Nuclear Engineering and Technology

  • 제56권6호
  • /
  • Pages.2395-2403
  • /
  • 2024
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  • 1738-5733(pISSN)
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  • 2234-358X(eISSN)
한국원자력학회 (Korean Nuclear Society)
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Analysis and design of voltage doubling rectifier circuit for power supply of neutron source device towards BNCT

  • Rixin Wang (School of Electrical Engineering and Automation, Anhui University) ;
  • Lizhen Liang (Institute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences) ;
  • Congguo Gong (Institute of Energy, Hefei Comprehensive National Science Center) ;
  • Longyang Wang (School of Electrical Engineering and Automation, Anhui University) ;
  • Jun Tao (School of Electrical Engineering and Automation, Anhui University)
  • 투고 : 2023.10.09
  • 심사 : 2024.01.30
  • 발행 : 2024.06.25
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초록

With the rapid development of DC high voltage accelerator, higher requirements have been raised for the design of DC high voltage power supply, requiring more stable high voltage with lower output ripple. Therefore, it also puts forward higher requirements for the parameter design of the voltage doubling rectifier circuit, which is the core component of the DC high voltage power supply. In order to obtain output voltage with better performance, the effects of the working frequency, the stage capacitance and the load resistance on the output voltage of the voltage doubling rectifier circuit are studied in detail by simulation. It can be concluded that the higher the working frequency of the transformer, the larger the stage capacitance, the larger the load resistance and the better the output voltage performance in a certain range. Based on this, a 2.5 MV voltage doubling rectifier circuit driven by a 120 kHz frequency transformer is designed, developed and tested for the power supply of the neutron source device towards BNCT. Experimental results show that this voltage doubling rectifier circuit can satisfy the design requirements, laying a certain foundation for the engineering design of DC high voltage power supply of neutron source device.

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과제정보

This work was supported by the Institute of Energy, Hefei Comprehensive National Science Center under Grant Nos. 21KZS202 and 21KZS208.

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