• Journal of the Korean Ceramic Society
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• v.21 no.1
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• pp.11-18
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• 1984

$eta$-Sialon synthesis was investigated via the simultaneous reduction and nitridation of Hadong Pink Kaolin using the graphite as a reducing agent at 135$0^{\circ}C$ under 80% $N_2-20%H_2$ atmosphere. When Hadong Pink Kaolin-graphite-silicon nitride seed(molar ratio ; $SiO_2:C:Si_3N_4$=1;3.5:0.05) mixture was heated at 135$0^{\circ}C$ for as long as 20h in 80%$N_2-20%H_2$ atmosphere a homogeneous $eta$-Sialon$(Si_{3.5}Al_{2.5}O_{2.5}N_{2.5})$ was mainly formed together with a small amount of $\alpha$-$Si_3N_4$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.215-217
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• 2007

반도체 집적화 기술의 발달로 반도체 공정에서 디바이스의 선폭은 줄어들고, 박막의 다층화가 필수적인 과정이 되었다. 이에 따라 반도체에서 Si 기판과 금속 배선과의 열적 안정성에 대한 신뢰성이 더욱 중요시 되어가고 있다. 이를 방지하기 위하여 우리는 3개의 화합물로 구성된 Tungsten-Carbon-Nitrogen (W-C-N) 확산방지막을 사용하였다. 실험은 Si 기판위에 W-C-N박막을 물리적 기상 증착법(PVD)으로 질소비율을 변화하며 확산방지막을 증착하여 Si 기판과 W-C-N확산방지막의 특성을 여러 온도 열처리 조건에서 확인하였다. 특성을 분석을 위하여 ${\alpha}-step$과 ${\beta}-ray$를 이용하여 증착률을 확인한 후 4-point probe를 이용하여 비저항을 측정하였고, X-ray Diffraction 분석을 통하여 결정 내부의 변화를 확인하였다. 이를 통하여 W-C-N 확산방지막의 열적인 안정성을 질소변화에 따라 조사하였다.

• Applied Microscopy
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• v.29 no.3
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• pp.281-289
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• 1999

The stirred and thixoformed $SiC_p/AZ91HP$ Mg composites are studied on the basis of microstructural analysis using transmission electron microscopy (TEM). The products of interfacial reaction are identified as $Mg_2Si$, MgO and $Mg_{17}Al_{12}$ phases and the crystallized phases are found to be orthorhmbic $Al_6Mn$ and decagonal T phases. It is shown that $Mg_2Si$ and $Mg_{17}Al_{12}$ phases are found at the surface of $SiC_p$ and $Al_6Mn$ is found near interface and crystallized on the matrix. Phase identification is carried out by crystallographic work based on primitive cell volume, zero order Laue zone (ZOLZ) patterns and single convergent beam electron diffraction (CBED) patterns containing higher order Laue zone ring from a nanosized region.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.75-77
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• 2001

The mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electro conductive ceramic composites were investigated as functions of the transition metal of $TiB_2$. The result of phase analysis for the SiC-$TiB_2$ composites by XRD revealed $\alpha$-SiC(6H). $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density showed the lowest 84.8% for the SiC-$TiB_2$ composites added with 39vol.%$TiB_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of $7.8\;MPa{\cdot}m^{1/2}$ for composites added with 39vol.%$TiB_2$ under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%$TiB_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%$TiB_2$ composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.370-376
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• 1998

The powder preparation of Zinc-Silicate phosphors compound was studied by hydrothermal reaction starting from the precursor which prepared by spray pyrolysis method. This process protect including of impuritied from crushing process and Mineralizing in hydrothermal reactions. Using spray pyrolysis precursor, ${\alpha}-Zn_2SiO_4$ powder was prepared by the hydrothermal reaction under $250^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.500-503
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC+39vol.%$TiB_2$electroconductive ceramic composites were investigated as a function of the liquid additives of $Al_2O_3+Y_2O_3$. The result of phase analysis for the SiC+39vol.%$TiB_2$composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and $YAG(Al_5Y_3O_{12})4 crystal phase. The relative density of SiC+39vol.%$TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$. contents. The fracture toughness showed the highest value of $7.8 MPa.m^{1/2}$ for composites added with 12 wt % $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $7.3\times10_{-4}\Omega.cm\; and\; 3.8\times10_{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity of the SiC+39vol.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C\; to\; 700^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.106-108
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• 2002

The composites were fabricated 61vol.% $\beta-SiC$ and 39vol.% $TiB_2$ powders with the liquid forming additives of l2wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1700^{\circ}C,\;1750^{\circ}C,\;1800^{\circ}C$ for 4 hours respectively. The result of Phase analysis of composites by XRD revealed $\alpha-SiC$(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the Young's modulus showed the highest value of 92.9701% and 92.884Gpa for composites by pressureless annealing temperature $1700^{\circ}C$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.214-217
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• 2004

숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.

• Applied Biological Chemistry
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• v.21 no.2
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• pp.103-108
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• 1978

Acid-stable ${\alpha}-amylase$ was partially purified from Paecilomyces subglobosum by Sephadex G-150 gel filtration. About 7.7-fold purification was obtained and the partially purified preparation has 5.0 U of ${\alpha}-amylase$ activity per mg of protein. Using this partially purified ${\alpha}-amylase$, general properties were studied and it showed the maximal activities at the conditions of pH 4.0 and $38^{\circ}C$. High stability of the acid-stable ${\alpha}-amylase$ in acidic condition was observed, whereas thermal stability was similar to the conventional ${\alpha}-amylase$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.80-84
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• 2003

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.