. Acetobacter xylinum KJ1 was employed for the BC production culture. Under the scaled-up aeration condition of 1.0 vvm, 5.64 g/L of BC was produced in 3 days cultivation in 50 L air circulation bioreactor using SFW medium with addition of 0.4% agar. The productivity was similar to that of 10 L air circulation bioreactor (5.84 g/L). This cultivation method with 50 L air circulation bioreactor decreasing shear stress and increasing oxygen transfer coefficient ($k_La$) was very useful in BC mass production. The physical properties, such as morphology, molecular weight, crystallinity, and tensile strength of BC produced by the static culture (A), the air circulation culture using 10 L bioreactor (B) and 50 L bioreactor (C) were investigated. The number average molecular weight of BCs produced under the different culture conditions (A-C) showed 2,578,000, 1,975,000, and 1,809,000, respectively. Tensile strength was 1.72 $kg/mm^2$, 1.19 $kg/mm^2$, and 1.18 $kg/mm^2$, respectively. All of the BCs had a form of cellulose I representing pure cellulose. The relative degree of crystallinity showed the range of 86.2$\sim$87.8%. BC production by the air circulation culture mode brought more favorable results in terms of the physical properties and its ease of scale-up. Therefore, it is expected that the new BC production method, the air circulation culture using SFW, would contribute greatly to BC-related manufacturing.