반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

CFD를 이용한 Double Layer 슬롯 다이 헤드의 메니스커스 형성 연구

Study of Meniscus Formation in a Double Layer Slot Die Head Using CFD

  • 김기은 (한국기술교육대학교 전기.전자.통신공학부) ;
  • 박종운 (한국기술교육대학교 전기.전자.통신공학부)
  • Gieun Kim (School of Electrical, Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Jongwoon Park (School of Electrical, Electronic & Communication Engineering, Korea University of Technology and Education)
  • 투고 : 2024.05.28
  • 심사 : 2024.06.21
  • 발행 : 2024.06.30
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초록

Using a computational fluid dynamics(CFD) simulation tool, we have provided a coating guideline for slot-die coating with a double layer slot die head. We have analyzed the fluid dynamics in terms of the coating speed, flow rate ratio, and viscosity ratio, which are critical for the stability of coating meniscus. We have identified the common coating defects such as break-up, air entrainment, and leakage by varying the coating speeds. The flow rate ratio is the critical parameter determining the wet film thickness of the top and bottom layers. It is shown that when the flow rate ratio exceeds or equals 1.8, air entrainment occurs due to insufficient hydraulic pressure in the bottom layer, even though the total flow rate remains constant. Furthermore, we have found that the flow of the bottom layer is significantly affected by the viscosity of top layer. The viscosity ratio of 4 or higher obstructs the flow of the bottom layer due to the increased hydraulic resistance, resulting in leakage. Finally, we have demonstrated that as the viscosity ratio increases from 0.1 to 10, the maximum coating speed rises from 0.4 mm/s to 1.6 mm/s, and the minimum wet film thickness decreases from 800 ㎛ to 200 ㎛.

키워드

과제정보

This research was supported by "Regional Innovation Strategy (RIS)" through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (MOE) (2021RIS-004).

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