Acknowledgement
This work was supported by the Technology Innovation Program Development of 1.2 kV low-loss Gallium Oxide transistor (RS-2022-00144027) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea), the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No.2021R1F1A1057620), and the present research has been conducted by the Excellent researcher support project of Kwangwoon University in 2022.
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