Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Comparison of Electrical Properties of β-Gallium Oxide (β-Ga2O3) Power SBDs with Guard Ring Structures

Guard Ring 구조에 따른 β-산화갈륨(β-Ga2O3) 전력 SBDs의 전기적 특성 비교

  • Hoon-Ki Lee (Quantum Sensors Research Group, Electronics and Telecommunications Research Institute) ;
  • Kyujun Cho (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Woojin Chang (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Jae-Kyoung Mun (Quantum Sensors Research Group, Electronics and Telecommunications Research Institute)
  • 이훈기 (한국전자통신연구원 양자센서연구그룹) ;
  • 조규준 (한국전자통신연구원 RF/전력부품연구그룹) ;
  • 장우진 (한국전자통신연구원 RF/전력부품연구그룹) ;
  • 문재경 (한국전자통신연구원 양자센서연구그룹)
  • Received : 2023.12.12
  • Accepted : 2024.01.04
  • Published : 2024.03.01
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Abstract

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga2O3) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al2O3 passivation layer (film guard ring: FGR) and the other is with vias formed in the Al2O3 passivation layer to allow the metal to contact the Ga2O3 surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm2 and 29 mΩ·cm2. The series resistance (Rs) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al2O3 was widely deposited on the Ga2O3 surface, which prevent leakage current on the Ga2O3 surface.

Keywords

Acknowledgement

본 연구는 산업통상자원부(산업부)의 전략적핵심소재기술사업(과제번호: 10080736)과 교육부 산하 한국연구재단(NRF)의 지원(과제번호: NRF-2020M3H4A3081798)에 의하여 수행된 결과임을 밝혀 둡니다.

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