Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Joining of Mullite (3Al2O3·2SiO2) Ceramics for Semiconductor Back-End Process by Reaction-Bonded Aluminum Oxide (RBAO) Process

반응소결 알루미나 공정 (RBAO)을 이용한 반도체 후공정용 뮬라이트(3Al2O3·2SiO2) 세라믹스 접합

  • Tae-Gyeong Kim (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) ;
  • Hyun-Kwuon Lee (School of Advanced Materials Science and Engineering, Kumoh National Institute of Technology)
  • 김태경 (국립금오공과대학교 신소재공학부) ;
  • 이현권 (국립금오공과대학교 신소재공학부)
  • Received : 2024.08.15
  • Accepted : 2024.09.12
  • Published : 2024.09.30
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Abstract

In this study, we report on the joining of mullite ceramics using the reaction-bonded aluminum oxide method without applying any external pressure, in consideration of a possible multilayer ceramic substrate in semiconductor back-end process. For this purpose, Al/Al2O3/SiO2/Mullite powder mixture paste was applied to the joining surfaces between two parent mullite bodies of the same composition, and then sintered at 1,650 ℃ for 2 h in air, resulting in a dense and rigid mullite ceramic joints. Phase and microstructural analysis of the joined mullites showed that the reaction bonding by Al oxidation and thereafter mullite formation were completed during the heat treatment process. However, due to the difference in sintering behavior between the parent body and the joining layer, few pore of which size proportional to the joining layer thickness, were observed at some parts of the joining interface. The formation of the pore and its causes was discussed.

Keywords

Acknowledgement

본 연구는 국립금오공과대학교 교수연구년제에 의하여 연구된 실적물입니다.

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