• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.632-636
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.37-45
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• 2002

In this paper, the microwave characteristics of traveling-wave electroabsorption coplanar waveguide modulator have been analyzed and optimized precisely by using the 3-dimensional finite-difference time-domain method (FDTD). Microwave characteristics are affected by the thickness of intrinsic layer, the width of meas, and the distance between signal electrode and ground electrode on traveling-wave type structure. In case that intrinsic layers are composed of InAsP/InGaP (1.3Q), the optimized distance between signal electrode and ground electrode, the optimized intrinsic region thickness and the width of waveguide are founded to be $3{\mu}m,\;039{\mu}m\;and\;2{\mu}m$, respectively, to minimize microwave loss and to obtain velocity and impedance matched structure. By using the FDTD, we could design the traveling-wave electroabsorption modulator more precisely.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.62-70
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• 1984

N+NPP+ HLEBSF (high low emitter back surface field) solar cells which have N+N high low junction in the emitter as well as N+PP+ BSF cells were designed and fabricated by using <111> oriented P type Si wafers with the resistivity of 10$\Omega$/$\textrm{cm}^2$ and the thickness of 13-15 mil. Physical parameters (impurity concentration, thickness) at each region of N+PP+ and N+NPP+ cell were made equally through same masks and simultaneous process except N region of HLEBSF cell to investigate the high low emitter junction effect for efficiency improvement. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area (active area) conversion efficiency were typically 10.94% (12.16%) for N+PP+ BSF cells and 12.07% (13.41%) for N+N PP+ cells. Efficiency improvement of N+NPP+ cell which has high low emitter Junction structure is resulted from the suppression of emitter recombination current and the increasement of open circuit voltage (Voc) and short circuit current (Ish) by removing heavy doping effects occurring in N+ emitter region.

• Journal of Environmental Science International
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• v.12 no.3
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• pp.265-274
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• 2003

The Pasquill-Gifford stability category is a very important scheme of the Gaussian type dispersion model defined the complex turbulence state of the atmosphere by A grade(very unstable) to F grade(very stable). But there has been made a point out that this stability category might decrease the predictability of the model because it was each covers a broad range of stability conditions, and that they were very site specific. The APSM (Air Pollution Simulation Model) was composed of the turbulent parameters, i.e. friction velocity(${\mu}$$\_$*/), convective velocity scale($\omega$$\_$*/) and Monin-Obukhov length scale(Ｌ) for the purpose of the performance increasing on the case of the unstable atmospheric conditions. And the PDF (Probability Density Function)model was used to express the vertical dispersion characteristics and the profile method was used to calculate the turbulent characteristics. And the performance assessment was validated between APSM and EPA regulatory models(TEM, ISCST), tracer experiment results. There were very good performance results simulated by APSM than that of TEM, ISCST in the short distance (<1415 m) from the source, but increase the simulation error(%) to stand off the source in others. And there were differences in comparison with the lateral dispersion coefficient($\sigma$$\_$y/) which was represent the horizontal dispersion characteristics of a air pollutant in the atmosphere. So the different calculation method of $\sigma$$\_$y/ which was extrapolated from a different tracer experiment data might decrease the simulation performance capability. In conclusion, the air pollution simulation model showed a good capability of predict the air pollution which was composed of the turbulent parameters compared with the results of TEM and ISCST for the unstable atmospheric conditions.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.12
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• pp.1671-1674
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• 2014

This paper presents a frequency-dependent cell impedance analysis chip for use in cancer and normal cell discrimination. The previous cell impedance analysis chips for flowing cells cannot allow enough time for cell-to-electrode contact to monitor frequency-dependent impedance response. Another type of the previous cell impedance analysis chips for the cells clamped by membranes need complex sample control for making stable cell-to-electrode contact. We present a new impedance analysis chip using the microchamber array, on which a PDMS cover is placed to make stable cell-to-electrode contact for the individual cell trapped in each microchamber; thus achieving frequency-dependent single-cell impedance analysis without complex sample control. Compared to the normal cells, the magnitude of NHBE cells is $60.07{\sim}97.41k{\Omega}$ higher than A549 cells in the frequency range of 95.6 kHz~2MHz and the phase of NHBE is $3.96^{\circ}{\sim}20.8^{\circ}$ higher than A549 cells in the frequency range of 4.37 kHz~2MHz, respectively. It is demonstrated experimentally that the impedance analysis chip performs frequency-dependent cell impedance analysis by making stable cell-to-electrode contact with simple sample control; thereby applicable to the normal cell and cancer cell discrimination.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Wind and Structures
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• v.17 no.6
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• pp.647-670
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• 2013

The paper presents a numerical approach to study of fluid flow characteristics and to predict performance of wind turbines. The numerical model is based on Finite-volume method (FVM) discretization of unsteady Reynolds-averaged Navier-Stokes (URANS) equations. The movement of turbine blades is modeled using moving mesh technique. The turbulence is modeled using commonly used turbulence models: Renormalization Group (RNG) k-${\varepsilon}$ turbulence model and the standard k-${\varepsilon}$ and k-${\omega}$ turbulence models. The model is validated with the experimental data over a large range of tip-speed to wind ratio (TSR) and blade pitch angles. In order to demonstrate the use of numerical method as a tool for designing wind turbines, two dimensional (2-D) and three-dimensional (3-D) simulations are carried out to study the flow through a small scale Darrieus type H-rotor Vertical Axis Wind Turbine (VAWT). The flows predictions are used to determine the performance of the turbine. The turbine consists of 3-symmetrical NACA0022 blades. A number of simulations are performed for a range of approaching angles and wind speeds. This numerical study highlights the concerns with the self-starting capabilities of the present VAWT turbine. However results also indicate that self-starting capabilities of the turbine can be increased when the mounted angle of attack of the blades is increased. The 2-D simulations using the presented model can successfully be used at preliminary stage of turbine design to compare performance of the turbine for different design and operating parameters, whereas 3-D studies are preferred for the final design.