This paper proposes reservation-based multiple access with variable frame length (RMAV) which is a new multiple access scheme for indoor and outdoor wireless data communications. RMAV is based on the slot reservation scheme and adopts a frame structure with variable frame length. The frame length increases as the number of active terminals and/or the system load increases. As a result, RMAV is adapted to the changes in the traffic pattern, and it offers short delay in light load conditions and high throughput in heavy load conditions. The performance of RMAV is evaluated by simulations. In addition, it is compared with the performance of PRMA(packet reservation multiple access).

Despite recent advances in electrical switch architectures, the practical switch performance is limited by both the technological and physical constraints of electrical device and wiring. Though an optical switch can have good features, optical devices are of poor quality. Therefore, we propose and study the switching architecture based on free-space optical interconnections and electrical logic devices. And an exchanging method using packets with a parallel form is introduced to solves the blocking problem of the switch that resulted from switching packets with a serial form. The free-space optical interconnections overcome the defects of electrical switch, such as, the complex connections of the wires. The proposed and demonstrated switch is nonblocking, simple and high performable. Other attractive features of the proposed switch include the guarantee of first-in first-out packet sequence. In this thesis, we also discuss the performance of proposed switch and show the experimental results of the 4$\times$4 switch.

A ($Pb_{1-x}Ca_{x})ZrO_{3}$ system which has a high dielectric constant, low dielectric loss and temperature coefficient was investigated. For sintering temperatures above 1350$^{\circ}C$ the microstructures of sintered bodies were unchanged regardless of the amount of CaO. The dielectric constant and dielectric loss decreased and the temperature coefficient varied from positive to negative with the increasing amount of CaO. For the CaO content of 0.37, i.e. ($Pb_{0.63}Ca_{0.37})ZrO_{3}$, the ceramic showed very good dielectric properties such as ${\varepsilon}_1$=100, Q > 1200 at 3GHz, and T$_f$=$\pm$3ppm/$^{\circ}C$.

A new design method of microstrip wide band VHF tunable bandpass filters using varacter diodes is presented. In the proposed filter both the input and output ports are coupled through capacitors, and an open micro-strip line is inserted between the coupled line in order to obtain the desired degree of coupling. The optimized filter responseses for the frequency range of 220-404MHz by TOUCH-STONE are compared with the measured ones.

JFET's with gate lengths ranging from 1$\mu$m to 8.3$\mu$m are successfully fabricated on InP substrate where the long haul (1.3$\mu$m~8.3$\mu$m) OEIC's(OptoElectronic Integrated Circuits) have been made. The pn junction of InP JFET's is made by co-implantation and RTA process. JFET's have etched-mesa-gate structure and the maximum gm larger than 90mS/mm was measured and this is the highest record in JFET's of such structure without S/D n$^{+}$ ion implantation. To maintain maximum g$_m$ should be well controlled the overetch of n-layer which inevitably occurs during etching off the unused p-layer. The I-V characteristic is checked during p-layer etch, for this purpose. A dc voltage gain of 11 is obtained from a preamplifier circuit thus fabricated.

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

RoA is an important figure of merits for estimating the performance of p-n junction infrared detectors. This paper presents the tunneling current contribution to RoA of $Hg_{1-x}Cd_{x}$Te n$^{+}$-p juction photodiodes. Then, a diffusion model, a thermal generation-recombination model, an indirect tunneling model via trap, and a band-to-band direct tunneling model are considered to calculate RoA. Using these models, RoA depending on temperature, doping concentration, and mole fraction is calculated. Also from these results, under various operating conditions the dominant dark current mechanisms cna be understood.

A new global routing algorithm which dynamically adjusts its cost parameters depending on the given routing poroblem to find a near optimum solution has been developed. The proposed algorithm efficiently performs global routing on general area in which all the pin positions are given. This algorithm is composed of two phases`In the first phase, it routes each net by searching a minimum cost path while ignoring the channel capacity. In the second iterative phase, it rips up nets which pass the channel at which the horizontal or vertical routing density exceeds the capacity and then it reroutes them using a modified set of cost parameters. Applying the above phases, paths for nets are found such that routing density doesn't exceed the capacity in each channel and that nets are routed with minimum cost. Experimental results for several benchmark examples including difficult-4, difficult-8, difficult-16, Primary1 and Primary2 show that our method generates better results than other published ones.