• Asian Pacific Journal of Cancer Prevention
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• v.13 no.8
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• pp.3631-3636
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• 2012

Objective: To determine whether silence of $PKC-{\alpha}$ expression by small interference RNA (siRNA) might regulate MDR1 expression and reverse chemoresistance of ovarian cancer. Methods: We measured gene and protein expression of MDR1 and $PKC-{\alpha}$ in ovarian cancer cells and assessed their correlation with cell drug resistance. We also examined whether blocking $PKC-{\alpha}$ by RNA interference (RNAi) affected MDR1 expression and reversed drug resistance in drug sensitivity tests. Results: The drug resistance cell lines, OV1228/DDP and OV1228/Taxol, had higher gene and protein expression of MDR1 and $PKC-{\alpha}$ than their counterpart sensitive cell line, OV1228. SiRNA depressed $PKC-{\alpha}$ gene protein expression, as well as MDR1 and protein expression and improved the drug sensitivity in OV1228/DDP and OV1228/Taxol cells. Conclusion: These results indicated that decreasing $PKC-{\alpha}$ expression with siRNA might be an effective method to improve drug sensitivity in drug resistant cells with elevated levels of $PKC-{\alpha}$ and MDR1. A new siRNA-based therapeutic strategy targeting $PKC-{\alpha}$ gene could be designed to overcome the chemoresistance of ovarian cancer.

• Journal of the Korean Ceramic Society
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• v.17 no.3
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• pp.141-144
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• 1980

Thermal expansion property of $SiO_2-Al_2O_3$ system consisted of Muan clay, Hadong Pink Kaolin and Dangjin Silica was studied. Specimens were heated at the constant rate of 18$0^{\circ}C$/hr to the max. temperatures of 115$0^{\circ}C$ to 130$0^{\circ}C$ with an interval of $25^{\circ}C$, and matured for 3hrs. The result of X-Ray diffraction analysis showed that main crystals formed were $\alpha$-quartz, $\alpha$-cristobalite and mullite. Linear thermal expansion was measured at 90$0^{\circ}C$. The results of the linear thermal expansion were decreased regularly with the increase of the sintering temperature in accordance with the following equation. $y=5$\chi$\perp1100^{\circ}$. Where $\chi$ is amounts of kaolin (wt%), and y is temperature of the changing point of linear thermal expansion.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.235-242
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• 2004

Si, NH$_4$Cl, NaN$_3$, NaCl, $N_2$ were used as raw materials for preparation of $\alpha$-Si$_3$N$_4$ powder. NH$_4$Cl and NaN$_3$ were used as additives, and NaCl was used as a diluent. Initial $N_2$ gas pressure in the SHS reactor was 60 atm. In preparation of $\alpha$-Si$_3$N$_4$, the reactivity and the properties of the products were examined with the various kinds of additives and the content of diluent. At first, the optimum reaction system for the preparation of $\alpha$-Si$_3$N$_4$ is examined and then the optimum composition was examined in the optimum reaction system. The optimum reaction system was Si-$N_2$-additive(NH$_4$Cl+NaN$_3$)-diluent(NaCl) and the optimum composition was 38 wt%Si+50 wt%(NH$_4$Cl+NaN$_3$)+12 wt%NaCl. The maximum fraction of $\alpha$-phase of Si$_3$N$_4$ produced in this condition was 96.5 wt% and the shape of the $\alpha$-Si$_3$N$_4$ produced in this condition was an irregular fiber with a length of 10 ${\mu}{\textrm}{m}$ and a diameter of 1 ${\mu}{\textrm}{m}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1649-1652
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

• Transactions of Materials Processing
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• v.3 no.4
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• pp.427-439
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• 1994

The high temperature deformation behavior of $SiC_p/Al-Si$ composites and Al-Si matrix was studied by hot torsion test in a range of temperature from $270^{\circ}C$ to $520^{\circ}C$ and at strain rate range of $1.2{\times}10_{-3}~2.16{\times}10_{-1}/sec$. The hot restoration mechanisms for both matrix and composites were found to be dynamic recrystallization(DRX) from the investigation of flow curves and microstructural evolutions. The Si precipitates and SiC particles promoted DRX, and the peak strain$({\varepsilon}_p)$ of the composites was smaller than that of the matrix. Flow stresses of $SiC_p/Al-Si$ composites were found to be generally higher than the matrix, but the difference was quite small at higher temperature due to the decrease of capability of load transfer by SiC particles. With increasing temperature, failure strain of matrix and composites are inclined to increase, the increasing value of failure strain for the $SiC_p/Al-Si$ composites was small compared to that of matrix. The stress dependence of both materials on strain rate() and temperature(T) was examined by hyperbolic sine law, $\.{\varepsilon}=A_1[sinh({\alpha}{\cdot}{\sigma})]_n$exp(-Q/RT)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.331-332
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• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.559-569
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• 2010

The liquid-phase sintering method was used to prepare a glass lens forming core composed of SiC-$Al_2O_3-Y_2O_3$. Spark plasma sintering was used to obtain dense sintered bodies. The sintering characteristics of different SiC sources and compositions of additives were studied. Results revealed that, owing to its initial larger surface area, $\alpha$-SiC offers sinterability that is superior to that of $\beta$-SiC. A maximum density of $3.32\;g/cm^3$ (theoretical density [TD] of 99.7%) was obtained in $\alpha$-SiC-10 wt% ($6Al_2O_3-4Y_2O_3$) sintered at $1850^{\circ}C$ without high-energy ball milling. The maximum hardness and compression stress of the sintered body reached 2870 Hv and 1110 MPa, respectively. The optimum ultra-precision machining parameters were a grinding speed of 1243 m/min, work spindle rotation rate of 100 rpm, feed rate of 0.5 mm/min, and depth of cut of $0.2\;{\mu}m$. The surface roughnesses of the thus prepared final products were Ra = 4.3 nm and Rt = 55.3 nm for the aspheric lens forming core and Ra = 4.4 nm and Rt = 41.9 for the spherical lens forming core. These values were found to be sufficiently low, and the cores showed good compatibility between SiC and the diamond-like carbon (DLC) coating material. Thus, these glass lens forming cores have great potential for application in the lens industry.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.23.2-23
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• 2002

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.191-193
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC-39vol.% $TiB_2$ and using 61vol.% SiC-39vol.% $ZrB_2$ powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the SiC-$TiB_2$, and SiC-$ZrB_2$ composites. The ${\beta}\;{\alpha}$-SiC phase transformation was occurred on the $SiC-TiB_2$, $SiC-ZrB_2$ composites. The relative density, the flexural strength and Young's modulus showed respectively value of 98.57%, 226.06Mpa and $86.37{\times}10^3Mpa$ in SiC-$ZrB_2$ composites.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1417-1423
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• 1995

α/β sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the α to β phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phse transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si3N4 whisker and rim being β-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300℃ to be about 130 MPa lower than that measured at RT for the whisker reinforced composites.