• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.825-831
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• 1995

Reaction-bonded SiC-Si material was fabricated by infiltration of Si melt into a mixture of $\alpha$-SiC and carbon at 175$0^{\circ}C$ under the vacuum atmosphere. Wear properties were analyzed by ball-on-plate wear tester, changing loading weight, sliding speed, sliding time and atmosphere, Results showed that the friction coefficient was decreased with increasing load and sliding velocity. The lowest friction coefficient of 0.05 was obtained under an oil atmosphere. The analysis of the wear surface indicated that the areas wehre particles were pulled out and where free silicon particles worn out preferentially serve as liquid reservoirs to decrease the wear resistance.

• Transactions of Materials Processing
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• v.7 no.2
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• pp.158-167
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• 1998

Hot restoration mechanism flow stress and stain of the Al2024 composites reinforced with 1,8,15,36, and $44{\mu}m\;SiC_p$(10 vol. %) were studied by hot torsion tests. The hot restoration mechanism of all the composites was found to be dynamic recrystallization(DRX) at $320^{\circ}C$ while that of the composites reinforced with 1 and $8{\mu}m\;SiC_p$ was found to be dynamic recovery(DRX) at $480^{\circ}C$. It was found that the Al2024 composite with $15{\mu}m\;SiC_p$ showed the highest flow stress(${\sim}$223 MPa) at $320^{\circ}C$ under a strain rate of 1.0/sec. Also the highest flow strain of the composites was obtained at $430^{\circ}C$. The com-posites reinforced with 1 and $8{\mu}m\;SiC_p$ showed lower flow stress and higher flow strain at $480^{\circ}C$ than those of the composites reinforced with 15, 36, and $44\;{\mu}m\;SiC_p$ These result were discussed in relation to the transition of the hot restoration mechanism. $DRX{\leftrightarrow}DRV$. The dependence of flow stress on strain rate and temperature was attempted to fit with the hyperbolic sine equation ($\dot{\varepsilon}=A[sinh({\alpha}{\cdot}{\sigma}_p]^n$ exp(-Q/RT)and Zener-Hollomon parameter($Z=\;\dot{\varepsilon}\;exp(Q/RT))$.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• Elastomers and Composites
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• v.31 no.5
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• pp.335-340
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• 1996

In order to look into the internal structure and the properties in the silicone rubbers added reinforcing fillers; silica $additives(O{\sim}140phr)$, and to examine the behavior of charged particles, the properties of thermally stimulated current(TSC) and X-Ray diffraction are investigated, respectively. And then, from the TSC which are formed by applying the electric field of $2{\sim}5kV/mm$ to specimen at the temperature range from -150 to $260^{\circ}C$, the results are as follwing: In the case of non-filled specimen, four peaks of ${\delta},\;{\gamma},\;{\beta}\;and\;{\alpha}$ are obtained at the temperature of $-120^{\circ}C,\;-60^{\circ}C,\;20^{\circ}C\;and\;130^{\circ}C$, respectively and the case of filled specimen, three peaks of ${\delta},\;{\alpha}_2\;and\;{\alpha}_1$ are observed at the temperature of $-120^{\circ}C,\;80^{\circ}C\;and\;130^{\circ}C$, respectively. The origins of these peaks are that, the ${\delta}$ peak seems to the result from the contribution of side chain methyl radical, and the ${\gamma}$ peak from the depolarization of space charge polarization owing to be added impurity during manufacturing specimens, and the ${\beta}$ peak from the orientation of $Si-CH_3$ dipole, and the ${\alpha}_2$ near the temperature of $80^{\circ}C$ from hydroxyl in carboxylic radical, and finally, the ${\alpha}_1$ peak near the temperature of $130^{\circ}C$ from carboxyl acid that is formed by the thermal oxidation of high temperature.

• Corrosion Science and Technology
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• v.12 no.3
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.132-136
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• 2001

Iron- silicide has been produced by mechanical alloying process and consolidated by hot pressing. As-consolidated iron silicides were consisted of $\beta$-FeSi$_2$ phase, and untransformed mixture of $\alpha$-$Fe_2Si_5$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting $\beta$-$FeSi_2$ phase. The condition for $\beta$-FeSi$_2$ transformation was investigated by utilizing DTA, SEM, TEM and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at $830^{\circ}C$ for 24 hours. The mechanical and thermoelectric properties of $\beta$-FeSi$_2$ materials before and after isothermal annealing were characterized in this study.

• Journal of the Korean institute of surface engineering
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• v.52 no.5
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• pp.246-250
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• 2019

Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

• Journal of Korea Foundry Society
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• v.15 no.6
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• pp.566-573
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• 1995

In this study, the microstructural characteristics such as primary silicon, eutectic silicon, $SiC_p$ dispersion behavior, compound amount and Si solubility in $Al/SiC_p$ composite fabricated by the squeeze casting under various conditions were investigated systematically. As applied pressure(MPa) increases, cooling rate and compound amount are increased. In gravity casting, the cooling rate of hypereutectic composite is slower than of hypoeutectic composite by exothermic reaction of primary Si crystallization. But the cooling rate of hypereutectic composite is faster than that of hypoeutectic composite fabricated by same applied pressure, because amount of primary Si crystallization in hypereutectic composite was decreased, on the contrary, primary ${\alpha}-Al$ in hypoeutetic composite was increased due to increase of Si solubility in matrix by applied pressure. The crystalized primary silicon in hypereutectic composite fabricated by squeeze casting become more fine than that in non-pressure casting This is because mush zone became narrow due to increase of Si content of eutectic composition by pressure and time for growth of primary silicon got shorter according to applied pressure. It is turned out that eutectic temperature and liquidus are decreased by the increasing of squeeze pressure in all the composite due to thermal unstability of matrix owing to increasing of Si solubility in matrix by the increasing of applied pressure, as indicated in thermal anaiysis(DSC) results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.381-384
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• 2001

The $\beta$-SiC+ZrB$_2$ and $\beta$-SiC+TiB$_2$ceramic electroconductive composites were pressureless-sintered and annealed by adding l2wt% A1$_2$ $O_3$+Y$_2$ $O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density showed highest value of 84.92% of the theoretical density for SiC-TiB$_2$ at 190$0^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), TiB$_2$, $Al_{5}$Y$_2$ $O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 230 MPa for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 6.50 MPa . m$^{1}$2/ for SiC-ZrB$_2$ composites at 190$0^{\circ}C$. The electrical resistivity was measured by the Rauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.242-242
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• 2004

The composites were fabricated 61 vol.%α-α-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% Al₂O₃＋Y₂O₃ by pressureless annealing at 1700, 1800, 1900℃ for 4 hours. The result of phase analysis of composites by XRD revealed α-SiC(2H), WC, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the flexural strength, fracture toughness and Young′s modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍ$m^{\frac{1}{2}}$, and 106.43㎬ for composite by pressureless annealing temperature 1900℃ at room temperature. The electrical resistivity showed the lowest value of 1.47×$10^{-3}$/Ω·㎝ for composite by pressureless annealing temperature 1900℃ at 25℃. The electrical resistivity of the α-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from 25℃ to 500℃.