• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.335-341
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• 2003

The composites were fabricated respectively 61vo1.% $\beta$ -SiC and 39vo1.% Ti $B_2$ spray-dried powders with the liquid forming additives of l2wt% $Al_2$ $O_3$＋ $Y_2$ $O_3$ by pressureless annealing at 1$700^{\circ}C$, 175$0^{\circ}C$, 180$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$ -SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and 4.4Mpaㆍ $m^{\frac{1}{2}}$ for composites by pressureless annealing temperature 1$700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 8.09${\times}$10$^{-3}$ ㆍcm for composite by pressureless annealing temperature 1$700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Membrane Journal
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• v.17 no.3
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• pp.254-268
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• 2007

Sodium type faujasite(FAU) zeolite layers with diverse materials characteristics(Si/Al ratio, thickness, and structural discontinuity) were hydrothermally grown on a porous $\alpha-Al_2O_3$ tube, and then the $CO_2/N_2$ separation was evaluated at $30^{\circ}C$ for an equimolar mixture of $CO_2$ and $N_2$. Among hydrothermal conditions, $SiO_2$ content in hydrothermal solution seriously affected materials characteristics: with an increment in the $SiO_2$ content, Si/Al ratio, thickness, and structural discontinuity of grown FAU zeolite layer simultaneously increased. The present study reveals that structural discontinuity(intercrystalline voids due to an incomplete densification and cracks induced by GIS Na-P1 phase) is the most important variable affecting the $CO_2/N_2$ separation. Also, it was suggested that the $CO_2$ desorption in permeate side be the rate-determining(slowest) step in the overall $CO_2$ permeation.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.176-181
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• 2002

Fabrication of ${\beta}-FeSi_2$ was attempted by making use of the combined process of mechanical alloying (MA) and spark plasma sintering (SPS). MA was performed under the Ar gas atmosphere using mixed powders of pure iron and silicon having the mole fraction of 1:2. SPS process was performed at 800-85$0^{\circ}C$ with the applied pressure of 50MPa and the holding time was ranging from 0 to 30min. The mechanically alloyed powder by cyclic operation of rotor for 15hrs consisted of $\varepsilon$-FeSi and Si phases. When this mechanically alloyed powder was sintered by SPS process above 85$0^{\circ}C$, $\varepsilon$-FeSi and ${\alpha}-Fe_2Si_5$ phase were formed. Bulk product sintered at 82$0^{\circ}C$ for 30min consisted of ${beta}-FeSi_2$ phase with a small fraction of $\varepsilon$-FeSi and the density of sintered specimen was 75.3% theoretical density. It was considered that the MA/SPS combined process was effective for the preparation of ${\beta}-FeSi_2$ without heat treatment process after sintering.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1538-1540
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• 2003

The composites were fabricated respectively 61vol.% ${\beta}$-SiC and 39vol.% $TiB_2$ spray-dried powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1700^{\circ}C,\;1750^{\circ}C\;1800^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and $4.4Mpa{\cdot}m^{1/2}$ for composites by pressureless annealing temperature $1700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of $8.09{\times}10^{-3}{\Omega}{\cdot}cm$ for composite by pressureless annealing tempe rature $1700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-$TiB_2$ composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.303-310
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• 2008

We fabricated hydrogenated amorphous silicon(a-Si:H) 140 nm thick film on a $180\;nm-SiO_2/Si$ substrate with an inductively-coupled plasma chemical vapor deposition(ICP-CVD) equipment at $250^{\circ}C$. Moreover, 30 nm-Ni film was deposited with a thermal-evaporator sequently. Then the film stack was annealed to induce silicides by a rapid thermal annealer(RTA) at $200{\sim}500^{\circ}C$ in every $50^{\circ}C$ for 30 minuets. We employed a four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), and scanning probe microscope(SPM) in order to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure evolution, and surface roughness, respectively. We confirmed that nano-thick high resistive $Ni_3Si$, mid-resistive $Ni_2Si$, and low resistive NiSi phases were stable at the temperature of <300, $350{\sim}450^{\circ}C$, and >$450^{\circ}C$, respectively. Through SPM analysis, we confirmed the surface roughness of nickel silicide was below 12 nm, which implied that it was superior over employing the glass and polymer substrates.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.515-523
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• 2010

Porous SiC candle filter preforms were fabricated by extrusion and ramming process. To fabricate SiC candle filter preform, commercially available F180 mesh ($85\;{\mu}m$) $\alpha$-SiC powder and $44\;{\mu}m$ mullite, $CaCO_3$ powder were used as the starting materials. The candle type preforms were fabricated by vacuum extrusion and ramming process, and sintered at $1400^{\circ}C$ 2 h in air atmosphere. Corrosion test of the sintered candle filter specimens as forming method was performed at $600^{\circ}C$ for 2,400 h in simulated IGCC syngas atmosphere. The effect of forming method on mechanical properties, pore distribution, microstructure and crystalline phase was investigated.

• Journal of Powder Materials
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• v.8 no.2
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• pp.104-109
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• 2001

The semiconducting ${\beta}-FeSi_2$ compound has been recognized as a thermoelectric material with excel-lent oxidation resistance and stable characteristics at elevated temperature. In the present work, we applied mechanical alloying(MA) technique to produce ${\beta}-FeSi_2$ compound using a mixture of elemental iron and silicon powders. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-K $\alpha$ radiation, thermal analysis and scanning electron microscopy. The single ${\beta}-FeSi_2$ phase has been obtained by mechanical alloying of $Fe_{33}Si_{67}$ mixture powders for 120 hrs or for 70 hrs coupled with the subsequent heat treatment up to $700^{\circ}C$. The grain size of ${\beta}-FeSi_2$ powders analyzed by Hall plot method was 44nm.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.339-342
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• 2000

In the present study, we attempted to apply DV-X$\alpha$ method to expressing the reactivity of materials. The expression of reactivity was discussed by comparison between ${\gamma}$-C$_2$G having hydraulic activity and ${\gamma}$-C$_2$S not having hydraulic activity at normal conditions. It was found that the model cluster used for calculation can finely reproduce the bulk and surface states using with and without point charge, respectively. The hydration state was also represented by placing OH￣ on the surface of the cluster. It was calculated that the bond strength of the first layer (as surface) was bigger than that of inner layers (as bulk) for ${\gamma}$-C$_2$S while that of the first layer for ${\gamma}$-C$_2$G was smaller than that of inner layers. Subsequently a model in which OH￣ is coordinated on Ca at the surface was also calculated. The bond strength with OH￣ was stronger than that without OH￣, while for ${\gamma}$-C$_2$G the bond strength with OH￣ was weaker than that without OH￣. From these results, it is concluded that the hydraulic activity depends on whether the bond strength for hydrated state becomes weaker than that unhydrated state or not.