• 한국세라믹학회지
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• 제25권5호
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• pp.431-436
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• 1988

The properties of scid-resistance to boiling HCl, thermal expansion coefficient and softening temperature of mother glass and glass-ceramic of LAS systems were investigated at the contents of SiO2 varing from 57 to 67wt%. The nucleation and growth of crystalline phase of LAS compositions were carried out at 50$0^{\circ}C$ and $700^{\circ}C$. The crystalline phase jconsists of lithium alumino silicate, lithum meta silicate, lithium disilicate, $\alpha$-crystobalite and $\alpha$-quartz. Lithium alumino silicate(virgilite) is the major crystalline phase in the glass ceramics. The degree of acid resistant property was increased in proportion with the silica content for both glass and ceramics. Glass-ceramic gives lower acid-resistance and thermal expansion coefficient while softening temperature shows higher for glass-ceramic than for mother glass.

• 한국세라믹학회지
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• 제24권5호
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• pp.491-499
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• 1987

Silicon nitride powder synthesized from Kimcheon quartzite and commercial reagents, AlN and Y2O3 powders were used to prepare the partially and fully stabilized Y-${\alpha}$-Sialon ceramics by the pressureless sintering at 1800$^{\circ}C$ for 2 hours in N2 atmosphere. Good mechanical properties of the prepared Y-${\alpha}$-Sialon ceramics were found over 0.4∼0.6 of the Yttrium solubility range, X, in the equation Yx(Si12-4.5x, Al4.5x)(O1.5x, N16-1.5x). The properties of these prepared Y-${\alpha}$-Sialon ceramics were compared with those prepared in the same way from a commercial Toshiba Si3N4 powder.

• Nuclear Engineering and Technology
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• 제45권6호
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• pp.811-820
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• 2013

SiC has been under investigation as a potential cladding for LWR fuel, due to its high melting point and drastically reduced chemical reactivity with liquid water, and steam at high temperatures. As SiC is a brittle material its behavior during the reflood phase of a Loss of Coolant Accident (LOCA) is another important aspect of SiC that must be examined as part of the feasibility assessment for its application to LWR fuel rods. In this study, an experimental assessment of thermal shock performance of a monolithic alpha phase SiC tube was conducted by quenching the material from high temperature (up to $1200^{\circ}C$) into room temperature water. Post-quenching assessment was carried out by a Scanning Electron Microscopy (SEM) image analysis to characterize fractures in the material. This paper assesses the effects of pre-existing pores on SiC cladding brittle fracture and crack development/propagation during the reflood phase. Proper extension of these guidelines to an SiC/SiC ceramic matrix composite (CMC) cladding design is discussed.

• 센서학회지
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• 제13권4호
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• pp.282-286
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• 2004

${\alpha}-Fe_{2}O_{3}$ films were prepared by ultrasonic spray pyrolysis (USP) on $SiO_{2}$ coated Si wafers using iron acetylacetonate as an iron precursor. The crystallographic properties and surface morphologies of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. X-ray photoelectron spectroscopy (XPS) was carried out to determine the Fe oxidation states. In order to observe stability of the films to temperature, the resistance variation of the films with an ambient temperature was measured. The effects of substrate temperature on the structural and electrical properties of the ${\alpha}-Fe_{2}O_{3}$ films were studied. The films were densified from the substrate temperature of $350^{\circ}C$. The grain size of the films grown at $400^{\circ}C$ was shown to be increased abruptly comparing with that of $350^{\circ}C$. The films showed a low resistance variation between the ambient temperature of $300^{\circ}C$ and $350^{\circ}C$.

• 한국세라믹학회지
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• 제27권5호
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• pp.625-630
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• 1990

Cordierite powders were prepared from Si(OC2H5)4, Al(OC3H7i)3 and Mg(OC2H5)2 by the sol-gel method. Two different methods were applied for producing fine and homogeneous powders. One is that Si(OC2H5)4 with a lowr rate of hydrolysis was partially hydrolyzed and then Al(OC3H7i)3 and Mg(OC2H5)2 were mixed and reacted. The other is based on the simultaneous hydrolysis of these metal alkoxides using i-C4H9OH which retards the rate of hydrolysis of Al(OC3H7i)3 and Mg(OC2H5)2. It was confirmed that ifne and homogeneous powders were obtained from both methods. Also these powders were calcined at four different temperatures during two hours. X-ray diffraction patterns show only ${\mu}$-cordierite phase at 1000$^{\circ}C$, ${\mu}$-cordierite and ${\alpha}$-cordierite phases at 1100-1200$^{\circ}C$ and ${\alpha}$-cordierite phase at 1300$^{\circ}C$ respectively.

• 한국재료학회지
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• 제4권1호
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• pp.9-23
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• 1994

Multitarget bias cosputter deposition(MBCD)에 의해 저온($200^{\circ}C$)에서 NaCI(100)상에 정합$CoSi_2$를 성장시켰다. X-선회절과 투과전자현미경에 의해 증착온도와 기판 bias전압에 따른 각각 silicide의 상전이와 결정성을 관찰하였다. Metal induced crystallization(MIC) 과 self bias 효과에 의해 $200^{\circ}C$에서 기판전압을 인가하지 않은 경우에도 결정질 Si이 성장하였다. MIC현상을 이론 및 실험적으로 고찰하였다. 관찰된 상전이는 $Co_2Si \to CoSi \to Cosi_2$로서 유효생성열법칙에 의해 예측된 상전이와 일치하였다. 기판 bias전압 인가시 발생한 이온충돌에 의한 충돌연쇄혼합(collisional cascade mixing), 성장박막 표면의 in situ cleaning, 핵생성처(nucleation site)이 증가로 인하여 상전이, CoSi(111)우선방위, 결정성은 증착온도에 비해 기판bias전압에 더 큰 영향을 받았다. $200^{\circ}C$에서 기판 bias전압을 증가시킴에 따라 이온충돌에 의한 결정입성장이 관찰되었으며, 이를 이온충독파괴(ion bombardment dissociation)모델에 의해 해석하였다. $200^{\circ}C$에서의 기판 bias전압증가에 따른 결정성변화를 정량적으로 고찰하기 위해 Langmuir탐침을 이용하여 $E_{Ar},\; \alpha(V_s)$를 계산하였다.

• 한국세라믹학회지
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• 제29권2호
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• pp.143-151
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• 1992

Partially stabilized alpha-sialon composition (X=0.1) powder was hot-pressed at 1800~200$0^{\circ}C$ for 0~90 min with 30 MPa. Sintering behavior, phase changes and mechanical properties for the specimens were studied. As sintering temperature was raised from 1800 to 190$0^{\circ}C$, the relative density tended to increase and reached 99% of theoretical at 190$0^{\circ}C$. However the amount of alpha-sialon decreased because alpha-sialon transformed to beta-Si3N4 and yttrium rich silicate glass. In the case of hot-pressing at 190$0^{\circ}C$ for various times, densification increased with sintering time and full densification above 99% of theoretical was attained by 30 min. The amount of alpha-sialon decreased with sintering time. The maximum strength of 825 MPa was obtained by hot-pressing at 190$0^{\circ}C$ for 60 min.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• 한국세라믹학회지
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• 제37권3호
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• pp.247-255
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• 2000

Silicon carbide with sialon was prepared by hot pressing and transient liquid-phase sintering, and the effects of sintering atmosphere and starting phases on their microstructural characteristics were investigated. The sintered SiC with Sialon composition(Y2O3, AlN, Si3N4) in argon atmosphere had high sintered density and large aspect ratio. But sintered specimens in nitrogen atmosphere showed low aspect ratio and small grian size, becuase of the retardation of phase transformation and grain growth. Addition of Y-Sialon powder to SiC also retarded the phase transformation to ${\alpha}$-SiC from ${\beta}$-SiC and densification. The SiC specimen prepared from the starting ${\beta}$-SiC powder with Sialon composition(Y2O3, AlN, Si3N4) showed the highest fracture toughness about 6.0 MPa$.$m1/2.

• 한국자기학회지
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• 제5권4호
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• pp.281-286
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• 1995

Hexaferrite $Ba_{0.25}Sr_{0.75}Fe_{12}O_{19}$에 $SiO_{2}$를 첨가한 쉬트자석의 자기적 성질의 변화를 연구하기 위해 X-선 회절 실험, 뫼스바우어 분광실험, 자기모멘트 측정실험 등을 하였다. 쉬트자석은 Dr. Blade 방법에 의해 제조되었고, 결정구조는 마그네토플럼바이트 M-type 육방결정구조이다. 첨가제 농도에 따른 격자상수의 변화는 거의 없으나, $SiO_{2}$가 2.0 wt.% 이상부터 ${\alpha}-Fe_{2}O_{3}$ 의 상이 나타나기 시작했다. 이성질체 이동값은 Fe이온들이 3가 임을 나타낸다. $SiO_{2}$의 증가에 따라 Curie 온도는 감소함을 보였다. 이것은 $Si^{4+}$가 12k-site $Fe^{3+}$의 자리를 차지함으로써 Fe-O-Fe의 초교환상호작용에 의한 원자간 거리와 양이온 사이의 각이 변함에 따른 것이다. ${\alpha}-Fe_{2}O_{3}$의 상은 $Si^{4+}$가 12k-site $Fe^{3+}$의 자리를 차지함으로 치환된 $Fe^{3+}$에 의해 나타난 것이다. 자기모멘트측정으로 부터 $SiO_{2}$를 첨가한 $Ba_{0.25}Sr_{0.75}Fe_{12}O_{19}$ 쉬트자석은 보자력 $H_{c}$, 포화자화 $M_{s}$, 잔류자화 $M_{r}$이 양이온 치환보다는 미세구조변화에 더 의존함을 알았다.