• Electrical & Electronic Materials
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• v.6 no.5
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• pp.470-475
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• 1993

1150, 1450, 1600.deg.C에서 MgO-SiO$_{2}$-Al$_{2}$O$_{3}$계를 유리성분으로 하는 mullite-glass질 회로기판재료의 소결거동에 미치는 MgO첨가량과 소성시간에 따른 영향을 조사하였으며 주로 소성시간이 밀도, 기공분포, 미세구조 및 생성상에 미치는 영향을 조사하였다. 1150.deg.C에서는 MgO의 첨가량에 관계없이 소결이 진행되지 않았으며 1450.deg.C에서는 MgO첨가량에 따라 소결속도가 증가하였다. 1600.deg.C에서는 각조성의 시료 모두가 빨리 과소성단계에 도달하였다. 1450.deg.C에서는 MgO 0.85% 첨가했을때 소성시간에 따라 기공량은 감소하는 반면 기공경은 일정하게 증가하였다. 먼저 .alpha.-SiO$_{2}$가 cristobalite로 전이한 후에 MgO와 반응하여 유리상으로 된다.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1162-1168
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• 1995

Systematic studies of the effects of additives and processing variables on the sintered density and the effect of crystalline forms of starting powders on the microstructure of pressureless sintered silicon carbide are described. Oxide additives were effective for the densification of SiC up to 96% of theoretical density at temperature as low as 185$0^{\circ}C$. Use of embedding powder increased the sintered density, up to 98% of theoretical density, by decreasing the weight loss during sintering. Composite type duplex microstructure has been developed due to the $\beta$longrightarrow$\alpha$ phase transformation of SiC by sintering at 185$0^{\circ}C$ and heat treatment at 195$0^{\circ}C$ for 1h.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.329-332
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• 2004

Cast-forging process has a lot of advantages in terms of saving materials along with enhancement of mechanical properties. Therefore, this process has been taken as one of candidate process to manufacturing automotive suspension parts. Since most of cast-forging parts are made with using Al-Si alloys of high castability, the mechanical properties largely depends on the primary ${\alpha}$ and eutectic Si particles. During hot forging step these microstructural features evolve with strain increment. In the present study, the mechanical property evolution was investigated in terms of microstructual evolution with strain. Specially, fracture behavior of A356 alloy was studied to find out how to improve the mechanical properties.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.319-323
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• 1988

For finding the effects of As on $TiSi_2$ formation, sputter deposited Ti film on Si substrates implanted with various doses of As have been rapid thermal annealed in Ar atmosphere at temperatures of 600-900$^{\circ}C$ for 20 sec. The sheet resistance of Ti-Silicides was examined with 4-point probe, the thickness with ${\alpha}$-step, and the As dopant behavior in Si substrates with ASR. The thickness of Ti-Silicides decreased with increasing As doping, but Ti-Silicides sheet resistance increased with increasing it. However, the critical concentration effect reported by Park et al. was not observed. We observed that the thickness of native oxide increase with increasing As doping. Thus, we concluded that native oxide act as a "barrier" for the Si diffusion.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4161-4164
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• 2012

Density functional MO calculations for the methylsilole anion of $[C_4H_4SiMe]^-$ and methylgermole anion of $[C_4H_4SiMe]^-$ at the B3LYP (full)/6-311+$G^*$ level (GAUSSIAN 94) were carried out and characterized by frequency analysis. The ground state structure for the methylsilole anion and methylgermole anion is that the methyl group is pyramidalized with highly localized structure. The difference between the calculated $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are 9.4 and 11.5 pm, respectively. The E-Me vector forms an angle of $67.9^{\circ}$ and $78.2^{\circ}$ with the $C_4E$ plane, respectively. The optimized structures of the saddle point state for the methylsilole anion and methylgermole anion have been also found as a planar with highly delocalized structure. The optimized $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are nearly equal for both cases. The methyl group is located in the plane of $C_4E$ ring and the angle between the E-Me vector and the $C_4E$ plane for the methylsilole anion and methylgermole anion is $2.0^{\circ}$ and $2.3^{\circ}$, respectively. The energy difference between the ground state structure and the transition state structure is only 5.1 kcal $mol^{-1}$ for the methylsilole anion. However, the energy difference of the methylgermole anion is 14.9 kcal $mol^{-1}$, which is much higher than that for the corresponding methylsilole monoanion by 9.8 kcal $mol^{-1}$. Based on MO calculations, we suggest that the head-to-tail dimer compound, 4, result from [2+2] cycloaddition of silicon-carbon double bond character in the highly delocalized transition state of 1. However, the inversion barrier for the methylgermole anion is too high to dimerize.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.405-411
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• 2001

Compacts of a mixture of fine $\alpha$-Si$_3$N$_4$powders, 6% $Y_2$O$_3$and 1% $Al_2$O$_3$were attrition milled time on phase and microstructural development in silicon nitride ceramics. The sintered surface and the interior showed different behaviors in phase and microstructral developments. Increased oxygen content with increased milling time of powder mixture leads to the formation of Si$_2$$N_2$O phase at temperatures as low as 155$0^{\circ}C$. Si$_2$$N_2$O is stable in the interior of the samples but unstable in the surface region of the specimen sintered at higher temperature. This results in a duplex structure where the interior consists of Si$_2$$N_2$O grains dispersed in $\beta$-Si$_3$N$_4$matrix and a surface which contains only $\beta$-Si$_3$N$_4$. The alpha to beta phase transformation and the microstructural development are shown to be influenced by the formation and decomposition of the Si$_2$$N_2$O.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.357-366
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• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.451-458
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• 1992

Dense glass-ceramics for low firing temperature substrate were prepared by addition of CeO2 flux to the glass of MgO-Al2O3-SiO2 system. Glass powders were fabricated by melting at 150$0^{\circ}C$ and ball milling. Glass powder compacts were sintered at 800~100$0^{\circ}C$ for 3h. The crystallization and the shrinkage behaviors of glass powder compacts were analyzed by XRD, DTA and TMA. The shrinkage of glass powder compact increased with increasing the amount of CeO2. Because the softening temperature decreased and the crystallization temperature increased with increasing the amount of CeO2. Apparently, addition of CeO2 prevented formation of $\mu$-cordierite phase from the glass-ceramics and improved formation of $\alpha$-cordierite phase. Therefore crystallization properties were enhanced.