Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Structural, Morphological and Electrical Properties of TiO2 Thin Films Deposited by ALD Method

  • Seung-Yeon Oh (Department of Electronic Engineering, Myongji University) ;
  • Jae-Min Shin (Department of Electronic Engineering, Myongji University) ;
  • Gyeong-Hun Na (Department of Electronic Engineering, Myongji University) ;
  • Min-Seok Kwon (Department of Electronic Engineering, Myongji University) ;
  • Sang-Jeen Hong (Department of Semiconductor Engineering, Myongji University) ;
  • Bumsuk Jung (Department of Semiconductor Engineering, Myongji University)
  • Received : 2023.06.04
  • Accepted : 2023.06.21
  • Published : 2023.06.30
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Abstract

TiO2 thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO2 thin films grown by the ALD deposition method were studied. The grown TiO2 thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO2 thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO2 as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

Keywords

Acknowledgement

This research was conducted as part of the 2023 Department-Industry Cooperative Semiconductor Major Track Program, supported by the Korea Institute for Advancement of technology (Project No. G02P18800005501). We would like to express our gratitude to Professor Tae Min Ha from the Semiconductor Process Diagnosis Research Center at Myongji University for his mentoring and valuable assistance throughout the research process.

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