• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.516-522
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.224-227
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• 2003

The sliding wear behavior of a Fe-base hardfacing alloy was investigated in the temperature range of $25∼250^{\circ}C$ under a contact stress of 15 ksi (103 MPa). The wear loss of this Alloy in pressurized water was less than that of NOREM 02. And galling did not occurred at this alloy in all temperature ranges. It was considered that the wear resistance of this Alloy was attributed to the strain-induced phase transformation from austenite to $\alpha$'martensite during sliding wear.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Bulletin of the Korean Chemical Society
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• v.21 no.12
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• pp.1193-1198
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• 2000

The preparation of nanocrystalline hematite, ${\alpha}-Fe_2O_3$, paricles and their surface coating with silica layers are described. The hematite particles with the size of 30~60 nm are firstly prepared by thermal decomposition of trinuclear acetate-hydroxo iron (III) nitrate complex, $[Fe_3$(OCOCH_3)_7$OH${\cdot}$2H_2O]NO_3$, at $400^{\circ}C$. Subsequently the hematite surfaces are coated with siliva layers by a controlled hydrolysis and condensation reaction of TEOS with varying the TEOS concentration and pH. Monodispersed and spherical $SiO_2-coatedFe_2O_3$ particles with the average particle diameter of ~90 nm and extremely narrow size distribution can be obtained at the pH of 11 and the TEOS concentration of 0.68M, which are found to be the optimum conditions in the present study in achieving the homogeneous deposition of silica layers on hematite surfaces. Diffuse reflectance UV-Vis spectra reveal that the characteristic optical reflectance of ${\alpha}-Fe_2O_3$ particles is preserved almost constant even after coating the surfaces, suggesting that the $SiO_2$ layers can be regarded as protecting layers without degrading the optical properties of hematite particles.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.57-62
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• 1989

Sputter-deposited Ti film on Si substrates which were implanted with various doses of As was annealed at the temperature of 600-900$^{circ}C$ for 20 sec in Ar atmosphere. The sheet resistance of Ti-silicides was measured by 4-point probe, the thickness by $alpha$-step, and observed the behavior of As dopant in Si substrates by ASR. With increasing As doses, the thickness of Ti-silicides decreased and the sheet resistance of Ti-silicides increased. And we discussed the relationships between the above results and the factors of Si diffusion.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.200-205
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• 2003

Thermoelectric p-type $Fe_{0.98}$ $Mn_{ 0.02}$$Si_2$ bulk specimens have been produced by mechanical alloying and consolidation by vacuum hot pressing. The subsequent isothermal annealing was not able to fully transform the mestastable as -milled powders into the $\beta$ $-FeSi_2$ phase, so that the obtained matrix consisted of not only thermoelectric semiconducting $\beta$-FeSi$_2$ but also some residual, untransformed metallic $\alpha$ $- Fe_2$$Si_{ 5}$ and $\varepsilon$-FeSi mixtures. Interestingly, $\beta$ - $FeSi_2$ was more easily obtained in the low density specimen when compared to the high density specimen. The oxidation at 700 and $800^{\circ}C$ in air led to the phase transformation of the above described iron - silicides and the formation of a thin silica surface layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.221-225
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• 2001

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering was investigated. The ${\beta}-SiC-TiB_2$ ceramic composites were hot-press sintered and pressureless-annealed by adding 16, 20, 24 wt% ${\beta}-SiC-TiB_2$(6:4 wt%) powder as a liquid forming additives at low temperature(1800 $^{\circ}C$) for 4 h. Phase analysis of composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$). The relative density was over 95-88 % of the theoretical density, and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest value of 5.88 MPa${\cdot}m^{1/2}$ for composites added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest value of $5.22{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm$ for composite added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature, and was all positive temperature coefficeint resistance(PTCR) against temperature up to 900 $^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.119-123
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• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.3
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• pp.160-166
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• 2001

The change of ribbon geometry, microstructure and shape recovery with Mn contents, wheel speed and various annealing temperature have been studied in Fe-X%Mn-5Cr-5Co-4Si (X%=15, 20, 24) shape memory alloy (SMA) ribbons rapidly solidfied by single roll chill-block melt-spinning process. The thickness and width of melt-spun ribbons are reduced, results in refining and uniformalizing grains with increasing wheel speed. In the ribbons melt-spun at a wheel speed of 15m/sec, both ${\varepsilon}$ and ${\alpha}^{\prime}$martensites are formed in ribbon 1 (15.5wt%Mn), while only ${\varepsilon}$ martensite is revealed in ribbon 2 (20.2wt%Mn) and ribbon 3 (23.5wt%Mn). The volume fraction of ${\varepsilon}$ martensite is decreased with increasing Mn contents, and those of ${\varepsilon}$ as well ${\alpha}^{\prime}$martensites are increased due to thermal stress relief and grain growth with increasing annealing temperature. Ms temperatures of the ribbons 1, 2 and 3 are fallen with increasing Mn contents. $M_s$ temperatures of the ribbons 1, 2 and 3 annealed at $300^{\circ}C$ for 3 min are risen abruptly, but are nearly constant even at higher annealing temperature, i.e., 400, 500 and $600^{\circ}C$ for 3 min. Shape recovery of the ribbons 1, 2 and 3 increased 30%, 52% and 69% with Mn contents, respectively. Shape recovery of ribbon 1 (15.5wt%Mn) formed ${\varepsilon}$ and ${\alpha}^{\prime}$martensites decreased because of the presence of ${\alpha}^{\prime}$martensite but those of ribbon 2 (20.2wt%Mn) and ribbon 3 (23.5wt%Mn) formed ${\varepsilon}$ martensite increased with increasing annealing temperature.