Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Study of the Operational Characteristics of Photodetectors Using Gallium Oxide

산화 갈륨을 활용한 광검출 소자의 동작 특성 분석 연구

  • Hak Jun Ban (Seoul National University of Science and Technology) ;
  • Seung Won Lee (Seoul National University of Science and Technology) ;
  • Seul Ki Hong (Seoul National University of Science and Technology)
  • 반학준 (서울과학기술대학교 지능형반도체공학과) ;
  • 이승원 (서울과학기술대학교 지능형반도체공학과) ;
  • 홍슬기 (서울과학기술대학교 지능형반도체공학과)
  • Received : 2024.08.23
  • Accepted : 2024.08.29
  • Published : 2024.09.30
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Abstract

In a semiconductor system, the operation of sensors plays a crucial role in recognizing information, serving as the starting point for processing external information. This study evaluates the applicability of semiconductor systems by analyzing the operational characteristics of ultraviolet (UV) detection devices using gallium oxide. Gallium oxide exhibits a property where its resistance changes in response to UV light, making it feasible to implement detection devices utilizing this material. However, to determine its applicability in semiconductor systems, detailed studies on its operational characteristics are necessary. In this study, by varying the size of the electrodes, we assessed whether the formation of current paths in gallium oxide in response to UV light is localized. Additionally, we confirmed the response speed to UV light, comparable to commercially available products, through electrical measurements. Through this, we verified the commercial applicability of gallium oxide and its potential integration into various semiconductor systems.

반도체 시스템에서 센서의 동작은 정보의 인식을 담당하여 외부 정보를 처리하는 시스템의 시작점이라 할 수 있다. 본 연구에서는 갈륨 산화물을 이용한 자외선 검출 소자의 동작 특성에 대한 분석을 바탕으로 반도체 시스템에 활용 가능여부를 평가하였다. 갈륨 산화물은 자외선에 반응하여 저항값이 변화되는 특성을 가지고 있기 때문에 이를 활용한 검출 소자 구현이 가능하다. 하지만 반도체 시스템에 적용 가능여부를 판단하기 위해서는 동작 특성에 대한 세부 연구결과가 필요하다. 본 연구에서는 전극의 크기를 변화하여 갈륨 산화물이 자외선에 반응하여 전류가 흐르는 이동 통로를 만드는 것이 국부적인지를 판단하였으며, 상용화된 제품 수준의 자외선에 대한 반응 속도를 전기적 측정을 통하여 확인하였다. 이를 통해 갈륨 산화물의 상업적 응용 가능성을 확인하고 다양한 반도체 시스템에 통합될 수 있는 가능성을 확인하였다.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. RS-2023-00239657). The interconnect samples were fabricated using Sputtering System (SRN-110), S-FAB at Seoul National University of Science and Technology. The EDA tool was supported by the IC Design Education Center(IDEC), Korea.

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