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Effect on the Double Stacked SiNX/SiOX Layers for n-type Bifacial Crystalline Silicon Solar Cells

n형 양면 결정질 실리콘 태양전지의 SiNx/SiOx 이중층 영향에 관한 연구

  • Hyeong Gi Park (Department of Renewable Energy, Samarkand International University of Technology (SIUT)) ;
  • Jinjoo Park (Department of Energy Convergence, Cheongju University) ;
  • Junsin Yi (College of Information and Communication Engineering, Sungkyunkwan University)
  • 박형기 (재생에너지학과, 사마르칸트 국제 기술 대학) ;
  • 박진주 (에너지융합공학과, 청주대학교) ;
  • 이준신 (정보통신대학, 성균관대학교)
  • Received : 2024.08.30
  • Accepted : 2024.09.19
  • Published : 2024.09.30

Abstract

This study explored the effect of double-stacked SiOX/SiNX layers on the passivation quality of n-type bifacial crystalline Si solar cells. SiOX layers were deposited via PECVD under various conditions on n-type silicon wafers with a boron emitter. These layers were capped with SiNX and thermally treated to optimize the passivation. The optimal conditions resulted in a minority-carrier lifetime of 268 μsec and an implied VOC of 692 mV. The optimized SiOX layer had a low interface defect density and high fixed negative charge. When applied to n-type solar cells, the SiOX/SiNX stack improved the performance, achieving a VOC of 646 mV, JSC of 39.3 mA/cm2, FF of 78.06%, and efficiency of 19.82%, demonstrating the potential for higher efficiency in n-type silicon solar cells.

Keywords

References

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