• 한국세라믹학회지
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• 제33권9호
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.140-143
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• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.711-715
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• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국재료학회지
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• 제1권2호
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• pp.99-104
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• 1991

Ta-silicide의 게이트 전극 및 비트라인(bit line)으로의 사용가능성을 알아보기 위하여 As, P, $BF_2$가 $5{\times}10^15cm^-2$의 농도로 이온주입된 다결정 실리콘에 탄탈륨을 스퍼터링으로 증착한 후 급속 열처리로 Ta-silicide를 형성하였다. 형성된 Ta-silicide의 특성은 4-탐침법, X-rayghlwjf, SEM 단면사진과 ${\alpha}$-step으로 조사하였으며, 불순물들의 거동은 Secondary Ion Mass Spectroscopy(SIMS)로 알아보았다. $TaSi_2$의 형성은 $800^{\circ}C$에서 시작하며 $1000^{\circ}C$ 이상에서 완료됨을 알았다. 형성된 $TaSi_2$층으로 out-diffusion 하였다.

• 한국재료학회지
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• 제9권11호
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• pp.1117-1122
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• 1999

5~10nm 두께의 얇은 산화막 위에 $\alpha$-실리콘과 Co/Ti 이중막을 순차적으로 증착하고 급속열처리하여 코발트 폴리사이드 전극을 만든 후, SADS법으로 다결정 Si을 도핑하여 MOS 커패시터를 제작하였다. 이때 drive-in 열처리조건에 따른 커패시터의 C-V 특성과 누설전류를 측정하여, $\textrm{CoSi}_{2}$의 열적안정성과 도판트 (B 및 As)의 재분포가 Co-폴리사이드 게이트의 전기적 특성에 미치는 영향을 연구하였다.$ 700^{\circ}C$에서 60~80초간 열처리시, 다결정 Si층의 도핑으로 우수한 C-V 특성과 낮은 누설전류를 나타냈으나, 그 이상 장시간 또는 $900^{\circ}C$의 고온에서는 $\textrm{CoSi}_{2}$의 분해에 따른 Co의 확산으로 전기적 특성이 저하되었다. SADS법으로 Co-폴리사이드 게이트 전극을 형성할 때, 도판트가 다결정 Si층으로 충분히 확산되는 것뿐만 아니라, $\textrm{CoSi}_{2}$의 분해를 억제하는 것이 매우 중요하다.

• 한국주조공학회지
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• 제15권5호
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• pp.483-493
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• 1995

The microstructural changes during semi-solid state processing of hypereutectic Al-Si alloy has been investigated in the present study. Stirring of semi-solid slurry results in the morphological changes of the primary Si particles, i.e. from angular rod shape to near-spherical shape. Besides the spherodization of primary Si particles, the average particle size increases, especially, at much higher rate in the final stage than that in the early stage of stirring. Various microstructure characterization techniques, such as anisotropic etching, SEM imaging and ECP analysis, reveal that the spherodization of primary Si particles occurs by the combinations of the mechanisms of coalescence, fracture, and wear of the individual particles. Isothermal shearing of hypereutectic Al-Si at $580^{\circ}C$ shows that spherical ${\alpha}-Al$ particles are formed by the dissociation of Al-Si eutectic structure at the early stage of isothermal shearing. The spherical ${\alpha}-Al$ particles gradually grow by the mechanisms of Ostwald ripening and coalescence of the particles.

• 대한금속재료학회지
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• 제48권7호
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• 한국세라믹학회지
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• 제21권1호
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• pp.5-10
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• 1984

$eta$-Sialon synthesis was investigated via the simulataneous reduction and nitriding of Wando pyrophyllite. When Wando pyrophyllite-graphite-$Si_3N_4$ seed mixture was heated at 135$0^{\circ}C$ for as long as 10 hours in 80% $N_2$-20%$H_2$ atomsphere $eta$-$Si_3N_4$ solid solution was mainly formed together with a small amount of $\alpha$-$Si_3N_4$ The value z of the forming $Si_{6-x}Al_2O_2N{8-z}$ was decreased with heating time.

• Molecules and Cells
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• 제27권4호
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• pp.493-496
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• 2009

Hypoxia-inducible factor $1{\alpha}$ ($HIF1{\alpha}$) is a transcription factor that plays a key role in the adaptation of cells to low oxygen stress and oxygen homeostasis. The oxygen-dependent degradation (ODD) domain of $HIF1{\alpha}$ responsible for the negative regulation of $HIF1{\alpha}$ in normoxia is intrinsically unfolded. Here, we carried out the backbone $^1H$, $^{15}N$, and $^{13}C$ resonance assignment of a proteolysis-resistant fragment (residues 404-477) in the $HIF1{\alpha}$ ODD domain using NMR spectroscopy. About 98% (344/352) of all the $^1HN$, $^{15}N$, $^{13}C{\alpha}$, $^{13}C{\beta}$, and $^{13}CO$ resonances were unambiguously assigned. The results will be useful for further investigation of the structural and dynamic states of the $HIF1{\alpha}$ ODD domain and its interaction with binding partners.

• 한국생활과학회지
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• 제23권1호
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• pp.137-148
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• 2014

고지방식이에 의해 경중 정도의 비만과 당뇨가 유발되는 제2형 당뇨동물 모델인 C57BL/6J-ob/ob 마우스에서 콩 이소플라본 단독 또는 콩 이소플라본과 올리고당을 첨가한 우유 아이스크림이 당뇨지표에 미치는 영향을 조사함으로써 콩 이소플라본 첨가 아이스크림의 항당뇨 효능을 조사하였다. 5주령 된 C57BL/6J-ob/ob 수컷 마우스를 1주일간 적응시킨 후 대조군과 설탕 첨가 아이스크림(MS), 콩 이소플라본 첨가 아이스크림(MS-SI), 콩 이소플라본/프럭토올리고당 첨가 아이스크림(MF-SI)을 대조식이에 30% 첨가하여 12주 동안 자유롭게 섭취시켰다. 희생 후 당뇨 지표에 해당하는 경구 당부하 혈당 반응, 공복혈당, 인슐린, C-peptide, $HbA_{1c}$ 및 렙틴 농도와 중성지방, 그리고 비장세포 증식능과 비장세포에서 분비되는 사이토카인인 IL-6과 TNF-${\alpha}$에 미치는 효과를 측정한 결과 군간 유의한 차이를 보이지 않았다. 결론적으로 제2형 당뇨모델 마우스에서 우유 아이스크림에 첨가된 콩 이소플라본이 당뇨 지표에 긍정적인 효과를 나타내지 않았다.