• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.909-914
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• 1995

From alumina powder and TEOS, $\alpha$-Al2O3/SiO2 composite powder for reaction-sintered mullite was synthesized by heterogeneous coagulation and surface coating, and investigated the mullitization reaction and sintering behavor of these powders. In $\alpha$-Al2O3/SiO2 composite powder prepared by heterogeneous coagulation, each alumina particles were surrounded by silica particles of 50~60 nm in size. And the alumina particles in composite powder prepared by surface coating were coated by uniform silica layer with thickness of 50 nm. In both methods, mullitization reaction was completed at 1$650^{\circ}C$ for 3h, and specimen sintered above 145$0^{\circ}C$ was about 95% fo the theoretical relative density. Mullite grains formed from the reaction with composite powders showed spherical shape with a size of 1~2${\mu}{\textrm}{m}$.

• Composites Research
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• v.25 no.6
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• pp.172-177
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• 2012

For the manufacture of low resistance Si-SiC composite, the properties of reaction sintering in the green body of various mixed ${\alpha}$-SiC powder size with the various carbon contents from 0wt% to 20wt% were investigated. The samples preparation was green body by CIP method under this condition, molten silicon infiltration process was conducted to reaction bonded silicon carbide. the results of sintered density, 3-point bending strength and resistance of analysis showed that varied carbon and silicon melt reacted to convert to fine ${\beta}$-SiC particle and the structure was changed to dense material. The amount of fine ${\beta}$-SiC particle was gradually increased as carbon content increase. According to mixed composite, it's mechanical and specific resistivity properties was strongly influenced by carbon content within 10wt% more then carbon content 10wt% was strongly influenced by phase transition.

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.67-74
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• 1986

To investigate the effects of unreacted silicon on the $\alpha$/$\beta$transfornation variation of morphology and mechanical strength of Sintered Reaction Bonded Silicon Nitride the mixtures of $\alpha$-$Si_3N_4$ and Si powder and Reaction Bonded Silicon Nitride were heat treated. The heat-treatments were performed in Ar atmosphere in order to inhibit the nitridation of silicon. In the mixtures heat-trated at 1$700^{\circ}C$ the amount of $\beta$-TEX>$Si_3N_4$transformed from $\alpha$-TEX>$Si_3N_4$was sigmoidally increased and the equiaxed $\alpha$-TEX>$Si_3N_4$grains elongated with the amount of silicon and heat treating time. And large $\beta$-TEX>$Si_3N_4$grains grown into silicon were observed. On the other hand there was no change in the heat-treatment of pure $\alpha$-TEX>$Si_3N_4$In case of the heat-treatment of RBSN the same phenomena due to the silicon appearing from the decomposition of $\alpha$-Smatte and needle were observed. From the three point bending test the strength of the sintered specimens with the and without 5wt% silicon addition had 53Kg/$mm^2$ and 73Kg/$mm^2$ respectively.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.61-65
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• 2000

${\beta}$-SiC powder and ${\alpha}$-SiC powders of different particle sizes, containing 5.7wt% $Al_2O_3$ and 4.3wt% $Y_2O_3$ as sintering aids, were hot-pressed at $1780^{\circ}C$ and subsequently annealed at $1950^{\circ}C$ to initiate grain growth. All the hot-pressed and annealed materials consisted of large SiC grains and elongated SiC grains. Typical hardness and fracture toughness of materials for spectacle lens cutting were 15.6 GPa and $5.7MPa{\cdot}m^{1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.320-326
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• 2000

Development of texture in SiC materials by hot-pressing and subsequent annealing was studied. Crystallographic texture type was characterized by measuring X-ray pole figures on the perpendicular plane to the hot-pressing direction. Observed all pole figures were nearly axially symmetric (fiber texture). In case of ${\beta}$-SiC materials, the pole density of basal plane (0004) increased as annealing time increased, in contrast, other planes (hkil) of ${\beta}$-SiC materials and all planes of ${\alpha}$-SiC materials nearly remained unchanged. In the case of ${\beta}$-SiC materials, therefore, a weak texture of (0001) plane at the normal direction took place in the 8h annealed samples, resulting from grian growth. The fracture toughness values of ${\alpha}$-SiC materials measured in both planes parallel and perpendicular to the hot-pressing direction were very similar. However, the fracture toughness of ${\beta}$-SiC materials measured parallel to the hot-pressing direction were higher than that measured perpendicular to the hot-pressing derection, relatively, because of the texture and the microstructure anisotropy.

• Journal of the Korean Ceramic Society
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• v.25 no.2
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• pp.143-153
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• 1988

In order to synthesize the partially stabilized $\alpha$-Sialon, A1N and Y2O3 were added to synthesized $\alpha$-Si3N4. The phase composition, mechanical properties, micro structure, etc, of the synthesized $\alpha$-Sialon were investigated. Partially stabilized $\alpha$-Sialon ceramics could be synthesized from the composition which was a little deviated from x=0.4, x=0.6 composition along the Si3N4.0.1Y2O3:0.9AlN tie line at 1750-180$0^{\circ}C$ for 2 hrs in N2 atmosphere. It is assumed that A1N is more closely related than Y2O3 to the formation of $\alpha$-Sialon, and that A1N is more easily dissolved into $\alpha$-structure than into $\beta$-structure. In Ya2O3-rich phase mechanical properties were observed to be poor because of formation of mellilite, grain growth, and thermal decomposition of $\alpha$-Sialon. The maximum values of M.O.R, KIC and hardness are 723 MPa, 4.5MN/㎥/2 and 19.3 GPa, respectively, and they were observed for the $\alpha$-Sialon ceramics sintered at 178$0^{\circ}C$.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1170-1175
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• 1999

The microstructures and mechanical properties of $Si_3N_4$ ceramics produced by nitridation and post-sintering using semiconductor-waste-Si sludge were investigated. Lots of microcracks were observed in the waste-Si powders which contained some amounts of amorphous $SiO_2$. The nitridation rate of waste-Si compacts showed lower value than that of commercial Si powder compacts. The nitridation rate was increased with increasing nitridation temperature and then the percent of nitridation at 1470$^{\circ}C$ showed 98%. The phases of $Si_3N_4$ in the reaction-bonded bodies were mixed with ${\alpha}$ and ${\beta}$-type, and small amounts of $Si_2N_2O$ phase while those after post-sintering were ${\beta}$-$Si_3N_4$ and ${\alpha}$-Sialon. The sample post-sintered at 1950$^{\circ}C$ showed the fracture toughness of 5.6 $^MPa{\cdot}m^{1/2}$ and the fracture strength of 497 MPa which were lower than those of sintered body using commercial Si powder possibly due to the formation of ${\alpha}$-Sialon phase.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.991-997
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• 2003

The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.

• Membrane Journal
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• v.14 no.4
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• pp.312-319
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• 2004

The porous SiO$_2$-B$_2$O$_3$ membrane was prepared from Si(OC$_2$$H_5$)$_4$-($CH_3$O)$_3$B-C$_2$$H_5$OH-$H_2O$ system by sol-gel method. In order to investigate the characteristics of this membrane, we examined that using BET, IR spectrophotometer, X-ray diffractometer, SEM and TEM. At $700^{\circ}C$, the surface area of SiO$_2$-B$_2$O$_3$ membrane was 354.398 $m^2$/, the median pore diameter was 0.0048 ${\mu}{\textrm}{m}$, and the particle size of SiO$_2$-B$_2$O$_3$ membrane was 7 nm. The separation properties of the gas mixture ($H_2$/$N_2$) through the SiO$_2$-B$_2$O$_3$ membrane was studied as a function of pressure. The real separation factor($\alpha$) of SiO$_2$-B$_2$O$_3$ membrane for $H_2$/$N_2$ gas mixture was 4.68 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$) and tail separation factor((equation omitted)) were increased as the pressure of permeation cell increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.546-546
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• 2013

Zinc silicate ($Zn_2SiO_4$) has been identified as a suitable host material for a wide variety of luminescent activators, such as transition metal and rare earth elements. In particular, manganese-activated $Zn_2SiO_4$ exhibits highly efficient photoluminescenceand cathodoluminescence, which allows this material to be used in fluorescent lamps and display applications. In this study, we investigated the green and yellow luminescence from Mn-doped $Zn_2SiO_4$ thin films that were synthesized using radio frequency magnetron sputtering followed by annealing at $600{\sim}1,200^{\circ}C$ The refractive index of the $Zn_2SiO_4$: Mn films showed normal dispersion behavior. It was found that the $Zn_2SiO_4$: Mn films annealed at $800^{\circ}C$ ossessed a mixture of alpha and beta phases. The obtained photoluminescence spectrum consisted of two emission bands centered at 525 nm in the green range and 574 nm in the yellow range. The green luminescence originates from the divalent Mn ions in alpha phase of $Zn_2SiO_4$, while the yellow luminescence comes from the divalent Mn ions in beta phase. The films annealed at and above $900^{\circ}C$ xhibited only the alpha phase. The broad PL excitation band was observed ranging from 220 to 300 nm with a maximum at around 243 nm.