• 제목/요약/키워드: $\b{ZnS}$

검색결과 442건 처리시간 0.034초

Microstructure Analysis of Y-Ba-Cu-O thin Films Grown on STO Substrates with Controlled ZnO Nanorods (ZnO 나노막대가 형성된 STO기판에 증착한 Y-Ba-Cu-O 박막의 미세구조 분석)

  • Oh, S.K.;Jang, G.E.;Tran, H.D.;Kang, B.W.;Kim, K.W.;Lee, C.Y.;Hyun, O.B.
    • Progress in Superconductivity
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    • 제11권1호
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    • pp.47-51
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    • 2009
  • For many large-scale applications of high-temperature superconducting materials, large critical current density ($J_c$) in high applied magnetic fields are required. A number of methods have been reported to introduce artificial pinning centers in $YBa_2Cu_3O_{7-{\delta}}$ films for enhancement of their $J_c$. We studied the microstructures and characteristic of $YBa_2Cu_3O_{7-{\delta}}$ films fabricated on $SrTiO_3$ (100) substrates with ZnO nanorods as pinning centers. Au catalyst nanoparticles were synthesized on STO substrates with self assembled monolayer to control the number of ZnO nanorods. The density of Au nanoparticles is approximately $240{\sim}260{\mu}m^{-2}$ with diameters of $41{\sim}49nm$. ZnO nanorods were grown on STO by hot-walled PLD with Au nanoparticles. Typical size of ZnO nanorod was around 179 nm in diameter and $2{\sim}6{\mu}m$ in length respectively. YBCO films deposited directly on STO substrates show the c-axis orientation, while YBCO films with ZnO nanorods exhibit any mixed phases without any typical crystal orientation.

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Unbalanced B-field 인가에 따른 HIPIMS (high power impulse magnetron sputtering) 증착 Al:ZnO 박막 특성 연구

  • Park, Dong-Hui;Yang, Jeong-Do;Choe, Ji-Won;Choe, Won-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.193-193
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    • 2010
  • HIPIMS(High sputtering impulse magnetron sputtering)은 수십 ${\mu}s$의 짧은 pulse 동안 수kw의 매우 높은 파워를 인가할 수 있어 밀도 $10^{13}/cm^3$ 이상의 고밀도 플라즈마 방전이 가능하여 스퍼터된 타겟 이온들의 이온화율이 매우 높은 특징을 가진다. HIPIMS를 통해 증착한 박막의 경우 매우 치밀한 조직을 가지고 있어 기존 DC, Pulsed DC, RF 증착을 통한 박막에 비해 우수한 물성을 보여준다. 본 실험에서는 대면적의 고품위 Al:ZnO 박막을 증착하기위하여 HIPIMS 증착법을 사용하였다. 1000mm폭 타겟상에서 균일한 증착을 위하여 Balanced B-field, Unbalanced field를 각각 인가하여 실험하였다. 시뮬레이션을 통하여 타겟 중심부와 가장자리의 자기장을 결정하였으며, target edge에서의 증착율과 cathode erosion 방지를 위하여 원형 트랙형으로 보조 자석을 설치하였다. $Al_2O_3$(2wt%)가 첨가된 planar target을 사용하였고, power는 700 W~2 kW, 그리고 pulse 폭은 $50-150 {\mu}s$정도로 변화시켜 가면서 상온에서 증착하였다. 플라즈마 가스로는 Ar만을 사용하여 두께는 60-100 nm정도로 증착하였다. Plasma emission monitoring을 통해 측정한 결과 Balanced B-field 에 비해 Unbalanced B-field 조건 에서 스퍼터된 이온들의 균일도가 우수하였으며 증착된 박막의 균일도 또한 증가하였다.

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Synthesis of the Water Dispersible L-Valine Capped ZnS:Mn Nanocrystal and the Crystal Structure of the Precursor Complex: [Zn(Val)2(H2O)]

  • Hwang, Cheong-Soo;Lee, Na-Rae;Kim, Young-Ah;Park, Youn-Bong
    • Bulletin of the Korean Chemical Society
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    • 제27권11호
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    • pp.1809-1814
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    • 2006
  • The L-Valinate anion coordinating zinc complex, [$Zn(val)_2(H-2O)$], was isolated and structurally characterized by single crystal X-ray crystallography. The crystal possess orthorhombic symmetry with a space group $P2_12_12_1$, Z = 4, and a = 7.4279(2)$\AA$, b = 9.4342(2)$\AA$, c =20.5862(7)$\AA$ respectively. The compound features a penta-coordinate zinc ion in which the two valine anion molecules are directly coordinating the central zinc metal ion via their N (amine) and O (carboxylate) atoms, and an additional coordination to zinc is made by water molecule (solvent) to form a distorted square pyramidal structure. In addition, further synthesis of the valine capped ZnS:Mn nanocrystal from the reaction of [$Zn(val)_2(H-2O)$] precursor with $Na_2S$ and 1.95 weight % of $Mn^{2+}$ dopant is described. Obtained valine capped nanocrystal was water dispersible and was optically characterized by UV-vis and solution PL spectroscopy. The solution PL spectrum for the valine capped ZnS:Mn nanocrystal showed an excitation peak at 280 nm and a very narrow emission peak at 558 nm respectively. The measured and calculated PL efficiency of the nanocrystal in water was 15.8%. The obtained powders were characterized by XRD, HR-TEM, and EDXS analyses. The particle size of the nanocrystal was also measured via a TEM image. The measured average particle size was 3.3 nm.

Marginal Zinc Deficiency Affects Biochemical and Physiological Parameters in Beef Heifer Calves

  • Engle, T.E.;Nockels, C.F.;Hossner, K.L.;Kimberling, C.V.;Toombs, R.E.;Yemm, R.S.;Weaber, D.L.;Johnson, A.B.
    • Asian-Australasian Journal of Animal Sciences
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    • 제10권5호
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    • pp.471-477
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    • 1997
  • A study detennined whether certain biochemical and physiological variables were altered during marginal Zn deficiency. Ten weaned crossbred Hereford Angus heifer calves, weighing $163{\pm}2kg$, were utilized. Five calves were fed a Zn - deficient (- Zn) brome-alfalfa hay diet containing 17 mg Zn/kg diet DM, and five calves were fed a Zn-adequate (+Zn) diet with 23 mg Zn/kg diet DM from $ZnSO_4$ added to the - Zn diet (total diet, 40 mg Zn/kg diet DM), for 32 d. At 21 d the - Zn calves had a reduction (p < .05) in feed efficiency. By 25 d, plasma Zn and alkaline phosphatase concentrations were reduced (p < .05) in the - Zn calves. Blood urea nitrogen, glucose, insulin, IGF-I, Cu plasma concentration and Zn and Cu concentrations of red blood cell (RBC) and liver were not altered (p > .05) by the - Zn diet through 25 d. In response to a single i. m. injection of dexamethasone (20 mg) on d 25, calves fed the two dietary Zn amounts showed no changes (p > .05) in plasma or RBC Zn and Cu concentrations, serum IGF-I, insulin, and glucose when measured at 6, 12, 24, 48, 72, and 96 h after injection. In response to an intradermal injection of phytohemagglutinin on d 30, cell mediated immune (CMI) response was reduced (p < .05) in the - Zn calves. These observations indicate that during a marginal Zn deficiency in calves, there was a decrease in feed efficiency, plasma Zn, serum alkaline phosphatase, and CMI response.

Corrosion Resistance of the Roll Formed Steel Bolts with the Various Types of Coating Methods (2) (다양한 코팅 방법에 따른 전조한 강 볼트의 내부식성 (2))

  • Mamatov, S.;Hamrakulov, B.;Son, Y.H.;Kim, I.
    • Transactions of Materials Processing
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    • 제28권2호
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    • pp.77-82
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    • 2019
  • Corrosion occurs well on surface of roll formed and Zn alloy subsequently electro-deposited on steel bolt under wet condition. In this study, variations in corrosion resistance were investigated through the measurement of polarization curves on steel bolts which were roll formed and subsequently coated with various types of coating methods. According to the measured polarization curve, Ni-P electroless deposits on roll formed steel increased the resistance to corrosion. The corrosion resistance of Zn alloy powder coated steel bolt was found to be better than that of Zn-Ni electro-deposited sample.

A comparative analysis of deep level emission in the ZnO layers deposited by various methods (다양한 방법으로 성장된 ZnO layer의 Deep level emission에 대한 비교 분석)

  • Ahn, C.H.;Kim, Y.Y.;Kim, D.C.;Kong, B.H.;Han, W.S.;Choi, M.K.;Cho, H.K.;Lee, J.H.;Kim, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.102-103
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    • 2008
  • Magnetron Sputtering, MOCVD, Thermal Evaporation에 의해 성장된 ZnO layer에 대한 Dependency Temperature Photoluminescence (PL)를 이용하여 비교 분석을 통해 Deep level emission에 대해 연구하였다. Sputter에 의해 성장된 ZnO 박막은 Violet, Green, Orange-red 영역의 $Zn_i$, $V_o$, $O_i$의 defect에 의한 Deep level emission을 보였고, MOCVD에 의해 성장된 박막은 비교적 산소양이 낮은 성장 조건에서는 blue-green 영역에서, 산소양이 높은 조건에서의 박막은 Orange-red 영역의 Deep level emission을 보였다. Blue-green 영역에서의 emission은 온도가 증가함에 따라 다른 Barrier를 보였는데, 이는 $V_{Zn}$$V_o$에 의한 것임을 알 수 있었다. 한편, ZnO nanorods는 $V_o$에 의한 Green 영역에서의 Deep level emission을 보였다.

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The sealing Characteristics of sealing glasses and Mn-Zn single crystal ferrite (봉착용 유리와 Mn-Zn 단결정 Ferrite와의 봉착특성에 관한 연구)

  • Yun, Seong-Gi;Han, Joong-Hee;Gang, Won-Ho
    • Korean Journal of Materials Research
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    • 제1권4호
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    • pp.221-228
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    • 1991
  • In this study we have investigated the sealing characteristics of glasses suitable for producing the magnetic gap of the ferrite head cores which have been widely used for VTR and computer magnetic heads. $PbO-B_2O_3$ g1asses were evaluated by measuring microhardness, thermal expansion coefficient and sliding wear resistance. Concentration distribution of elements at the interface was observed by WDS. wettability was measured by high temperature microscopy. The results were as follows ; 1. In sealing glasses of $PbO-B_2O_3$ system, thermal expansion coefficient and wear volume were increased with increasing PbO content, and were decreased with increasing $B_2O_3$ content. 2. The contact angle of $PbO-B_2O_3$ Systems was mainly influenced by PbO content. 3. The sealing temperature showed a tendency to decrease proportionally with the increase of the coefficient of thermal expansion. 4. The diffusion at the interface between Mn-Zn single crystal ferrite and sealing glasses of $PbO-B_2O_3$ system was dominated by small amount of diffusion of ferrite content into glass part, which was very little affected by sealing heat treatment time.

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Enhanced pH Response of Solution-gated Graphene FET by Using Vertically Grown ZnO Nanorods on Graphene Channel

  • Kim, B.Y;Jang, M.;Shin, K.-S.;Sohn, I.Y;Kim, S.-W.;Lee, N.-E
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.434.2-434.2
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    • 2014
  • We observe enhanced pH response of solution-gated field-effect transistors (SG-FET) having 1D-2D hybrid channel of vertical grown ZnO nanorods grown on CVD graphene (Gr). In recent years, SG-FET based on Gr has received a lot of attention for biochemical sensing applications, because Gr has outstanding properties such as high sensitivity, low detection limit, label-free electrical detection, and so on. However, low-defect CVD Gr has hardly pH responsive due to lack of hydroxyl group on Gr surface. On the other hand, ZnO, consists of stable wurtzite structure, has attracted much interest due to its unique properties and wide range of applications in optoelectronics, biosensors, medical sciences, etc. Especially, ZnO were easily grown as vertical nanorods by hydrothermal method and ZnO nanostructures have higher sensitivity to environments than planar structures due to plentiful hydroxyl group on their surface. We prepared for ZnO nanorods vertically grown on CVD Gr (ZnO nanorods/Gr hybrid channel) and to fabricate SG-FET subsequently. We have analyzed hybrid channel FETs showing transfer characteristics similar to that of pristine Gr FETs and charge neutrality point (CNP) shifts along proton concentration in solution, which can determine pH level of solution. Hybrid channel SG-FET sensors led to increase in pH sensitivity up to 500%, compared to pristine Gr SG-FET sensors. We confirmed plentiful hydroxyl groups on ZnO nanorod surface interact with protons in solution, which causes shifts of CNP. The morphology and electrical characteristics of hybrid channel SG-FET were characterized by FE-SEM and semiconductor parameter analyzer, respectively. Sensitivity and sensing mechanism of ZnO nanorods/Gr hybrid channel FET will be discussed in detail.

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Growth and photocurrent properties for ZnO Thin Film by Pulsed Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.74-75
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    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

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Growth of ZnO thin film by pulsed laser deposition and photocurrent study on the splitting of valance band (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • 제14권3호
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    • pp.160-168
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    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.