Acknowledgement
This paper was supported by 2023 Baekseok University Research Fund
References
- H.S.Lee, "High Efficiency Life Prediction and Exception Processing Method of NAND Flash Memory-based Storage using Gradient Descent Method," Journal of Convergence for Information Technology, Vol.11, No.11, pp.44-50, 2021 https://doi.org/10.22156/CS4SMB.2021.11.11.044
- H.S.Lee, "A Safety IO Throttling Method Inducting Differential End of Life to Improving the Reliability of Big Data Maintenance in the SSD based RAID," Journal of Digital Convergence, Vol.20, No.5, pp.593-598, 2022. https://doi.org/10.14400/JDC.2022.20.5.593
- H.S.Lee, "Performance analysis and prediction through various over-provision on NAND flash memory based storage," Journal of Digital Convergence, Vol.20, No.3, pp.343-348, 2022. https://doi.org/10.14400/JDC.2022.20.3.343
- H.S.Lee, "A Memory Mapping Technique to Reduce Data Retrieval Cost in the Storage Consisting of Multi Memories," Journal of Internet of Things and Convergence, Vol.9, No.1, pp.19-24, 2023. https://doi.org/10.20465/KIOTS.2023.9.1.019
- H.S.Lee, "A Study on Characteristics and Techniques that Affect Data Integrity for Digital Forensic on Flash Memory-Based Storage Devices," Journal of Internet of Things and Convergence, Vol.9, No.3, pp.7-12, 2023. https://doi.org/10.20465/KIOTS.2023.9.3.007
- H.S.Lee, "An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory," Journal of Internet of Things and Convergence, Vol.9, No.3, pp.81-86, 2023. https://doi.org/10.20465/KIOTS.2023.9.3.081
- H.S.Lee, "An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory," Journal of Internet of Things and Convergence, Vol.9, No.3, pp.81-86, 2023. https://doi.org/10.20465/KIOTS.2023.9.3.081
- https://news.kbs.co.kr/news/view.do?ncd=5517938, Korean Broadcasting System NEWS, 2022.
- Samsung Electronics, "For Data Centers, S.M.A.R.T, Self-Monitoring, Analysis and Reporting Technology," Application Note, 2014.
- Y.Wang, J.Tan, R.Mao and T.Li, "Temperature-Aware Persistent Data Management for LSM-Tree on 3-D NAND Flash Memory," IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol.39, No.12, pp.4611-4622, 2020. https://doi.org/10.1109/TCAD.2020.2982623
- M.R.Amini, H.Wang, X.Gong, D.L.McPherson, I.Kolmanovsky and J.Sun, "Cabin and battery thermal management of connected and automated HEVs for improved energy efficiency using hierarchical model predictive control," IEEE Transactions on Control Systems Technology, Vol.28, No.5, pp.1711-1726, 2019.
- J.Coutet, F.Marc, F.Dozolme, R.Guetard, A.Janvresse, P.Lebosse, A.Pastre and J.C.Clement, "Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories," Microelectronics Reliability, Vol.88, pp.61-66, 2018. https://doi.org/10.1016/j.microrel.2018.06.088
- B.Govoreanu, J.V.Houdt, "On the roll-off of the activation energy plot in high tempreature flash memory retention tests and its impact on the reliability assessment," IEEE Electron Device Lett, Vol29, No.2, pp.177-179, 2008. https://doi.org/10.1109/LED.2007.914089
- B.D.Salvo, G.Ghibaudo, G.Pananakakis, G.Reimbold, F.Mondond, B.Guillaumot and P.Candelier, "Experimental and theoretical investigation of nonvolatile memory dataretention", IEEE Trans. Electron Devices, Vol46, No.7, pp.1518-1524, 1999. https://doi.org/10.1109/16.772505
- K. Lee, M. Kang, Y. Hwang, H. Shin, Accurate lifetime estimation of sub-20-nm NAND flash memory, IEEE Trans. Electron Devices, Vol.63, No.2, pp659-667, 2016. https://doi.org/10.1109/TED.2015.2509004