• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.535-542
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• 1995

The effect of sintering temperature, sintering time and forming pressure on microwave dielectric properties of (Zr1-xSnx)TiO4 ceramics containing 1.0wt% B2O3, 0.3 wt% La2O3 and 1.0wt% NiTa2O6 was investigated using the response surface methodology. The optimum values of processing variables were determined based on the reproducibility. The optimum values of the dielectric constant of >35. Q.f0 of >55000 and $\tau$f=$\pm$5 ppm/$^{\circ}C$ could be obtained when the sample was pressed at 500~600kg/$\textrm{cm}^2$ and sintered at 1500~155$0^{\circ}C$ for 2~3 hrs.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.220-228
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• 1991

본 연구에서는 핫프레스법으로 제작된 0.05Pb(Sn$_{1}$2/Sb$_{1}$2/)O$_{3}$-0.60PbZrO$_{3}$-0.35PbTiO$_{3}$+x[wt%]MnO$_{2}$ 세라믹스에 대해 구조적, 전기적 특성 및 탄성 표면파 특성을 조사하였다. x가 0.4인 조성을 1150[.deg.C]에서 45분간 소성한 시편의 경우 탄성표명파의 전기 기계 결합 계수 k$_{s}$ $^{2}$가 2.8[%], 기계적 품질 계수 Q$_{m}$ 이 1976으로 탄성 표면파 소자용 기판으로서 응용 가능함을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.74-76
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• 1989

x Pb($Sb_{1/2}Sn_{1/2}O_3-PbTiO_3-PbZrO_30.05{\leq}x{\leq}0.25$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1200-1270[$^{\circ}C$], 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.25 PSS-0.25 PT-0.5 PZ specimens were 450, 220[$^{\circ}C$]. The Pyroelectric coefficient of the 0.25PSS-0.25PT-0.50 PZ specimen was $5.20{\times}10^4$[C$\textrm{cm}^2$K].

• Journal of the Korean Chemical Society
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• v.27 no.4
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• pp.273-278
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• 1983

With the synthetic standards, valuable metals $(Ta_2O_5, Nb_2O_5, TiO_2, SnO_2$, and $ZrO_2$) in the tin slags have been determined by the x-ray fluorescence spectrometry. The powder sample and the standards are homogeneously mixed with anhydrous $Li_2B_4O_7$ and La_2O_3$ in weight ratio of 15 : 42 : 3 respectively. The mixed material is fused at $1,150^{\circ}C$ for 30 minutes to be changed into the glass bead. The bead is ground to (-) 325 mesh size and pelletized. The analytical results obtained in this work are consistent with the data obtained by other common methods within allowable error range. The standard deviation for $Ta_2O_5$ in PTS-H sample is 0.12 % at level of 3.40 % content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.589-598
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• 1997

The effects of PT/PZ ratio variations in a modified PZT system on crystal structure and electrical properties were studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋xPbTiO_3＋yPbZrO_3$＋0.4Wt% $MnO_2$(＝0.55PSS＋0.11PT＋0.84PZ＋0.4wt%$MnO_2$ ; x＋y=0.95) systems with variations of PT/PZ from 0.50/0.45 to 0.l1/0.84 were sintered at $1250^{\circ}C$ for 2 hr, and then sintering density, crystal structure, dielctric, piezoelectric, pyroelectic and voltage responsity to infrared were investigated. Sintering density was increased from 7.52g/$\textrm {cm}^3$ to 7.82g/$\textrm {cm}^3$ with increasing PZ content. Dielectric constants at 1 KHz were decreased from 1147 to 193 with variation of PT/PZ from 0.50/0.45 to 0.l1/0.84 after poling of $4 KV_{DC}$/mm at $140^{\circ}C$ for 20 minutes. All Dielectric losses at 1 KHz were less than 1 % in all specimens. $K_{p}$ was increased near to 1 of PT/PZ, and maximun value of 48.2 % was .at 0.45/0.50. Pyroelectric coefficient of PT/PZ with 0.l1/0.84 was maximun value, 0.0541 C/$\m^2$K, and voltage responsity to infrared was 1.5 V.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.10-13
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• 1993

ln this study, x PSN - y PT - z PZ ceramics doped with w MnO$_2$were fabricated by the mixed oxide method at 1250[$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt.%] MnO$_2$, the pyroelectric coefficient was 6.6${\times}$10$\^$-8/[C/cm$^2$$.$$^{\circ}C$], respectibly.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1496-1498
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• 1994

In this study, x PSN - y PT - z PZ ceramics doped with w $MnO_2$ were fabricated by the mixed oxide method at 1250 [$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt%] $MnO_2$ the Pyroelectrics coefficient was $6.6{\times}10^{-8}[C/cm^2.^{\circ}C]$, respectibly.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.108-108
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• 2000

급증하는 무선통신 정보수요는 특히, 고주파대역 (300NHz-300GHz)에서 사용되는 공진기, 필터, 발진기 등과 같은 소자의 품질향상을 요구하고 있다. 고주파용 유전체 중 ZrTiO4 는 $\alpha$-PbO2 계열의 사방정구조를 갖고 있는 유전체로서 높은 유전율 ($\varepsilon$=40)과 높은 품질계수 (Q=1/tan$\delta$=4700 at 7GHz)를 갖고 있고, Sn 첨가시 0ppm/$^{\circ}C$의 공진주파수 온도계수를 얻을 수 있다고 보고되어 있다. 본 연구에서는 약 110$0^{\circ}C$ 이상에서 안정한 상으로 존재하는 ZrTiO4를 저온에서 증착하여 준안정한 상태로 결정화되게 한후, 유전손실 (tan$\delta$)과 유전율($\varepsilon$)을 측정하였다. 또한 증착온도와 열처리과정에 따른 박막의 us형 (Strain) 정도의 변화를 X-선 회절결과로부터 분석하였으며 이를 측정된 유전특성 값과 비교하였다. ZrTiO4 박막은 DC magnetron reactive sputter로 Zr과 Ti 타겟으로부터 high phosphorous doped Si (100) 기판위에 증착하였다. 압력은 4mTorr로 유지하고 박막의 화학양론적 조성비를 맞추기 위해 각 타겟에 가해지는 power는 Zr/Ti=500W/650W로 고정하고, 반응가스의 비율을 Ar/O2=17sccm/3.5sccm으로 유지하여 박막내에 인입되는 산소량을 제어하였다. 증착 직후와 열처리 후의 박막특성을 비교하기 위해 증착온도를 상온에서부터 $600^{\circ}C$까지 변호시키고 증착후 각각의 시편을 80$0^{\circ}C$ 산소분위기에서 2시간동안 열처리하여 시편을 준비하였다. 박막의 상형성 여부와 결정성변화는 $ heta$-2$\theta$X-선 회절법을 사용하여 조사하였고, EPMA를 이용하여 박막의 조성을 확인하였다. 유전특성의 측정을 위해 백금 상부전극을 증착한 후, impedance analyzer를 이용하여 100kHz 영역에서의 유전손실을 측정하고, 측정된 정전용량과 박막의 두께로부터 유전율을 계산하였다. ZrTiO4 박막은 증착온도 20$0^{\circ}C$ 이상에서 결정성을 보이기 시작했으며, 열처리 이후에는 상온에서 비정질이었던 시편이 $650^{\circ}C$ 이상의 온도에서 결정화되기 시작하였다. 증착온도에 따라 유전손실은 0.038에서 0.017 정도로 감소하는 경향을 나타냈으며, 각각 열처리에 의해서 0.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.9-17
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• 1998

The dependence of the ionic conductivity on the B-site ion substitution in (Li0.5La0.5)Ti1-xMxO3 (M=Sn, Zr, Mn, Ge) system has been studied. Same valence state and various electronic configuration and ionic radius of Sn4+, Zr4+, Mn4+ and Ge4+(4d10(0.69$\AA$), 4p6(0.72$\AA$), 3d10(0.54$\AA$) and 3d3(0.54$\AA$), respectively) induced the various crystallographic variaton with substitutions. So it was possibleto investigate the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic variations. We found that the conductivity increased with decreasing the radii of B-site ions or vice versa and octahedron distortion disturb the ion conduction. The reason for this reciprocal proportion of conductivity on the radius of B-site ions has been examined on the base of the interatomic bond strength change due to the cation substitutions. The results were good in agreement with the experimental results. Therefore it could be concluded that the interatomic bond strength change due to the cation substitutions may be the one of major factors influencing the lithium ion conductivity in perovskite(Li0.5La0.5) TiO3system.