권호 표지

한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers) (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)

  • 격월간
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)

Aim & Scope

The Journal of the Korean Institute of Electrical and Electronic Material Engineers is published 6 times annually by the Korean Institute of Electrical and Electronic Material Engineers (KIEEME). Abbreviated title is ‘J. Korean Inst. Electr. Electron. Mater. Eng.’. It was launched in 1988. It is devoted to reports of original short communications, research and review articles. The J. Korean Inst. Electr. Electron. Mater. Eng. encompasses all types of semiconductor, electronic ceramics, insulation materials, thin films and sensors, display and optical devices, superconductor and magnetic materials, high voltage and discharge engineering, nano and oxide electronics, energy materials, technology education, light source and application technology, and disaster prevention materials, and so on. Full text is freely available from: http://www.jkieeme.org/paper/intro/intro03.htm. It is printed on acid-free paper. Indexed in Korea Citation Index.

http://www.jkieeme.org KSCI KCI

제11권8호

  1. 이호식;이원재;김태완;;강도열 581
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    This paper describes athermally stimulated displacement current (TSDC) of arachidic acid(AA) and polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of AA LB film were performed from temperature to about 11$0^{\circ}C$ at a rate of 0.2$^{\circ}C$/ｓ inside a vacuum chamber for a reference. And the TSDC measurements PAAS LB film were performed from room temperature to about 25$0^{\circ}C$ and temperature was increased at the same rate as that of AA LB film. They show that there are TSDC peaks at about 7$0^{\circ}C$ in the arachidic acid LB films, and at about 7$0^{\circ}C$ and 16$0^{\circ}C$ in the PAAs LB films. Results of these measurements indicate the one small peak at 7$0^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at 16$0^{\circ}C$ is possibly due to dipole of C-O group in the PASS molecule. We have calculated the vertical component of the AA and PAAs L film out of the TSDC curves. It shows that the dipole moment of the AA LB film is about 70-mD at 7$0^{\circ}C$. And the dipole moment of PAAS LB film is about 040mD at 7$0^{\circ}C$ and about 200mD at 16$0^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PASS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.
  2. 차영호;권태하;최혁환 587
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    Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.
  3. 김동철;박봉태;고중혁;문병무 596
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    A method for the nondestructive read-out of the memory in ferroelectric thin films is demonstrated using the detection second harmonic currents introduced in the ferrolelectric capacitor as a response to an ac signal. The sign and phase of the second harmonic current depends on the polarized state +$P_r or -P_r$, The studied ferroelectric PZT thin film is found to have desirable features for the use as a memory element. This method and material seems as a promising approach for the nonvolatile memory storage.
  4. 정운조;박계춘 601
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    ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times10^{-4}\Omega\cdot{cm}$) and then carrier concentration and Hall mobility were $6.27\times10^{20} cm^{-3} and 22.04 cm^2/V\cdot$s, respectively. The undoped ZnO thin film had about 10$\times10^{14}\Omega\cdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$\times$1.0 \ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.
  5. 신재균;현준원;박상규 607
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    RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.
  6. 김철수;정규원;송준태 613
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    Ultrasonic probes of 400kHz, 1MHz were fabricated using PZT-5Z plates. Epoxy was used for backing layer materials onthe plates. Nondestructive Test was carried using these probes. Pulse lobe width of impulse response was reduced 15.4% compare 1MHz with 400kHz and 96.6% compare 3MHz with 400kHz. The attenuation in aluminum was 2.05[dB/m] at 400kHz, 4/91[dB/m] at 1MHz, 7.35[dB/m] at 3HMz. Hole detection error of the first hole was 22.4% at 1HMz, 9.% at 3HMz, The second hole 11.6% at 1HMz, 4.7% at 3HMz. In the result of experiment of the hole detection error and resolution, 3HMz probe was the best among them.
  7. 민남기;이치우;하동식;정우식 620
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    For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.
  8. 정용호;이우선 628
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    LB layers L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multiayers was determined by ellipsometry. Ut was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitiance and low lekage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLD capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.
  9. 김성구;한상필;윤형도;임영민;윤대원;정운조;박계춘;정해덕 637
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    The characteristics of waveguide, electrode and packaging fabricated for acousto-optic tunable filters(AOTF) used for optical communications were analyzed. A $Ti:LiNbO_3$in-diffusing method was employed for the formation of the optical waveguide with a dimension of width $8{\mu}m$, length $30000-50000{\mu}m$ and varying the thickness. The diffusion was carried at $1050^{\circ}C$ for 8 hours to pattern the optical waveguide. The resulted waveguide exhibited a single mode at 1550nm optical wavelength. The width of IDT, with 10 SAM periods, was $5000{\mu}m$ . Impedances of the electrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at the center frequency of 193MHz for electrode thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for $1600\AA$. And the characteristics of packaged AOTF was analyzed. When the electrical frequency 177.1MHz was applied to the device, the mode conversion efficiency was measured as 63% at the optical wavelength 1515nm.
  10. 박용규;한정인;곽민기;이인규;김대현 646
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    In this present study, the luminescence characteristics and mechanism of energy $CaTiO_3$:Pr phosphor were studied using disk specimens sintered at various temperatures and envirenment. A single-phase $CaTiO_3$:Pr was synthesized by sintering above 140$0^{\circ}C$ and its crystal structure was found to be perovskite orthorhombic. A dominant peak around 360 nm and a broad peak around 395 nm were observed in the PLE(Photoluminescence Excitation) spectrum of $CaTiO_3$:Pr with fixed emission wavelength at 612 nm, the decay time of 360 nm excitation was found to be longer than that of 395 nm excitation. From this result, it is assumed that the free carrier excited to 360 nm is transferred to 395 nm energy level. Therefore, the decrease in 395 nm intensity observed in CaTiO$_3$:Pr specimens sintered in Ar gas environment induced shorter decay time and improved CL luminescence.
  11. 김명호;장경욱;부정기 652
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    We have performed spin-spray ferrite plating of $Fe{_3}{-X}-Ni_XO_4$(X=0.17~0.26) films in the temperature region $T=80~95[^{\circ}C]$. A reaction solution and an oxidizing solution were supplied to a reaction chamber by supply pump. The solubility limit of Ni increases as the substrate temperature increase, from X=0.17 at $80[^{\circ}C]$ to X=0.26 at $95[^{\circ}C]$. All the films are polycrystalline with no preferential orientation, and the magnetization exhibits no definite anisotropy. Grain size in the films increases as X increases, reaching $0.87[\mu{m}]$ at X=0.26.
  12. 최동진 658
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    Ferrite plating enables were grown by ferrite by plating method in solution at low temperature(<10$0^{\circ}C$). This faciltates the fabrication of new ferrite thin film devices using non- heat-resistant materials(plastic, GaAs ect) as substrates. Combining the ferrite plating with sonochemistry, application of power ultrasonic waves to stimulate chemical reactions, the crystallinity and qualities of films were improved. Modifying the reactions cell and plating conditions further improved the film quality.
  13. 유재근;장건익;장중철;홍계원 664
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    고순도의 Bi(Pb)-Sr-Ca-Gu-O 초전도 분말의 얻기 위하여 액상법의 하나인 이멀젼 건조방법이 응용되었다. 다양한 합성 변수 중 오일과 용액의 계면활설제의 혼합비율을 조정하여 고순도의 Bi(Pb)-Sr-Ca-Gu-O 초전도 분말을 성공적으로 얻을 수 있었다. 이 공정의 최적 혼합비율은 70:20:10이였다. 관측된 분말을 구형이었으며 마이크론 크기 이하의 균일한 크기를 보였다. 최적의 소결조건에 한에 $840^{\circ}C$ 50시간의 열처리를 통하여 거의 108K를 갖는 초전도 분말이 얻어졌다.