• Title/Summary/Keyword: $\Omega$ Type

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Fabrication and characterization of (개구결합을 이용한 H 형태 초전도 안테나의 제작 및 특성 해석)

  • Chung, Dong-Chul;Han, Byoung-Sung;Ryu, Ki-Su;Lee, Jong-Ha;Sok, Jung-Hyun;Lee, Eun-Hong
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.1
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    • pp.63-69
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    • 2000
  • The high-$T_c$ Superconducting (HTS) antenna which consists of "H" type resonator has the benefits for the miniaturization of antenna in comparison with the microstrip antenna of the similar dimension. To fabricate the "H" type antenna, HTS $YBa_2Cu_3O_{7-x}$ (YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. Standard etching processes were performed for the patterning of the "H" type antenna. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between $50{\Omega}$ feed line and HTS radiating patch. The diverse experimental results were reported in terms of the resonant frequency, the return loss and the characteristics impedance. The "H" type superconducting antenna showed the performance of 1.36 in SWR, 24% in efficiency, and 14.6 dB in the return loss superior of the normal conducting counterpart.

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Boron doping with fiber laser and lamp furnace heat treatment for p-a-Si:H layer for n-type solar cells

  • Kim, S.C.;Yoon, K.C.;Yi, J.S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.322-322
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    • 2010
  • For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

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Photoluminescence properties of N-doped and nominally undoped p-type ZnO thin films

  • Jin, Hu-Jie;Jeong, Yun-Hwan;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04a
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    • pp.65-66
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    • 2008
  • The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

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Annealing Effect on the Characteristics of Thin Film Inductors with Inner Coil Type (내부 코일형 박막 인덕터의 특성에 미치는 열처리 효과)

  • Min, Bok-Gi;Kim, Hyeon-Sik;Song, Jae-Seong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.333-338
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    • 1999
  • Thin film inductors of $10 mm \times 10 mm$ with inner coil type of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their characteristics of impedances and annealing after were investigated. The properties of impedances of the thin film magnetic core inductors with inner coil type were improved by magnetic field annealing due to the removal of residual stress and the improvement magnetic properties of magnetic films. But the characteristics of frequency of the thin film magnetic core inductors were not improved by magnetic field annealing due to properties of the spiral pattern and inner coil type. The thin film magnetic core inductor annealed by uniaxal field annealing method showed an inductance of 1000 nH and resistance of$ 6 \Omega$ of 1 at 2 MHz.

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Development of Shampoo Formulated by EPA for the Damaged Hair (손상 모발을 위한 EPA 함유 샴푸 개발)

  • Lee, Bo-Reum;Lee, Ok-Sang;Kang, Tae-Jin;Lim, Sung-Cil
    • Korean Journal of Clinical Pharmacy
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    • v.21 no.3
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    • pp.256-269
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    • 2011
  • Omega-3 fatty acids are a specific type of unsaturated fat that the body cannot manufacture on its own, so they must be obtained from food which is essential fatty acids (EFAs). Omega-3 fatty acids consist of three types which are a-Linolenic Acid (ALA), Eicosapentaenoic (ELA), and Docosahexaenoic Acid (DHA). Especially, EFAs help to prevent skin and hair drying, acne, eczema, prevention from allergies, brittle nails, rashes, and tiny lumps. The aim of this study is to investigate improvement and protection for hair damaged by chemical treatment with omega-3 formulated shampoo. We selected virgin hair sample and divided into two groups for bleaching once and three times and then damaged hair by changing the number of hair bleaching (twice with interval of 15 minutes). Each bleached hair was treated by five different kinds of shampoo (Control, Horse shampoo, DHA shampoo, EPA shampoo, Omega-3 shampoo mixture). Apart from this, EPA/DHA 2, 5, 8, 10 and 12% shampoo were prepared and treated to hair for comparing rate of progress in damaged hair. To quantify improved condition of damaged hair, we performed Scanning Electron Microscope (SEM) for ultrastructure of damaged hair fraction, measurement of thickness change and BCA Protein Assay for recovery rate of damaged hair. The moisture in hair was measured by Thermal analysis machine. In results, we observed the particle of hair surface damaged by bleaching treatment were well improved with treatment with EPA and DHA shampoo. Also, quantity of protein was lowered with higher concentration of EPA & DHA i.e., 8 and 12 % then compared with horse oil shampoo in three times treatment group. It shows that bleached hair have been recovered by treating rapidly and get protective coat. In conclusion, EPA and DHA shampoo improved damaged hair, especially with EPA / DHA 12% shampoo. Also, EPA shampoo could protect the damaged hair depending on increasing concentration of EPA. Therefore, we conclude omega-3 shampoo could make damaged hair protect and get healthy hair environment.

Field Evaluation of Particulate Control Efficiency of Electrostatic Precipitator in Thermoelectric Power Plant Associated with Addition of Triethyl Amino(TEA) (트리에틸아민 첨가에 따른 열병합발전소 전기집진장치의 집진효율 특성의 현장 평가)

  • Jo, Wan-Kuen;Jeon, Ok-Sang
    • Journal of Korean Society of Environmental Engineers
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    • v.27 no.4
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    • pp.445-449
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    • 2005
  • Present study was designed to evaluate the practical application of triethyl amine(TEA) injection for improving the collection efficiency of electrostatic precipitator(ESP) connected to a real operating plant. The major fuels used at the domestic power stations were bituminous coals imported from Australia, China, South Africa, and USA. Although the values of the electric resistance would be more or less different according to the type of the coals used, the unique electric resistance values of fly ash from the coals were mostly higher than $1{\times}10^{12}\;{\Omega}-cm$ and therefore, back corona problems were always expected to occur in the electrostatic precipitator. The particulates concentrations, smoke concentrations and their electric resistivity measured at the outlet of ESP, and the inspection of collection indicated that the injection of TEA improved the collection efficiency of particulate at collection plates of ESP. The electric resistance for, fly ash with the injection concentration of TEA 15 ppm(Purity 99.7%) was lowered to $2.1{\times}10^{11}\;{\Omega}-cm$ after injection from $1.9{\times}10^{12}\;{\Omega}-cm$ before injection. Under this condition, the dust emission content at the stack was reduced to approximately 80%, lowering the average outlet concentrations of particulates from $70\;mg/Sm^3$ to $14\;mg/Sm^3$.

Pd/Si-based Emitter Ohmic Contacts for AlGaAs/GaAs HBTs (AlGaAs/GaAs HBT 에미터 전극용 Pd/Si계 오믹 접촉)

  • 김일호
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.218-227
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    • 2003
  • Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

Galvanic Anode Charactristics of Grounding Cell Design for Corrosion Protection of Pipings (배관 방식용 접지전지 설계를 위한 유전양극의 특성에 관한 연구)

  • 임우조
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.19 no.1
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    • pp.57-62
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    • 1983
  • The galvanic anodes have three kinds of Zn alloy anode, Al alloy anode and Mg alloy anode, which are widely used in cathodic protection for all metal structures in water or under ground. This paper to be used for designing of the grounding cell has reached the following conclusion as the results of an experimental study on the characteristics of such galvanic anodes for corrosion protection of pipings: 1) Zn alloy anode was the best when the specific resistance of the environment was bellow 1000 $\Omega$.cm, and when above 1000 $\Omega$.cm, Mg alloy anode to be used for designing of the grounding cell was the best. 2) Al alloy anode was better than Mg alloy anode for grounding cell when the specific resistance was bellow 500 $\Omega$.cm, but the Al alloy anode in all the environments reduced the characteristics of galvanic anode to the lower grade than those of Zn alloy anode. 3) Each impressed voltage (E) of the anodes at which drainage current density ($\rho$) begins rapidly increasing is quantitatively presented as follows: \circled1 E sub(Zn)=log (4.9465/$\rho$super(0.0639))+11$\times$10 super(-6)$\rho$super(0.8923i) \circled2 E sub(Al)=log (4.9306/$\rho$super(0.0525))+13$\times$10 super(-6)$\rho$super(0.9314i) \circled3 E sub(Mg)= log (3.7086/$\rho$super(0.0988))+181$\times$10 super(-6)$\rho$super(0.5406i) 4) The empirical equations between the drainage current density (i) and impressed environment are modeled as the following type. logi=g+root(n.E+r)(g,n,r; constants)

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Influence of Ion Isolation on the Resistivity of Different Types of GaN

  • Johra, Fatima Tuz;Jung, Woo-Gwang
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.237.1-237.1
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    • 2011
  • Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.

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Electrical Characteristics of the Hexagon-type Piezoelectric Transformer (육각형 압전변압기의 전기적 출력 특성)

  • Lee, Jong-Pil;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.296-299
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    • 2002
  • In this paper, a hexagon-type piezoelectric transformer was investigated to increase the output power. The length of its side was 14mm and 17.5mm, respectively. The piezoelectric ceramics was composed to PZT-PMN-PSN. This composition showed the characteristics which had an about 1500 of the mechanical Q-factor, 0.55 of the electromechanical coupling coefficient, $320{\times}10^{-12}C/N$ of the piezoelectric constant $d_{31}$, 0.3 % of the dissipation factor, etc. The voltage step-up ratio increased with increasing the load resistance, $R_{L}$, so it reached 80 with $R_{L}$ of $1M{\Omega}$ and was proportion to the length of side of the hexagon-type piezoelectric transformer. Also, the output power increased with increasing the size of the hexagon-type piezoelectric transformer.

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